2SC1325 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1325DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor large screen color deflection circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collecto

Transistor2SC1359Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA8385.0 0.2 4.0 0.2FeaturesOptimum for RF amplification of FM/AM radios.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 30 V1.27 1.27Collector t

Transistor2SC1318ASilicon NPN epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SA720A5.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45 0.1Collec

Transistor2SC1383, 2SC1384Silicon NPN epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SA683 and 2SA6845.9 0.2 4.9 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Complementary pair with 2SA683 and 2SA684.0.7 0.1Absolute Maximum Ratings (Ta=25C)2.54 0.15Parameter Symbol Ratings Unit

Transistor2SC1317, 2SC1318Silicon NPN epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SA719 and 2SA7205.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Complementary pair with 2SA719 and 2SA720.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to 2SC1317 30

Transistor2SC1360, 2SC1360ASilicon NPN epitaxial planer typeFor intermadiate frequency amplification of TV imageUnit: mm5.9 0.2 4.9 0.2FeaturesHigh transition frequency fT.Large collector power dissipation PC.0.7 0.1Absolute Maximum Ratings (Ta=25C)2.54 0.15Parameter Symbol Ratings UnitCollector to 2SC1360 50VCBO Vbase voltage 2SC1360A 60Collector to 2S

Transistor2SC1359Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA8385.0 0.2 4.0 0.2FeaturesOptimum for RF amplification of FM/AM radios.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 30 V1.27 1.27Collector t

Transistor2SC1360, 2SC1360ASilicon NPN epitaxial planer typeFor intermadiate frequency amplification of TV imageUnit: mm5.9 0.2 4.9 0.2FeaturesHigh transition frequency fT.Large collector power dissipation PC.0.7 0.1Absolute Maximum Ratings (Ta=25C)2.54 0.15Parameter Symbol Ratings UnitCollector to 2SC1360 50VCBO Vbase voltage 2SC1360A 60Collector to 2S

Transistors2SC1317, 2SC1318Silicon NPN epitaxial planer typeUnit: mmFor low-frequency power amplification and driver amplification 5.00.2 4.00.2Complementary to 2SA719 and 2SA720 Features0.70.1 Low collector to emitter saturation voltage VCE(sat) Complementary pair with 2SA719 and 2SA720 Absolute Maximum Ratings Ta = 25CParameter Symbol Rating Unit 0.45+0.15

Transistor2SC1383, 2SC1384Silicon NPN epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SA683 and 2SA6845.9 0.2 4.9 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Complementary pair with 2SA683 and 2SA684.0.7 0.1Absolute Maximum Ratings (Ta=25C)2.54 0.15Parameter Symbol Ratings Unit

UNISONIC TECHNOLOGIES CO., LTD 2SC1384 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC1384 is power amplifier and driver. FEATURES * Low VCE(SAT) * 2~3W output in complementary pair with 2SA684 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen-Free 1 2 3- 2SC1384G-x-AB3-R SOT-89 B C E Tape Reel2SC138

2SC1342Silicon NPN Epitaxial PlanarApplication VHF amplifier, mixer Local oscollatorOutlineTO-92 (2)1. Emitter2. Collector3. Base3212SC1342Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 4VCollector current IC 30 mACollector power diss

2SC1344, 2SC1345Silicon NPN EpitaxialApplicationLow frequency low noise amplifierOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC1344, 2SC1345Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC1344 2SC1345 UnitCollector to base voltage VCBO 30 55 VCollector to emitter voltage VCEO 30 50 VEmitter to base voltage VEBO 55VCollector current IC 100 100 mACo

2SC1345(K)Silicon NPN EpitaxialApplicationLow frequency low noise amplifierOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC1345 (K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissipation PC 2

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2SC1383L / 2SC1384L NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92L FEATURE G H Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA683 and 2SA684. 1Emitter 111J2Collector 222 3Base 333A DCLASSIFICATION OF hFE(1) Mil

2SC1318A 0.5 A, 80 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Collector output capacitance Cob=11 pF (TYP), 20 pF (MAX) G HEmitter Collector Base JCLASSIFICATION OF hFE(1) A DProduct-Rank 2SC1318A-Q 2SC1318A-R 2SC1318A-S MillimeterREF

2SC1318 0.5 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low Collector to Emitter Saturation Voltage VCE(sat) Millimeter Complementary Pair with 2SA720 REF.Min. Max.A 4.40 4.70B 4.30 4.70C 12.70 -D 3.30 3.81E 0.36 0.56F 0.36 0.51CLASSIFICAT

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors2SC1383 TRANSISTOR (NPN)2SC1384 TO-92L FEATURES Low Collector to Emitter Saturation Voltage VCE(sat).1.EMITTER Complementary Pair with 2SA0683 and 2SA0684.2.COLLECTOR 3.BASE C1383=Device code C1383Solid dot = Green molding compound device, Equivalent Circuit if none,

