2SC2788 Todos los transistores

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 2sc2788.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2788 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Breakdown Voltage Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulators applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

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 2sc2782.pdf

2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm Output Power Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 36 V Collector-Emitter Voltage VCEO 16 V Emitter-Base Voltage VEBO 4 V Collector Current IC 20 A

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 2sc2783.pdf

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 2sc2785.pdf

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 2sc2780.pdf

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 2sc2784.pdf

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 2sc2786.pdf

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 2sc2787.pdf

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 2sc2785.pdf

2SC2785 TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 3. BASE 1 2 3 Features High voltage VCEO 50V Excellent hFE Linearity 0.92 TYP hFE1 (0.1mA)/ hFE2 (1mA) Complementary to 2SA1175 PNP transistor MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Value Units Parameter VCBO 60 V Collector-Base Voltage VCEO Collector-Emitter Voltage 50 V VEBO

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 2sc2780.pdf

SMD Type Transistors NPN Transistors 2SC2780 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=140V Complementary to 2SA1173 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 140 Collector - Emitter Voltage VCEO