2SC40 Datasheet. Specs and Replacement
Type Designator: 2SC40 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 165 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO18
2SC40 Substitution
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2SC40 datasheet
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2SC4098 Datasheet Datasheet High frequency amplifier transistor (25V, 50mA, 300MHz) lOutline l SOT-323 Parameter Value SC-70 VCEO 25V IC 50mA UMT3 lFeatures lInner circuit l l 1)Low collector capacitance. (Cob Typ.1.3pF) lApplication l HIGH FREQUENCY AMPLIFIER, FREQUENCY CONVERTER RF AMPLIFIER, LOCAL OSCILLATOR lPackaging specifi... See More ⇒
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MCC 2SC4097-P TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components 2SC4097-Q CA 91311 Phone (818) 701-4933 2SC4097-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) High Icmax. Icmax=0.5A NPN Silicon Low VCE(SAT). Optimal for low voltage operation. ... See More ⇒
MCC 2SC4097-P TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components 2SC4097-Q CA 91311 Phone (818) 701-4933 2SC4097-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) High Icmax. Icmax=0.5A NPN Silicon Low VCE(SAT). Optimal for low voltage operation. ... See More ⇒
MCC 2SC4097-P TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components 2SC4097-Q CA 91311 Phone (818) 701-4933 2SC4097-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) High Icmax. Icmax=0.5A NPN Silicon Low VCE(SAT). Optimal for low voltage operation. ... See More ⇒
2SC4081-A MCC Micro Commercial Components TM 2SC4081-B 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC4081-C Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Silicon RoHS Compliant. See ordering information) Low Cob . Cob=2.0pF(Typ) Epitaxial Transistors Complementary to 2SC157... See More ⇒
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2SC4081-A MCC Micro Commercial Components TM 2SC4081-B 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC4081-C Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Silicon RoHS Compliant. See ordering information) Low Cob . Cob=2.0pF(Typ) Epitaxial Transistors Complementary to 2SC157... See More ⇒
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UNISONIC TECHNOLOGIES CO., LTD 2SC4027 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS 1 FEATURES TO-220 * High voltage and large current capacity. * Fast switching time. 1 TO-252 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC4027L-x-TA3-T 2SC4027G-x-TA3-T TO-220 B C E Tube 2SC4027L-x-TN3-R 2SC4027G-... See More ⇒
2SC4050 Silicon NPN Epitaxial Application Low frequency amplifier, switching Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4050 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipation PC 150 mW Ju... See More ⇒
2SC4046 Silicon NPN Epitaxial Application High voltage amplifier Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5V Collector current IC 0.2 A Collector power dissipation PC*1 8W Junction temperature ... See More ⇒
LOW VCE (sat) 2SC4064 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1567) Application DC Motor Driver and General Purpose External Dimensions FM20(TO220F) (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics Symbol 2SC4064 Unit Symbol Conditions 2SC4064 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 50 V ICBO VCB=50V 100max A VCEO 50 V IEBO VEB... See More ⇒
2SC4097 0.5A , 32V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES High ICMax. ICMax=0.5A. Low VCE(sat). Optimal for low voltage operation. A L Complementary to 2SA1577 3 3 Top View C B 1 1 2 2 K E MECHANICAL DATA D Terminals Solderable per MIL-STD-202, ... See More ⇒
2SC4081F 0.15A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES Low Cob. Cob=2.0pF (Typ.) Excellent hFE linearity A L Complementary to 2SA1576A 3 3 Top View C B 1 1 2 2 K E CLASSIFICATION OF hFE D H J Product-Rank 2SC4081F-Q 2SC4081F-R 2SC4081F-S F G... See More ⇒
2SC4098 0.05A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 Low Collector Capacitance. High Gain. A L 3 3 Top View C B 1 CLASSIFICATION OF hFE 1 2 2 K E Product-Rank 2SC4098-N 2SC4098-P 2SC4098-Q D Range 56 120 82 180 120 270 H J F G Marking... See More ⇒
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JMnic Product Specification Silicon NPN Power Transistors 2SC4057 DESCRIPTION With TO-247 package High voltage;high speed Switching power transistor PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collecto... See More ⇒
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4055 DESCRIPTION With TO-220C package High voltage,High speed switching High reliability PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V V... See More ⇒
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4052 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-... See More ⇒
JMnic Product Specification Silicon NPN Power Transistors 2SC4029 DESCRIPTION With TO-3PL package Complement to type 2SA1553 APPLICATIONS Power amplifier applications Recommended for 120W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3 ... See More ⇒
Product Specification Silicon NPN Power Transistor 2SC4060 DESCRIPTION High Collector-Emitter Sustaining Voltage- VCEO(SUS)= 450V(Min) High Switching Speed High Reliability APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Colle... See More ⇒
JMnic Product Specification Silicon NPN Power Transistors 2SC4058 DESCRIPTION With TO-247 package High voltage;high speed Switching power transistor PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collecto... See More ⇒
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4004 DESCRIPTION With TO-220Fa package Satisfactory linearity of foward current transfer ratio hFE Wide area of safe operation (ASO) High-speed switching High collector to base voltage VCBO APPLICATIONS For high breakdown voltage high-speed switching PINNING PIN DESCRIPTION 1 Base 2 Collec... See More ⇒
2SC4020 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-25(TO220) Symbol 2SC4020 Symbol Conditions 2SC4020 Unit Unit 0.2 4.8 0.2 10.2 0.1 2.0 VCBO 900 ICBO VCB=800V 100max A V VCEO 800 IEB... See More ⇒