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsTO 92 2SC1318 TRANSISTOR (NPN)1. EMITTERFEATURES Low Collector to Emitter Saturation Voltage VCE(sat)2. COLLECTOR Complementary Pair with 2SA7203. BASE Equivalent Circuit C1318=Device code C1318 Solid dot=Green molding compound device, XXX if none,the normal device

Transistors2SC1393

Transistors2SC1394

2SC1383/2SC1384 TO-92MOD Transistor (NPN)1.EMITTER TO-92MOD2.COLLECTOR 1 23.BASE 3 Features5.800 Low collector to emitter saturation voltage VCE(sat). 6.200 Complementary pair with 2SA0683 and 2SA0684. 8.4008.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.9001.100Symbol Parameter 2SC1383 2SC1384 Units0.4000.600VCBO Collector-Base Voltage 30

2SC1383/2SC1384 TO-92L Transistor (NPN)TO-92L1.EMITTER 2.COLLECTOR 3.BASE 4.700 2 3 5.1001Features Low collector to emitter saturation voltage VCE(sat). 7.8008.200 Complementary pair with 2SA0683 and 2SA0684. 0.6000.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter 2SC1383 2SC1384 Units0.350VCBO Collector-Base Voltage 30 60 V 0.550

2SC1318(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Collector output capacitance : Cob=11 pF (TYP),20 pF (MAX) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 80 VVCEO Collector-Emitter Voltage 70 VVEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA Di

2SC1383/2SC1384231231. EMITTER12. COLLECTOR3. BASETO-92MODValue252SC1383VCEO502SC13842SC1383 302SC1384 605.01.0Peak Collector Current AdcIcp(DC) 1.51.018.01252SC1383=2SC1383, 2SC1384=2SC1384252SC13832.0502SC13842SC138330102SC13846010u0.1201WEITRONhttp://www.weitron.com.tw2SC1383/2SC1384ELECTRICAL CHAR

2SC1383 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features , 2SA683 Low VCE(sat),complementary pair with 2SA683. / Applications Audio frequency power amplifier and driver.

ST 2SC1383 / 2SC1384 NPN Silicon Epitaxial Planar Transistor For low-frequency power amplification and driver Amplification. Complementary to 2SA683 to and 2SA684. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base TO-92 Plastic PackageAbsolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCo

GST2SC1383 Series NPN General Purpose Transistors Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 25V (2SC1383) amplifier and switch. 50V (2SC1384) Collector Current : 1.0A Lead(Pb)-FreePackages & Pin Assignments TO-92MOD Pin Description1 Emitter 2 Collector 3 Base Marking Information P/N Package Rank Part Ma

2SC1360(3DA1360) 2SC1360A(3DA1360A) NPN /SILICON NPN TRANSISTOR : Purpose: Picture IF amplifier . :, Features: High f , large P . T C/Absolute maximum ratings(Ta=25) Symbol Rating Unit 2SC1360 50 VCBO V 2SC1360A 60 2SC1360

2SC1383(3DA1383) NPN /SILICON NPN TRANSISTOR :/Purpose: Audio frequency power amplifier and driver. :, 2SA683(3CA683)/Features: Low V ,complementary pair CE(sat)with 2SA683(3CA683). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30

2SC1384(3DA1384) NPN /SILICON NPN TRANSISTOR : Purpose: AF power amplifier and driver applications. :, 2SA684(3CA684) 23 Features: Low V ,23W output in complementary pair with 2SA684(3CA684). CE(sat)/Absolute maximum ratings(Ta=25)

TIGER ELECTRONIC CO.,LTD TO-92L Plastic-Encapsulate Transistors 2SC1383 TRANSISTOR (NPN) TO-92L 2SC1384 FEATURES 1.EMITTER Low collector to emitter saturation voltage VCE(sat). 2.COLLECTOR Complementary pair with 2SA0683 and 2SA0684. 3.BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter 2SC1383 2SC1384 UnitsVCBO Collector-Base Voltage 30 60 V

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1309DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor TV horizontal deflection output applicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1398 2SC1398A DESCRIPTION With TO-220 package 2SC1398 is complement to type 2SA748 Large collector power dissipation APPLICATIONS For medium power amplifier applicattions PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbo

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1343DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor large screen color deflection circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collecto

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1391DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in lined-operated color TV chroma outputcircuits and sound output circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1358DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor large screen color deflection circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collecto

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1367DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1308DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor TV horizontal deflection output applicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1368DESCRIPTIONHigh Collector Current I = 1.5ACCollector-Emitter Breakdown Voltage-: V = 25V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.AB

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1316DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in lined-operated color TV chroma outputcircuits and sound output circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

INCHANGE Semiconductorisc Silicon NPN Transistor 2SC1383DESCRIPTIONLow Collector Saturation VoltageComplement to Type 2SA683100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplification and driveramplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1348DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1398DESCRIPTIONLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsCar radio,car stereo output stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U