2SC2788 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2788DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown VoltageGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulators applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm Output Power : Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Base Voltage VCBO 36 VCollector-Emitter Voltage VCEO 16 VEmitter-Base Voltage VEBO 4 VCollector Current IC 20 A

2SC2785 TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 3. BASE 1 2 3 Features High voltage VCEO:50V Excellent hFE Linearity:0.92 TYP hFE1 (0.1mA)/ hFE2 (1mA) Complementary to 2SA1175 PNP transistor MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Value UnitsParameter VCBO 60 VCollector-Base Voltage VCEO Collector-Emitter Voltage 50 V VEBO

SMD Type TransistorsNPN Transistors2SC2780SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=140V Complementary to 2SA11730.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 140 Collector - Emitter Voltage VCEO