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2SC1162 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SA715 Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 5V Collector current IC 2.5 A Collector peak current

2SC1162 2.5A , 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-126 Low frequency power amplifier Emitter Collector Base CLASSIFICATION OF hFE (1) Product-Rank 2SC1162-B 2SC1162-C 2SC1162-D A B E Range 60 120 100 200 160 320 F C N H L M K D J G

NPN TRIPLE DIFFUSED 2SC1172 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SC1162 TRANSISTOR (NPN) TO-126 FEATURES 1. EMITTER Low Frequency Power Amplifier 2. COLLECOTR 3. BASE Equivalent Circuit C1162=Device code Solid dot = Green molding compound device, if none, the normal device C1162 XX XX=Code ORDERING INFORMATION Part Number Package

JMnic Product Specification Silicon NPN Power Transistors 2SC1195 DESCRIPTION With TO-3 package High power dissipation Low collector saturation voltage APPLICATIONS For line operated audio output amplifier and switching power supply drivers applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Ab

JMnic Product Specification Silicon NPN Power Transistors 2SC1172 DESCRIPTION With TO-3 package High breakdown voltage High speed switching APPLICATIONS For use in color TV horizontal output applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 ) SYMBOL PARAME

JMnic Product Specification Silicon NPN Power Transistors 2SC1106 DESCRIPTION With TO-3 package High power dissipation High breakdown voltage APPLICATIONS For voltage regulator ,inverter and switching mode power supply applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings

JMnic Product Specification Silicon NPN Power Transistors 2SC1162 DESCRIPTION With TO-126 package Complement to type 2SA715 APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base

JMnic Product Specification Silicon NPN Power Transistors 2SC1170 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALU

JMnic Product Specification Silicon NPN Power Transistors 2SC1173 DESCRIPTION With TO-220 package Complement to type 2SA473 Collector current IC=3A Collector dissipation PC=10W@TC=25 APPLICATIONS Low frequency power amplifier Power regulator PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (T

JMnic Product Specification Silicon NPN Power Transistors 2SC1116 DESCRIPTION With TO-3 package Wide area of safe operation APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO

Transistors 2SC1187

2SC1162(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECOTR 3. BASE 3 2 1 Features 2.500 7.400 Low frequency power amplifier 2.900 1.100 7.800 1.500 3.900 3.000 4.100 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.200 10.600 Symbol Parameter Value Units 0.000 11.000 0.300 VCBO Collector-Emitter Voltage 35 V VCEO Collector-Emitter Voltage 35 V 2.100

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1195 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1108 DESCRIPTION Low Collector Saturation Voltage High Current 4A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1172 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1115 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1111 DESCRIPTION With TO-3 Package Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1106 DESCRIPTION With TO-3 Package High power dissipation High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For voltage regulators,switching mode power supply applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1112 DESCRIPTION With TO-3 Package Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

isc Silicon NPN Power Transistor 2SC1162 DESCRIPTION High Collector Current I = 2.5A C Collector-Emitter Breakdown Voltage- V = 35V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage Complement to Type 2SA715 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier a

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1185 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1170 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1170A DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMET

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1114 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1140 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1161 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for low frequency high voltage power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1173 DESCRIPTION Low Collector Saturation Voltage Complement to Type 2SA473 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Car radio,car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1157 DESCRIPTION With TO-202 package High transition frequency Complement to type 2SA647 APPLICATIONS For power amplifier switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=25

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1113 DESCRIPTION High Current Capacity Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1141 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1116 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1102 DESCRIPTION With TO-66 package High Voltage High transistor frequency Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in color TV video output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1163 DESCRIPTION High Collector Current I = 0.1A C Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for low frequency power amplifier appl