2SC3669 Specs and Replacement
Type Designator: 2SC3669
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TOSH2
- BJT ⓘ Cross-Reference Search
2SC3669 datasheet
..2. Size:270K utc
2sc3669.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage VCE(SAT)=0.5V (Max.) * High speed switching time TSTG=1.0 s (Typ.) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC3669L-x-AA3-R 2SC3669G-x-AA3-R SOT... See More ⇒
8.5. Size:87K sanyo
2sc3661.pdf
Ordering number EN1854A NPN Epitaxial Planar Silicon Transistor 2SC3661 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low frequency general-purpose amplifiers, drivers, unit mm muting circuit. 2018A [2SC3661] Features Very small-sized package permitting 2SC3661-used sets to be made smaller, slimmer. Adoption of FBET proc... See More ⇒
8.6. Size:110K nec
2sc3663.pdf
DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3663 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURES PACKAGE DIMENSIONS (in mm) Low-voltage, low-current, low-noise and high-gain 2.8 0.2 NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 A, f = 1.0 GHz +0.1 1.5 0.65 0.15 GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 A, f = 1.0 GHz Ideal for battery driv... See More ⇒
8.7. Size:1389K kexin
2sc3663.pdf
SMD Type Transistors NPN Transistors 2SC3663 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=5mA 1 2 Collector Emitter Voltage VCEO=8V +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto... See More ⇒
8.8. Size:947K kexin
2sc3661.pdf
SMD Type Transistors NPN Transistors 2SC3661 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=300mA 1 2 Collector Emitter Voltage VCEO=25V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collec... See More ⇒
Detailed specifications: 2SC3666O, 2SC3666Y, 2SC3667, 2SC3667O, 2SC3667Y, 2SC3668, 2SC3668O, 2SC3668Y, C3198, 2SC3669O, 2SC3669Y, 2SC366G, 2SC366GO, 2SC366GR, 2SC366GY, 2SC367, 2SC3670
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