2SC1840 Datasheet. Specs and Replacement
Type Designator: 2SC1840 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 400
Noise Figure, dB: -
Package: TO92
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2SC1840 datasheet
8.6. Size:93K panasonic
2sc1846.pdf 
Power Transistors 2SC1846 Silicon NPN epitaxial planar type For medium output power amplification Unit mm 8.0+0.5 0.1 3.2 0.2 Complementary to 2SA0885 3.16 0.1 Features Low collector-emitter saturation voltage VCE(sat) Output of 3 W can be obtained by a complementary pair with 2SA0885 TO-126B package which requires no insulation plate for installa- tion t... See More ⇒
8.7. Size:94K panasonic
2sc1847.pdf
Power Transistors 2SC1847 Silicon NPN epitaxial planar type For medium output power amplification Unit mm 8.0+0.5 0.1 3.2 0.2 Complementary to 2SA0886 3.16 0.1 Features Output of 4 W can be obtained by a complementary pair with 2SA0886 TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute Maximum Ratings Ta = 25 ... See More ⇒
8.10. Size:180K jmnic
2sc1846.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC1846 DESCRIPTION With TO-126 package Complement to type 2SA885 Low collector saturation APPLICATIONS For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V... See More ⇒
8.11. Size:178K jmnic
2sc1847.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC1847 DESCRIPTION With TO-126 package Complement to type 2SA886 Low collector saturation APPLICATIONS For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V... See More ⇒
8.13. Size:853K foshan
2sc1846 3da1846.pdf
2SC1846(3DA1846) NPN /SILICON NPN TRANSISTOR Purpose Medium power amplifier. V , 2SA885(3CA885) 3W CE(sat) Features Low V ,3W output in complementary pair with 2SA885(3CA885). CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 45 V ... See More ⇒
8.14. Size:163K inchange semiconductor
2sc1848.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1848 DESCRIPTION Silicon NPN epitaxial planar High voltage Complement to Type 2SA887 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 70 V CB... See More ⇒
8.15. Size:189K inchange semiconductor
2sc1846.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1846 DESCRIPTION Silicon NPN epitaxial planar type Low collector to emitter saturation voltage Output of 3W can be obtained by a complementary with 2SA0885 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suited for medium output power amplifier ... See More ⇒
8.16. Size:192K inchange semiconductor
2sc1847.pdf
isc Silicon NPN Power Transistor 2SC1847 DESCRIPTION High Collector Current-I = 1.5A C Low Saturation Voltage V = 1V(Max)@ I = 2.0A, I = 0.2A CE(sat) C B Good Linearity of h FE Complement to Type 2SA0886 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suited for the output stage of 3 watts audio amplifier, voltage regul... See More ⇒
Detailed specifications: 2SC1835, 2SC1836, 2SC1837, 2SC1837F, 2SC1838, 2SC1838F, 2SC183A, 2SC184, 8050, 2SC1841, 2SC1842, 2SC1843, 2SC1844, 2SC1845, 2SC1846, 2SC1847, 2SC1848
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