2SC2788 Specs and Replacement
Type Designator: 2SC2788
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO218
2SC2788 Substitution
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2SC2788 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2788 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Breakdown Voltage Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulators applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S... See More ⇒
2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm Output Power Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 36 V Collector-Emitter Voltage VCEO 16 V Emitter-Base Voltage VEBO 4 V Collector Current IC 20 A ... See More ⇒
Detailed specifications: 2SC2785FF, 2SC2786, 2SC2786MF, 2SC2786LF, 2SC2786KF, 2SC2787MF, 2SC2787LF, 2SC2787KF, TIP41, 2SC2789, 2SC2790, 2SC2790A, 2SC2791, 2SC2792, 2SC2793, 2SC2794, 2SC2796
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