2SC2581 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2581
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 200 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10 MHz
Capacitancia de salida (Cc): 250 pF
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: TO218
Búsqueda de reemplazo de transistor bipolar 2SC2581
2SC2581 Datasheet (PDF)
2sc2581.pdf
2SC2581 NPN PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1106ABSOLUTE MAXIMUM RATING (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 140 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 10 A Collecto
2sc2581.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2581 DESCRIPTION With TO-3PN package Complement to type 2SA1106 High power dissipation High current capability APPLICATIONS Audio power amplifier DC-DC converter PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbs
2sc2581.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC2581DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 140V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationComplement to Type 2SA1106APPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
2sc2581.pdf
isc Silicon NPN Power Transistor 2SC2581DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 140V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationComplement to Type 2SA1106Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
2sc2580.pdf
2SC2580 NPN PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1105 ABSOLUTE MAXIMUM RATING (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 120 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 9 A
2sc2585.pdf
2SC2585NPN SILICON RF TRANSISTORPACKAGE STYLEDESCRIPTION:The 2SC2585 is a Common EmitterDevice Designed for Low NioseAmplifier and Medium Power OscillatorApplications up to 8.5 GHz.MAXIMUM RATINGSIC 65 mAVCEO 12 VVCBO 25 VVEB 1.5 VPT 400 mW @ TC = 166 OCTJ -65 OC to +200 OCTSTG -65 OC to +200 OCDIMENSIONS IN MILLIMETERS1 = BASE 3 = COLLECTOR85 OC/WJC 2 &
2sc2582.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2582 DESCRIPTION With TO-126 package Large collector power dissipation High transition frequency APPLICATIONS Audio frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT
2sc2580.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2580 DESCRIPTION With TO-3PN package Complement to type 2SA1105 High power dissipation High current capability APPLICATIONS Audio power amplifier DC-DC converter PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbs
2sc2582.pdf
isc Silicon NPN Power Transistor 2SC2582DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 35V(Min)(BR)CEOGood Linearity of hFEHigh Collector Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
2sc2580.pdf
isc Silicon NPN Power Transistor 2SC2580DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 120V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col
2sc2588.pdf
isc Silicon NPN Power Transistor 2SC2564DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1094Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
