Биполярный транзистор 2SC3895 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC3895
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 60 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 7 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 8 MHz
Ёмкость коллекторного перехода (Cc): 150 pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: TOP3
2SC3895 Datasheet (PDF)
2sc3895.pdf
Ordering number:EN2966BNPN Triple Diffused Planar Silicon Transistor2SC3895Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SC3895] Adoption of MBIT process.1 : Base2 : Collector3 :
2sc3895.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3895DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25
2sc3896.pdf
Ordering number:EN4097NPN Triple Diffused Planar Silicon Transistor2SC3896Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (Adoption of HVP process).2039D High breakdown voltage (VCBO=1500V).[2SC3896] Adoption of MBIT process.1 : Base2 : Collector3 : E
2sc3897.pdf
Ordering number:EN4098NPN Triple Diffused Planar Silicon Transistor2SC3897Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (Adoption of HVP process).2039D High breakdown voltage (VCBO=1500V).[2SC3897] Adoption of MBIT process.1 : Base2 : Collector3 : E
2sc3894.pdf
Ordering number:EN2965BNPN Triple Diffused Planar Silicon Transistor2SC3894Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SC3894] Adoption of MBIT process.1 : Base2 : Collector3 :
2sc3890.pdf
2SC3890Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC3890 Unit Symbol Conditions 2SC3890 Unit0.24.20.210.1c0.52.8VCBO 500 V VCB=500V 100max AICBO
2sc3896.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3896DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25
2sc3897.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3897DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25
2sc3892a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3892A DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed APPLICATIONS Horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol 3 EmitterAbsolute maximum ratings (Ta=25)
2sc3894.pdf
isc Silicon NPN Power Transistor 2SC3894DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
2sc3890.pdf
isc Silicon NPN Power Transistor 2SC3890DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 0.5V(Max)@ I = 3ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUT
2sc3893a.pdf
isc Silicon NPN Power Transistor 2SC3893ADESCRIPTIONHigh Breakdown Voltage-V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
2sc3892.pdf
isc Silicon NPN Power Transistor 2SC3892DESCRIPTIONHigh Breakdown Voltage-V = 1400V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
2sc3893.pdf
isc Silicon NPN Power Transistor 2SC3893DESCRIPTIONHigh Breakdown Voltage-V = 1400V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
