2SC112 PDF and Equivalents Search

 

2SC112 Specs and Replacement

Type Designator: 2SC112

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.75 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Collector Capacitance (Cc): 14 pF

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: TO5

 2SC112 Substitution

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2SC112 datasheet

 0.1. Size:191K  no

2sc1122a.pdf pdf_icon

2SC112

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 9.1. Size:63K  toshiba

2sc1169.pdf pdf_icon

2SC112

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 9.2. Size:93K  toshiba

2sc1173.pdf pdf_icon

2SC112

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 9.3. Size:29K  hitachi

2sc1162.pdf pdf_icon

2SC112

2SC1162 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SA715 Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 5V Collector current IC 2.5 A Collector peak current... See More ⇒

Detailed specifications: 2SC1114 , 2SC1115 , 2SC1116 , 2SC1116A , 2SC1117 , 2SC1117H , 2SC1118 , 2SC1119 , TIP42 , 2SC1120 , 2SC1121 , 2SC1122 , 2SC1122A , 2SC1123 , 2SC1124 , 2SC1124-1 , 2SC1124-3 .

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