2SC3579 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3579
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 800 V
Tensión colector-emisor (Vce): 800 V
Corriente del colector DC máxima (Ic): 6 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO220
Búsqueda de reemplazo de 2SC3579
2SC3579 Datasheet (PDF)
2sc3576.pdf

Ordering number:EN1799DNPN Epitaxial Planar Silicon Transistor2SC3576High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions LF general-purpose amplifiers, various drivers,unit:mmmuting circuit.2033[2SC3576]Features Adoption of FBET process. High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation vo
2sc3570.pdf

DATA SHEETSILICON POWER TRANSISTOR2SC3570NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-VOLTAGE HIGH-SPEED SWITCHINGThe 2SC3570 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)voltage high-speed switching, and is ideal for use in drivers such asswitching regulators, DC/DC converters, and high-frequency poweramplifiers.FEATURES Mold package that do
Otros transistores... 2SC3571 , 2SC3572 , 2SC3573 , 2SC3574 , 2SC3575 , 2SC3576 , 2SC3577 , 2SC3578 , TIP3055 , 2SC3580 , 2SC3581 , 2SC3582 , 2SC3583 , 2SC3584 , 2SC3585 , 2SC3586 , 2SC3587 .



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