2SC3895 Datasheet. Specs and Replacement
Type Designator: 2SC3895 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 8 MHz
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TOP3
- BJT ⓘ Cross-Reference Search
2SC3895 datasheet
..1. Size:84K sanyo
2sc3895.pdf 
Ordering number EN2966B NPN Triple Diffused Planar Silicon Transistor 2SC3895 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC3895] Adoption of MBIT process. 1 Base 2 Collector 3 ... See More ⇒
8.1. Size:96K sanyo
2sc3896.pdf
Ordering number EN4097 NPN Triple Diffused Planar Silicon Transistor 2SC3896 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (Adoption of HVP process). 2039D High breakdown voltage (VCBO=1500V). [2SC3896] Adoption of MBIT process. 1 Base 2 Collector 3 E... See More ⇒
8.2. Size:93K sanyo
2sc3897.pdf
Ordering number EN4098 NPN Triple Diffused Planar Silicon Transistor 2SC3897 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (Adoption of HVP process). 2039D High breakdown voltage (VCBO=1500V). [2SC3897] Adoption of MBIT process. 1 Base 2 Collector 3 E... See More ⇒
8.4. Size:84K sanyo
2sc3894.pdf
Ordering number EN2965B NPN Triple Diffused Planar Silicon Transistor 2SC3894 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC3894] Adoption of MBIT process. 1 Base 2 Collector 3 ... See More ⇒
8.5. Size:25K sanken-ele
2sc3890.pdf
2SC3890 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC3890 Unit Symbol Conditions 2SC3890 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 500 V VCB=500V 100max A ICBO... See More ⇒
8.8. Size:95K inchange semiconductor
2sc3892a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3892A DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed APPLICATIONS Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) ... See More ⇒
8.9. Size:215K inchange semiconductor
2sc3894.pdf
isc Silicon NPN Power Transistor 2SC3894 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒
8.10. Size:206K inchange semiconductor
2sc3890.pdf
isc Silicon NPN Power Transistor 2SC3890 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Low Collector Saturation Voltage- V = 0.5V(Max)@ I = 3A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUT... See More ⇒
8.11. Size:214K inchange semiconductor
2sc3893a.pdf
isc Silicon NPN Power Transistor 2SC3893A DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒
8.12. Size:214K inchange semiconductor
2sc3892.pdf
isc Silicon NPN Power Transistor 2SC3892 DESCRIPTION High Breakdown Voltage- V = 1400V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER ... See More ⇒
8.13. Size:214K inchange semiconductor
2sc3893.pdf
isc Silicon NPN Power Transistor 2SC3893 DESCRIPTION High Breakdown Voltage- V = 1400V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER ... See More ⇒
Detailed specifications: 2SC3891, 2SC3891A, 2SC3892, 2SC3892A, 2SC3893, 2SC3893A, 2SC3894, 2SC3894A, A1013, 2SC3895A, 2SC3896, 2SC3896A, 2SC3897, 2SC3897A, 2SC3898, 2SC3899, 2SC39
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