2SC3029
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3029
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.05
W
Maximum Collector-Base Voltage |Vcb|: 15
V
Maximum Collector Current |Ic max|: 0.005
A
Max. Operating Junction Temperature (Tj): 175
°C
Transition Frequency (ft): 2000
MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package:
TO128
2SC3029
Datasheet (PDF)
8.2. Size:189K inchange semiconductor
2sc3026.pdf
isc Silicon NPN Power Transistor 2SC3026DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage power switching character displayhorizontal deflection output applic
8.3. Size:188K inchange semiconductor
2sc3025.pdf
isc Silicon NPN Power Transistor 2SC3025DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage power switching character displayhorizontal deflection output applic
Datasheet: 2N3200
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