2SC2347 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2347
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 650 MHz
Capacitancia de salida (Cc): 1.5 pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar 2SC2347
2SC2347 Datasheet (PDF)
2sc2347.pdf
2SC2347 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2347 TV UHF Oscillator Applications Unit: mm TV VHF Mixer Applications Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 15 VEmitter-base voltage VEBO 3 VCollector current IC 50 mAEmitter current IE -50 mACollector power
2sc2349.pdf
2SC2349 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2349 TV VHF Oscillator Applications Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 15 VEmitter-base voltage VEBO 3 VCollector current IC 50 mAEmitter current IE -50 mACollector power dissipation PC 250 mWJunct
2sa1011 2sc2344.pdf
Ordering number:ENN544GPNP/NPN Epitaxial Planar Silicon Transistors2SA1011/2SC2344High-Voltage Switching, AF Power Amp,100W Output Predriver ApplicationsPackage Dimensionsunit:mm2010C[2SA1011/2SC2344]10.24.53.65.11.31.20.80.41 2 31 : Base( ) : 2SA10112 : Collector3 : Emitter2.55 2.55SpecificationsSANYO : TO220ABAbsolute Maximum Ratings at Ta = 2
2sc2344.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2344 DESCRIPTION With TO-220 package Complement to type 2SA1011 APPLICATIONS High voltage switching Audio frequency power amplifier; 100W output predriver applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 EmitterAb
2sc2344 3da2344.pdf
2SC2344(3DA2344) NPN /SILICON NPN TRANSISTOR :100W Purpose: High voltage switching, AF power amplifier, 100W output predriver applications. : 2SA1011(3CA1011) Features: complementary pair with 2SA1011(3CA1011). /Absolute maximum ratings(Ta=25)
2sc2344.pdf
isc Silicon NPN Power Transistor 2SC2344DESCRIPTIONLow Collector Saturation Voltage-: V = 0.3V(Typ.)@ I = 0.5ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 160V(Min.)(BR)CEOComplement to Type 2SA1011Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage switching, audio frequency poweramplif
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Liste
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