2SC40 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC40 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 25 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 165 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 300 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hFE): 50
Encapsulados: TO18
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2SC40 datasheet
2sc4096.pdf
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2sa1575 2sc4080.pdf
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2sc4031.pdf
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2sc4030.pdf
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2sc4003.pdf
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2sc4006.pdf
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2sc4002.pdf
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2sc4027.pdf
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2sc4075.pdf
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2sc4095.pdf
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2sc4093.pdf
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2sc4092.pdf
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2sc4083.pdf
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2sc4098.pdf
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2sc4097-q.pdf
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2sc4097-p.pdf
MCC 2SC4097-P TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components 2SC4097-Q CA 91311 Phone (818) 701-4933 2SC4097-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) High Icmax. Icmax=0.5A NPN Silicon Low VCE(SAT). Optimal for low voltage operation.
2sc4097-r.pdf
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2sc4081-b.pdf
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2sc4097.pdf
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2sc4081-a.pdf
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2sc4081.pdf
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2sc4081-c.pdf
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2SC4050 Silicon NPN Epitaxial Application Low frequency amplifier, switching Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4050 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipation PC 150 mW Ju
2sc4046.pdf
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2sc4097.pdf
2SC4097 0.5A , 32V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES High ICMax. ICMax=0.5A. Low VCE(sat). Optimal for low voltage operation. A L Complementary to 2SA1577 3 3 Top View C B 1 1 2 2 K E MECHANICAL DATA D Terminals Solderable per MIL-STD-202,
2sc4081f.pdf
2SC4081F 0.15A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES Low Cob. Cob=2.0pF (Typ.) Excellent hFE linearity A L Complementary to 2SA1576A 3 3 Top View C B 1 1 2 2 K E CLASSIFICATION OF hFE D H J Product-Rank 2SC4081F-Q 2SC4081F-R 2SC4081F-S F G
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2sc4026.pdf
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JMnic Product Specification Silicon NPN Power Transistors 2SC4057 DESCRIPTION With TO-247 package High voltage;high speed Switching power transistor PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collecto
2sc4055.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4055 DESCRIPTION With TO-220C package High voltage,High speed switching High reliability PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V V
2sc4052.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4052 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-
2sc4029.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4029 DESCRIPTION With TO-3PL package Complement to type 2SA1553 APPLICATIONS Power amplifier applications Recommended for 120W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3
2sc4060.pdf
Product Specification Silicon NPN Power Transistor 2SC4060 DESCRIPTION High Collector-Emitter Sustaining Voltage- VCEO(SUS)= 450V(Min) High Switching Speed High Reliability APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Colle
2sc4058.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4058 DESCRIPTION With TO-247 package High voltage;high speed Switching power transistor PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collecto
2sc4004.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4004 DESCRIPTION With TO-220Fa package Satisfactory linearity of foward current transfer ratio hFE Wide area of safe operation (ASO) High-speed switching High collector to base voltage VCBO APPLICATIONS For high breakdown voltage high-speed switching PINNING PIN DESCRIPTION 1 Base 2 Collec
2sc4020.pdf
2SC4020 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-25(TO220) Symbol 2SC4020 Symbol Conditions 2SC4020 Unit Unit 0.2 4.8 0.2 10.2 0.1 2.0 VCBO 900 ICBO VCB=800V 100max A V VCEO 800 IEB
2sc4064.pdf
LOW VCE (sat) 2SC4064 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1567) Application DC Motor Driver and General Purpose External Dimensions FM20(TO220F) (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics Symbol 2SC4064 Unit Symbol Conditions 2SC4064 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 50 V ICBO VCB=50V 100max A VCEO 50 V IEBO VEB
2sc4065.pdf
C Equivalent circuit B Built-in Diode at C E Low VCE (sat) 2SC4065 (400 ) E Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1568) Application DC Motor Driver and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Symbol 2SC4065 Unit Conditions 2SC4065 Unit 0.2 4.2 0.2 10.
