2SC373G Todos los transistores

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 2sc3733.pdf

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 2sc3735.pdf

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 2sc3736.pdf

DATA SHEET SILICON TRANSISTOR 2SC3736 HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SC3736 is designed for power amplifier and high speed 4.5 0.1 switching applications. 1.6 0.2 1.5 0.1 FEATURES High speed, high voltage switching Low collector saturation voltage 2 Complementary to the

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 2sc3731.pdf

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 2sc3734.pdf

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 2sc3739.pdf

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 2sc3732.pdf

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 2sc3735.pdf

SMD Type Transistors NPN Transistors 2SC3735 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=200mA Collector Emitter Voltage VCEO=15V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collec

 8.9. Size:1341K  kexin
 2sc3736.pdf

SMD Type Transistors NPN Transistors 2SC3736 1.70 0.1 Features High Speed,High Voltage Switching Low Collector Saturation Voltage Complementary to 2SA1463 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 45 V Emitter - Base V

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 2sc3734.pdf

SMD Type Transistors NPN Transistors 2SC3734 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High Speed tstg

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 2sc3739.pdf

SMD Type Transistors NPN Transistors 2SC3739 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features High Gain Bandwidth Product fT=200MHz(min) Complementary to 2SA1464 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector

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 2sc3738.pdf

isc Silicon NPN Power Transistor 2SC3738 DESCRIPTION High Voltage, High Speed Switching Wide Area of Safe Operation Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

 8.13. Size:195K  inchange semiconductor
 2sc3737.pdf

isc Silicon NPN Power Transistor 2SC3737 DESCRIPTION High Collector-Base Breakdown Voltage- V = 800V(Min) (BR)CBO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25