2SC1840 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistors 2SC1846 Silicon NPN epitaxial planar type For medium output power amplification Unit mm 8.0+0.5 0.1 3.2 0.2 Complementary to 2SA0885 3.16 0.1 Features Low collector-emitter saturation voltage VCE(sat) Output of 3 W can be obtained by a complementary pair with 2SA0885 TO-126B package which requires no insulation plate for installa- tion t

Power Transistors 2SC1847 Silicon NPN epitaxial planar type For medium output power amplification Unit mm 8.0+0.5 0.1 3.2 0.2 Complementary to 2SA0886 3.16 0.1 Features Output of 4 W can be obtained by a complementary pair with 2SA0886 TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute Maximum Ratings Ta = 25

JMnic Product Specification Silicon NPN Power Transistors 2SC1846 DESCRIPTION With TO-126 package Complement to type 2SA885 Low collector saturation APPLICATIONS For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V

JMnic Product Specification Silicon NPN Power Transistors 2SC1847 DESCRIPTION With TO-126 package Complement to type 2SA886 Low collector saturation APPLICATIONS For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V

Transistors 2SC184

2SC1846(3DA1846) NPN /SILICON NPN TRANSISTOR Purpose Medium power amplifier. V , 2SA885(3CA885) 3W CE(sat) Features Low V ,3W output in complementary pair with 2SA885(3CA885). CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 45 V

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1848 DESCRIPTION Silicon NPN epitaxial planar High voltage Complement to Type 2SA887 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 70 V CB

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1846 DESCRIPTION Silicon NPN epitaxial planar type Low collector to emitter saturation voltage Output of 3W can be obtained by a complementary with 2SA0885 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suited for medium output power amplifier

isc Silicon NPN Power Transistor 2SC1847 DESCRIPTION High Collector Current-I = 1.5A C Low Saturation Voltage V = 1V(Max)@ I = 2.0A, I = 0.2A CE(sat) C B Good Linearity of h FE Complement to Type 2SA0886 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suited for the output stage of 3 watts audio amplifier, voltage regul