2SC3895 Todos los transistores

 

2SC3895 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC3895
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 60 W
   Tensión colector-base (Vcb): 1500 V
   Tensión colector-emisor (Vce): 800 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 8 MHz
   Capacitancia de salida (Cc): 150 pF
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TOP3
 
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2SC3895 Datasheet (PDF)

 ..1. Size:84K  sanyo
2sc3895.pdf pdf_icon

2SC3895

Ordering number:EN2966BNPN Triple Diffused Planar Silicon Transistor2SC3895Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SC3895] Adoption of MBIT process.1 : Base2 : Collector3 :

 ..2. Size:178K  inchange semiconductor
2sc3895.pdf pdf_icon

2SC3895

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3895DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25

 8.1. Size:96K  sanyo
2sc3896.pdf pdf_icon

2SC3895

Ordering number:EN4097NPN Triple Diffused Planar Silicon Transistor2SC3896Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (Adoption of HVP process).2039D High breakdown voltage (VCBO=1500V).[2SC3896] Adoption of MBIT process.1 : Base2 : Collector3 : E

 8.2. Size:93K  sanyo
2sc3897.pdf pdf_icon

2SC3895

Ordering number:EN4098NPN Triple Diffused Planar Silicon Transistor2SC3897Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (Adoption of HVP process).2039D High breakdown voltage (VCBO=1500V).[2SC3897] Adoption of MBIT process.1 : Base2 : Collector3 : E

Otros transistores... 2SC3891 , 2SC3891A , 2SC3892 , 2SC3892A , 2SC3893 , 2SC3893A , 2SC3894 , 2SC3894A , 2SD313 , 2SC3895A , 2SC3896 , 2SC3896A , 2SC3897 , 2SC3897A , 2SC3898 , 2SC3899 , 2SC39 .

History: GF105

 

 
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