2SB999 Todos los transistores

 

2SB999 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB999
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 7 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 6000
   Paquete / Cubierta: TO126
 

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2SB999 Datasheet (PDF)

 9.1. Size:216K  inchange semiconductor
 2sb996.pdf pdf_icon

2SB999

isc Silicon PNP Power Transistor 2SB996DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD1356Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Recommended for 20~25W high-fidelity audio frequencyamplifier output stage.ABSOL

 9.2. Size:216K  inchange semiconductor
 2sb992.pdf pdf_icon

2SB999

isc Silicon PNP Power Transistor 2SB992DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOCollector Power Dissipation-: P = 40W@ T = 25C CLow Collector Saturation Voltage-: V = -0.5V(Max)@ I = -4ACE(sat) CComplement to Type 2SD1362Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh curre

 9.3. Size:216K  inchange semiconductor
 2sb993.pdf pdf_icon

2SB999

isc Silicon PNP Power Transistor 2SB993DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOCollector Power Dissipation-: P = 40W@ T = 25C CLow Collector Saturation Voltage-: V = -0.4V(Max)@ I = -4ACE(sat) CComplement to Type 2SD1363Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh curre

 9.4. Size:186K  inchange semiconductor
 2sb991.pdf pdf_icon

2SB999

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB991DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -180V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.0(Max.) @I = -0.5ACE(sat) CWide area of safe operationGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAdudio frequen

MOSTRAR MÁS

Otros transistores... 2SB991 , 2SB992 , 2SB993 , 2SB994 , 2SB995 , 2SB996 , 2SB997 , 2SB998 , A1266 , 2SC100 , 2SC1000 , 2SC1000GTM , 2SC1001 , 2SC1002 , 2SC1003 , 2SC1003A , 2SC1004 .

History: 2SA193

 

 
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