All Transistors. 2SC3579 Datasheet

 

2SC3579 Datasheet and Replacement


   Type Designator: 2SC3579
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 800 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO220
 

 2SC3579 Substitution

   - BJT ⓘ Cross-Reference Search

   

2SC3579 Datasheet (PDF)

 8.1. Size:108K  sanyo
2sc3576.pdf pdf_icon

2SC3579

Ordering number:EN1799DNPN Epitaxial Planar Silicon Transistor2SC3576High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions LF general-purpose amplifiers, various drivers,unit:mmmuting circuit.2033[2SC3576]Features Adoption of FBET process. High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation vo

 8.2. Size:136K  nec
2sc3570.pdf pdf_icon

2SC3579

DATA SHEETSILICON POWER TRANSISTOR2SC3570NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-VOLTAGE HIGH-SPEED SWITCHINGThe 2SC3570 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)voltage high-speed switching, and is ideal for use in drivers such asswitching regulators, DC/DC converters, and high-frequency poweramplifiers.FEATURES Mold package that do

 8.3. Size:180K  nec
2sc3571.pdf pdf_icon

2SC3579

 8.4. Size:187K  nec
2sc3572.pdf pdf_icon

2SC3579

Datasheet: 2SC3571 , 2SC3572 , 2SC3573 , 2SC3574 , 2SC3575 , 2SC3576 , 2SC3577 , 2SC3578 , TIP3055 , 2SC3580 , 2SC3581 , 2SC3582 , 2SC3583 , 2SC3584 , 2SC3585 , 2SC3586 , 2SC3587 .

Keywords - 2SC3579 transistor datasheet

 2SC3579 cross reference
 2SC3579 equivalent finder
 2SC3579 lookup
 2SC3579 substitution
 2SC3579 replacement

 

 
Back to Top

 


 
.