2SC2581 Todos los transistores

 

2SC2581 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC2581
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 200 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 10 MHz
   Capacitancia de salida (Cc): 250 pF
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: TO218

 Búsqueda de reemplazo de transistor bipolar 2SC2581

 

2SC2581 Datasheet (PDF)

 ..1. Size:25K  wingshing
2sc2581.pdf pdf_icon

2SC2581

2SC2581 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1106 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 140 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 10 A Collecto

 ..2. Size:146K  jmnic
2sc2581.pdf pdf_icon

2SC2581

JMnic Product Specification Silicon NPN Power Transistors 2SC2581 DESCRIPTION With TO-3PN package Complement to type 2SA1106 High power dissipation High current capability APPLICATIONS Audio power amplifier DC-DC converter PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Abs

 ..3. Size:171K  cn sptech
2sc2581.pdf pdf_icon

2SC2581

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC2581 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Complement to Type 2SA1106 APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

 ..4. Size:196K  inchange semiconductor
2sc2581.pdf pdf_icon

2SC2581

isc Silicon NPN Power Transistor 2SC2581 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Complement to Type 2SA1106 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

Otros transistores... 2SC2573 , 2SC2575 , 2SC2575L , 2SC2577 , 2SC2578 , 2SC2579 , 2SC258 , 2SC2580 , BD333 , 2SC2582 , 2SC2584 , 2SC2586 , 2SC2587 , 2SC2587A , 2SC2588 , 2SC2588A , 2SC2589 .

 

 
Back to Top

 


 
.