2SB999 Datasheet. Specs and Replacement

Type Designator: 2SB999

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 6000

Noise Figure, dB: -

Package: TO126

 2SB999 Substitution

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2SB999 datasheet

 9.1. Size:216K  inchange semiconductor

 2sb996.pdf pdf_icon

2SB999

isc Silicon PNP Power Transistor 2SB996 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD1356 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Recommended for 20 25W high-fidelity audio frequency amplifier output stage. ABSOL... See More ⇒

 9.2. Size:216K  inchange semiconductor

 2sb992.pdf pdf_icon

2SB999

isc Silicon PNP Power Transistor 2SB992 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Collector Power Dissipation- P = 40W@ T = 25 C C Low Collector Saturation Voltage- V = -0.5V(Max)@ I = -4A CE(sat) C Complement to Type 2SD1362 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High curre... See More ⇒

 9.3. Size:216K  inchange semiconductor

 2sb993.pdf pdf_icon

2SB999

isc Silicon PNP Power Transistor 2SB993 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Collector Power Dissipation- P = 40W@ T = 25 C C Low Collector Saturation Voltage- V = -0.4V(Max)@ I = -4A CE(sat) C Complement to Type 2SD1363 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High curre... See More ⇒

 9.4. Size:186K  inchange semiconductor

 2sb991.pdf pdf_icon

2SB999

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB991 DESCRIPTION Collector-Emitter BreakdownVoltage- V = -180V(Min.) (BR)CEO Low Collector Saturation Voltage- V = -1.0(Max.) @I = -0.5A CE(sat) C Wide area of safe operation Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Adudio frequen... See More ⇒

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Detailed specifications: 2SB991, 2SB992, 2SB993, 2SB994, 2SB995, 2SB996, 2SB997, 2SB998, TIP142, 2SC100, 2SC1000, 2SC1000GTM, 2SC1001, 2SC1002, 2SC1003, 2SC1003A, 2SC1004

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