2SC3029 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC3029  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.05 W

Tensión colector-base (Vcb): 15 V

Corriente del colector DC máxima (Ic): 0.005 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 2000 MHz

Ganancia de corriente contínua (hFE): 80

Encapsulados: TO128

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2SC3029 datasheet

 8.1. Size:37K  hitachi
2sc3025 2sc3026.pdf pdf_icon

2SC3029

 8.2. Size:189K  inchange semiconductor
2sc3026.pdf pdf_icon

2SC3029

isc Silicon NPN Power Transistor 2SC3026 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage power switching character display horizontal deflection output applic

 8.3. Size:188K  inchange semiconductor
2sc3025.pdf pdf_icon

2SC3029

isc Silicon NPN Power Transistor 2SC3025 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage power switching character display horizontal deflection output applic

Otros transistores... 2SC3021, 2SC3022, 2SC3023, 2SC3024, 2SC3025, 2SC3026, 2SC3027, 2SC3028, 2N2222A, 2SC302M, 2SC303, 2SC3030, 2SC3031, 2SC3032, 2SC3033, 2SC3034, 2SC3035