2SC3669
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3669
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 2
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Capacitancia de salida (Cc): 30
pF
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta:
TOSH2
Búsqueda de reemplazo de transistor bipolar 2SC3669
2SC3669
Datasheet (PDF)
..2. Size:270K utc
2sc3669.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage VCE(SAT)=0.5V (Max.) * High speed switching time: TSTG=1.0s (Typ.) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC3669L-x-AA3-R 2SC3669G-x-AA3-R SOT
8.4. Size:33K sanyo
2sc3664.pdf
Ordering number:EN2488NPN Triple Diffused Planar Type Darlington Silicon Transistor2SC3664400V/20A Driver ApplicationsApplications Package Dimensions Induction cookers.unit:mm High-voltage, high power switching.2022A[2SC3664]Features Fast speed (adoption of MBIT process). High breakdown voltage (VCBO=800V). High reliability (adoption of HVP process).
8.5. Size:87K sanyo
2sc3661.pdf
Ordering number:EN1854ANPN Epitaxial Planar Silicon Transistor2SC3661High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Low frequency general-purpose amplifiers, drivers,unit:mmmuting circuit.2018A[2SC3661]Features Very small-sized package permitting 2SC3661-usedsets to be made smaller, slimmer. Adoption of FBET proc
8.6. Size:110K nec
2sc3663.pdf
DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3663NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATIONFEATURESPACKAGE DIMENSIONS (in mm) Low-voltage, low-current, low-noise and high-gain2.8 0.2NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 A, f = 1.0 GHz+0.11.5 0.650.15GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 A, f = 1.0 GHz Ideal for battery driv
8.7. Size:1389K kexin
2sc3663.pdf
SMD Type TransistorsNPN Transistors2SC3663SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features Collector Current Capability IC=5mA1 2 Collector Emitter Voltage VCEO=8V+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto
8.8. Size:947K kexin
2sc3661.pdf
SMD Type TransistorsNPN Transistors2SC3661SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=300mA1 2 Collector Emitter Voltage VCEO=25V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collec
Otros transistores... 2SC3666O
, 2SC3666Y
, 2SC3667
, 2SC3667O
, 2SC3667Y
, 2SC3668
, 2SC3668O
, 2SC3668Y
, 2SC2383Y
, 2SC3669O
, 2SC3669Y
, 2SC366G
, 2SC366GO
, 2SC366GR
, 2SC366GY
, 2SC367
, 2SC3670
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