2sc4073.pdf
2SC4073 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4073 Unit Symbol Conditions 2SC4073 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 500 V VCB=500V 100max A ICBO
2sc4024.pdf
High hFE LOW VCE (sat) 2SC4024 Silicon NPN Epitaxial Planar Transistor Application DC-DC Converter, Emergency Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol Conditions 2SC4024 Symbol 2SC4024 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 ICBO VCB=100V 10max VCBO 100 V A IEBO VE
2sc4097.pdf
2SC4097 TRANSISTOR (NPN) SOT-323 3 FEATURES High ICMax. ICMax=0.5A 1 Low VCE(sat).Optimal for low voltage operation. 2 Complements the 2SA1577 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collec
2sc4081.pdf
2SC4081 TRANSISTOR (NPN) SOT-323 FEATURES Excellent hFE linearity Complements the 2A1576A 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipat
2sc4098.pdf
2 SC4098 TRANSISTOR (NPN) FEATURES SOT 323 Low Collector Capacitance High Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO 1. BASE V Collector-Emitter Voltage 25 V 2. EMITTER CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO I Collector Current 50 mA C P Collector Power Dissipation 200 m
2sc4097 sot-323.pdf
2SC4097 SOT-323 Transistor(NPN) 1. BASE SOT-323 2. EMITTER 3. COLLECTOR Features High ICMax. ICMax=0.5A Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1577 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V Dimensions in inches and (millimeters) VEBO
2sc4081 sot-323.pdf
2SC4081 SOT-323 Transistor(NPN) 1. BASE SOT-323 2. EMITTER 3. COLLECTOR Features Excellent hFE linearity Complements the 2A1576A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current
2sc4003.pdf
2SC4003(NPN) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High hFE hFE=60 to 200 low VCE(sat) VCE(sat)=0.6V MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continu
2sc4081.pdf
2SC4081 General Purpose Transistor COLLECTOR 3 3 NPN Silicon P b Lead(Pb)-Free 1 1 2 BASE 2 FEATURES SOT-323(SC-70) EMITTER Excellent hFE linearity Complements the 2A1576A MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO V 50 7 V Emitter-Base Voltage VEBO Collector Current -C
2sc4083.pdf
2SC4083 NPN Silicon Transistor 3 P b Lead(Pb)-Free 1 2 1. BASE FEATURES 2. EMITTER 3. COLLECTOR * Radio frequency amplifier * High transition frequency SOT-323(SC-70) * High gain with low collector-to base time constant * Low noise (NF) * Marking 1D ( T =25 C unless otherwise noted) Maximum Ratings A Rating Symbol Value Unit VCBO Collector-Base Voltage 20 V VCEO Collecto
2sc4081xt1.pdf
FM120-M WILLAS THRU 2SC4081xT1 SOT-323 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers TRANSISTOR (NPN) better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted appli
2sc4081w.pdf
2SC4081W(BR3DG4081W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 NPN Silicon NPN transistor in a SOT-323 Plastic Package. / Features Low Cob. / Applications General amplifier. / Equivalent Circuit / Pinning 3 2 1 PIN1 Emit
st2sc4073u.pdf
ST 2SC4073U NPN Silicon Epitaxial Planar Transistor General purpose amplifier and high voltage application Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 120 V Collector Emitter Voltage VCEO 120 V Emitter Base Voltage VEBO 6 V Collector Current IC 1 A Peak Collector Current (Single pulse, tp = 300 s) ICP 2 A 0.5 Ptot W T
l2sc4081qt1g l2sc4081rt1g l2sc4081st1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
l2sc4083pt1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier L2SC4083NT1G Transistor Series We declare that the material of product compliance with RoHS requirements. S-L2SC4083NT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering Information Device Marking Shipping L2SC4083NT1G 3000
l2sc4083nwt1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083NWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083NWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083NWT1G
l2sc4081qt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
l2sc4081qt1g l2sc4081qt3g l2sc4081rt1g l2sc4081rt3g l2sc4081st1g l2sc4081st3g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
l2sc4083pwt1g l2sc4083pwt1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083PWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083PWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083PWT1G
l2sc4081st1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
l2sc4083qwt1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083QWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083QWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083QWT1G
l2sc4081rt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
l2sc4083pwt1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083PWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083PWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083PWT1G
2sc4050.pdf
SMD Type Transistors NPN Transistors 2SC4050 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=100mA 1 2 Collector Emitter Voltage VCEO=120V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Co
2sc4080.pdf
SMD Type Transistors NPN Transistors 2SC4080 1.70 0.1 Features High fT. High breakdown voltage. Complementary to 2SA1575 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 200 Collector - Emitter Voltage VCEO 200 V Emitter - Base Voltage VEBO 4 Collector Curren
2sc4097.pdf
SMD Type Transistors NPN Transistors 2SC4097 Features High ICMax.ICMax. = 0.5A Low VCE(sat). Complementary to 2SA1577 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 32 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 0.5 A
2sc4081.pdf
SMD Type Transistors NPN Transistors 2SC4081 Features Low Cob. Cob=2.0pF (Typ.) Complementary to 2SA1576A 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 7 Collector Current - Continuous IC 150 mA Collector Power D
2sc4097gp.pdf
