2SB999 Todos los transistores

 9.1. Size:216K  inchange semiconductor
 2sb996.pdf

isc Silicon PNP Power Transistor 2SB996 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD1356 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Recommended for 20 25W high-fidelity audio frequency amplifier output stage. ABSOL

 9.2. Size:216K  inchange semiconductor
 2sb992.pdf

isc Silicon PNP Power Transistor 2SB992 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Collector Power Dissipation- P = 40W@ T = 25 C C Low Collector Saturation Voltage- V = -0.5V(Max)@ I = -4A CE(sat) C Complement to Type 2SD1362 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High curre

 9.3. Size:216K  inchange semiconductor
 2sb993.pdf

isc Silicon PNP Power Transistor 2SB993 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Collector Power Dissipation- P = 40W@ T = 25 C C Low Collector Saturation Voltage- V = -0.4V(Max)@ I = -4A CE(sat) C Complement to Type 2SD1363 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High curre

 9.4. Size:186K  inchange semiconductor
 2sb991.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB991 DESCRIPTION Collector-Emitter BreakdownVoltage- V = -180V(Min.) (BR)CEO Low Collector Saturation Voltage- V = -1.0(Max.) @I = -0.5A CE(sat) C Wide area of safe operation Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Adudio frequen

 9.5. Size:216K  inchange semiconductor
 2sb994.pdf

isc Silicon PNP Power Transistor 2SB994 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Collector Power Dissipation- P = 30W@ T = 25 C C Low Collector Saturation Voltage- V = -1.0V(Max)@ I = -3A CE(sat) C Complement to Type 2SD1354 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed f

 9.6. Size:218K  inchange semiconductor
 2sb995.pdf

isc Silicon PNP Power Transistor 2SB995 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO Low Collector Saturation Voltage- V = -2.0V(Max)@ I = -4A CE(sat) C Complement to Type 2SD1355 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Recommended for 30W high-fidelity a