All Transistors. 2SC3669 Datasheet

 

2SC3669 Datasheet and Replacement


   Type Designator: 2SC3669
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TOSH2
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2SC3669 Datasheet (PDF)

 ..1. Size:192K  toshiba
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2SC3669

 ..2. Size:270K  utc
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2SC3669

UNISONIC TECHNOLOGIES CO., LTD 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage VCE(SAT)=0.5V (Max.) * High speed switching time: TSTG=1.0s (Typ.) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC3669L-x-AA3-R 2SC3669G-x-AA3-R SOT

 8.1. Size:175K  toshiba
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2SC3669

 8.2. Size:217K  toshiba
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2SC3669

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2SC3671 | 2SC1572 | C9012A-F | PBSS4032PZ | ZTX541M | MP930R | 16563

Keywords - 2SC3669 transistor datasheet

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