CHENMKO ENTERPRISE CO.,LTD 2SC4097GP SURFACE MOUNT Medium Power NPN Transistor VOLTAGE 32 Volts CURRENT 0.5 Ampere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. (SC-70/SOT-323) SC-70/SOT-323 * Low saturation voltage V * Low cob. Cob=6.0pF(Typ.) CE(sat)=0.4V(max.)(IC=500mA) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability
2sc4083pwt1g.pdf
2SC4083PWT1G o Absolute maximum ratings (Ta=25 C) Symbol Limits Unit Parameter 3 COLLECTOR Collector-base voltage VCBO 20 V VCEO 11 V Collector-emitter voltage 1 Emitter-base voltage VEBO 3 V BASE Collector current IC 50 mA Collector power dissipation PC 0.15 W 2 o Junction temperature EMITTER T 150 C j o Storage temperature Tstg - 55 +150 C Ordering Information D
2sc4064.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC4064 DESCRIPTION Low Collector Saturation Voltage V = 0.35V(Max)@ I =6A CE(sat) C Collector-Emitter Breakdown Voltage- V = 50V (Min) (BR)CEO Complement to Type 2SA1567 APPLICATIONS Designed for use in DC motor driver and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER V
2sc4007.pdf
isc Silicon NPN Power Transistor 2SC4007 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SA1634 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose a
2sc4054.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4054 DESCRIPTION With ITO-220 package Switching power transistor High voltage ,high speed PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltag
2sc4053.pdf
isc Silicon NPN Power Transistors 2SC4053 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU
2sc4026.pdf
isc Silicon NPN Power Transistor 2SC4026 DESCRIPTION Collector-Base Breakdown Voltage- V = 500V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT
2sc4056.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4056 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO C
2sc4057.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4057 DESCRIPTION With TO-247 package High voltage;high speed Switching power transistor PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE U
2sc4020.pdf
isc Silicon NPN Power Transistor 2SC4020 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 0.7A CE(sat) C Collector-Emitter Breakdown Voltage- V = 800V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed switching regulator and general purpose applications. ABSOLUTE
2sc4055.pdf
isc Silicon NPN Power Transistors 2SC4055 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU
2sc4064.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4064 DESCRIPTION Low Collector Saturation Voltage VCE(sat)= 0.35V(Max)@ IC=6A Collector-Emitter Breakdown Voltage- V(BR)CEO= 50V (Min) Complement to Type 2SA1567 APPLICATIONS Designed for use in DC motor driver and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25
2sc4052.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4052 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO C
2sc4029.pdf
isc Silicon NPN Power Transistor 2SC4029 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Complement to Type 2SA1553 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 120W high fidelity audio frequency ampl
2sc4003.pdf
isc Silicon NPN Power Transistor 2SC4003 DESCRIPTION High h FE Low collector-to-emitter saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 400 V CBO V Collector-Emitter
2sc4073.pdf
isc Silicon NPN Power Transistor 2SC4073 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-
2sc4059.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4059 DESCRIPTION With TO-247 package High voltage;high speed Switching power transistor PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE U
2sc4001.pdf
isc Silicon NPN Power Transistor 2SC4001 DESCRIPTION The 2SC4001is designed for uses of high-resolution monitor TV applications.This makes it possible to raise the video band Of high-resolution monitor TVs to 50MHz. Minimum Lot-to-Lot variations for robust device performance and reliable operation FEATURES Collector Emitter Sustaining Voltage- V = 300 V(Min) CBO Complemen
2sc4008.pdf
isc Silicon NPN Power Transistor 2SC4008 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SA1635 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose a
2sc4060.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4060 DESCRIPTION With TO-247 package Switching power transistor High voltage,high speed PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE U
2sc4058.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4058 DESCRIPTION With TO-247 package High voltage;high speed Switching power transistor PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE U
2sc4024.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4024 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS DC-DC converter,Emergency lighting Inverter and general purpose ABSOLUTE MAXIMUM RATINGS(T =25 )
2sc4051.pdf
isc Silicon NPN Power Transistors 2SC4051 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU
2sc4027.pdf
isc Silicon NPN Power Transistor 2SC4027 DESCRIPTION High voltage and large current capacity Ultrahigh-speed switching Small and slim package permitting 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SA1552 APPLICATIONS Converters , inverters and color TV audio output ABSOLUTE MAXIMUM RATINGS(T
2sc4075.pdf
isc Silicon NPN Power Transistor 2SC4075 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV chroma output, sound output and B/W TV video output, audio output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
2sc4004.pdf
isc Silicon NPN Power Transistor 2SC4004 DESCRIPTION Collector-Base Breakdown Voltage- V = 900V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT
Otros transistores... 2SC3993M, 2SC3994, 2SC3995, 2SC3996, 2SC3997, 2SC3998, 2SC3999, 2SC39A, S8050, 2SC400, 2SC4000, 2SC4001, 2SC4002, 2SC4003, 2SC4004, 2SC4005, 2SC4006
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