2SC373G Specs and Replacement
Type Designator: 2SC373G
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO92
- BJT ⓘ Cross-Reference Search
2SC373G datasheet
8.3. Size:161K nec
2sc3736.pdf 
DATA SHEET SILICON TRANSISTOR 2SC3736 HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SC3736 is designed for power amplifier and high speed 4.5 0.1 switching applications. 1.6 0.2 1.5 0.1 FEATURES High speed, high voltage switching Low collector saturation voltage 2 Complementary to the ... See More ⇒
8.8. Size:1125K kexin
2sc3735.pdf
SMD Type Transistors NPN Transistors 2SC3735 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=200mA Collector Emitter Voltage VCEO=15V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collec... See More ⇒
8.9. Size:1341K kexin
2sc3736.pdf
SMD Type Transistors NPN Transistors 2SC3736 1.70 0.1 Features High Speed,High Voltage Switching Low Collector Saturation Voltage Complementary to 2SA1463 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 45 V Emitter - Base V... See More ⇒
8.10. Size:1621K kexin
2sc3734.pdf
SMD Type Transistors NPN Transistors 2SC3734 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High Speed tstg ... See More ⇒
8.11. Size:2345K kexin
2sc3739.pdf
SMD Type Transistors NPN Transistors 2SC3739 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features High Gain Bandwidth Product fT=200MHz(min) Complementary to 2SA1464 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector ... See More ⇒
8.12. Size:197K inchange semiconductor
2sc3738.pdf
isc Silicon NPN Power Transistor 2SC3738 DESCRIPTION High Voltage, High Speed Switching Wide Area of Safe Operation Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU... See More ⇒
8.13. Size:195K inchange semiconductor
2sc3737.pdf
isc Silicon NPN Power Transistor 2SC3737 DESCRIPTION High Collector-Base Breakdown Voltage- V = 800V(Min) (BR)CBO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ... See More ⇒
Detailed specifications: 2SC3732, 2SC3733, 2SC3734, 2SC3735, 2SC3736, 2SC3737, 2SC3738, 2SC3739, 2N2907, 2SC374, 2SC3740, 2SC3741, 2SC3742, 2SC3743, 2SC3744, 2SC3745, 2SC3746
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