2SC2347 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2347
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 650 MHz
Collector Capacitance (Cc): 1.5 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO92
2SC2347 Transistor Equivalent Substitute - Cross-Reference Search
2SC2347 Datasheet (PDF)
2sc2347.pdf
2SC2347 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2347 TV UHF Oscillator Applications Unit: mm TV VHF Mixer Applications Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 15 VEmitter-base voltage VEBO 3 VCollector current IC 50 mAEmitter current IE -50 mACollector power
2sc2349.pdf
2SC2349 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2349 TV VHF Oscillator Applications Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 15 VEmitter-base voltage VEBO 3 VCollector current IC 50 mAEmitter current IE -50 mACollector power dissipation PC 250 mWJunct
2sa1011 2sc2344.pdf
Ordering number:ENN544GPNP/NPN Epitaxial Planar Silicon Transistors2SA1011/2SC2344High-Voltage Switching, AF Power Amp,100W Output Predriver ApplicationsPackage Dimensionsunit:mm2010C[2SA1011/2SC2344]10.24.53.65.11.31.20.80.41 2 31 : Base( ) : 2SA10112 : Collector3 : Emitter2.55 2.55SpecificationsSANYO : TO220ABAbsolute Maximum Ratings at Ta = 2
2sc2344.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2344 DESCRIPTION With TO-220 package Complement to type 2SA1011 APPLICATIONS High voltage switching Audio frequency power amplifier; 100W output predriver applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 EmitterAb
2sc2344 3da2344.pdf
2SC2344(3DA2344) NPN /SILICON NPN TRANSISTOR :100W Purpose: High voltage switching, AF power amplifier, 100W output predriver applications. : 2SA1011(3CA1011) Features: complementary pair with 2SA1011(3CA1011). /Absolute maximum ratings(Ta=25)
2sc2344.pdf
isc Silicon NPN Power Transistor 2SC2344DESCRIPTIONLow Collector Saturation Voltage-: V = 0.3V(Typ.)@ I = 0.5ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 160V(Min.)(BR)CEOComplement to Type 2SA1011Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage switching, audio frequency poweramplif
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: 2SD741 | AD169 | AF102