LOW VCE (sat) 2SC4064 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1567) Application DC Motor Driver and General Purpose External Dimensions FM20(TO220F) (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics Symbol 2SC4064 Unit Symbol Conditions 2SC4064 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 50 V ICBO VCB=50V 100max A VCEO 50 V IEBO VEB... See More ⇒
C Equivalent circuit B Built-in Diode at C E Low VCE (sat) 2SC4065 (400 ) E Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1568) Application DC Motor Driver and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Symbol 2SC4065 Unit Conditions 2SC4065 Unit 0.2 4.2 0.2 10.... See More ⇒
2SC4073 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4073 Unit Symbol Conditions 2SC4073 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 500 V VCB=500V 100max A ICBO... See More ⇒
High hFE LOW VCE (sat) 2SC4024 Silicon NPN Epitaxial Planar Transistor Application DC-DC Converter, Emergency Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol Conditions 2SC4024 Symbol 2SC4024 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 ICBO VCB=100V 10max VCBO 100 V A IEBO VE... See More ⇒
2SC4097 TRANSISTOR (NPN) SOT-323 3 FEATURES High ICMax. ICMax=0.5A 1 Low VCE(sat).Optimal for low voltage operation. 2 Complements the 2SA1577 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collec... See More ⇒
2SC4081 TRANSISTOR (NPN) SOT-323 FEATURES Excellent hFE linearity Complements the 2A1576A 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipat... See More ⇒
2 SC4098 TRANSISTOR (NPN) FEATURES SOT 323 Low Collector Capacitance High Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO 1. BASE V Collector-Emitter Voltage 25 V 2. EMITTER CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO I Collector Current 50 mA C P Collector Power Dissipation 200 m... See More ⇒
2SC4097 SOT-323 Transistor(NPN) 1. BASE SOT-323 2. EMITTER 3. COLLECTOR Features High ICMax. ICMax=0.5A Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1577 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V Dimensions in inches and (millimeters) VEBO ... See More ⇒
2SC4081 SOT-323 Transistor(NPN) 1. BASE SOT-323 2. EMITTER 3. COLLECTOR Features Excellent hFE linearity Complements the 2A1576A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current... See More ⇒
2SC4003(NPN) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High hFE hFE=60 to 200 low VCE(sat) VCE(sat)=0.6V MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continu... See More ⇒
2SC4081 General Purpose Transistor COLLECTOR 3 3 NPN Silicon P b Lead(Pb)-Free 1 1 2 BASE 2 FEATURES SOT-323(SC-70) EMITTER Excellent hFE linearity Complements the 2A1576A MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO V 50 7 V Emitter-Base Voltage VEBO Collector Current -C... See More ⇒
2SC4083 NPN Silicon Transistor 3 P b Lead(Pb)-Free 1 2 1. BASE FEATURES 2. EMITTER 3. COLLECTOR * Radio frequency amplifier * High transition frequency SOT-323(SC-70) * High gain with low collector-to base time constant * Low noise (NF) * Marking 1D ( T =25 C unless otherwise noted) Maximum Ratings A Rating Symbol Value Unit VCBO Collector-Base Voltage 20 V VCEO Collecto... See More ⇒
FM120-M WILLAS THRU 2SC4081xT1 SOT-323 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers TRANSISTOR (NPN) better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted appli... See More ⇒
2SC4081W(BR3DG4081W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 NPN Silicon NPN transistor in a SOT-323 Plastic Package. / Features Low Cob. / Applications General amplifier. / Equivalent Circuit / Pinning 3 2 1 PIN1 Emit... See More ⇒
ST 2SC4073U NPN Silicon Epitaxial Planar Transistor General purpose amplifier and high voltage application Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 120 V Collector Emitter Voltage VCEO 120 V Emitter Base Voltage VEBO 6 V Collector Current IC 1 A Peak Collector Current (Single pulse, tp = 300 s) ICP 2 A 0.5 Ptot W T... See More ⇒
l2sc4081qt1g l2sc4081rt1g l2sc4081st1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101... See More ⇒
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier L2SC4083NT1G Transistor Series We declare that the material of product compliance with RoHS requirements. S-L2SC4083NT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering Information Device Marking Shipping L2SC4083NT1G 3000... See More ⇒
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083NWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083NWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083NWT1G ... See More ⇒
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101... See More ⇒
l2sc4081qt1g l2sc4081qt3g l2sc4081rt1g l2sc4081rt3g l2sc4081st1g l2sc4081st3g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101... See More ⇒
l2sc4083pwt1g l2sc4083pwt1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083PWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083PWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083PWT1G ... See More ⇒
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101... See More ⇒
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083QWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083QWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083QWT1G ... See More ⇒
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101... See More ⇒
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083PWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083PWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083PWT1G ... See More ⇒
SMD Type Transistors NPN Transistors 2SC4050 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=100mA 1 2 Collector Emitter Voltage VCEO=120V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Co... See More ⇒
SMD Type Transistors NPN Transistors 2SC4080 1.70 0.1 Features High fT. High breakdown voltage. Complementary to 2SA1575 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 200 Collector - Emitter Voltage VCEO 200 V Emitter - Base Voltage VEBO 4 Collector Curren... See More ⇒
SMD Type Transistors NPN Transistors 2SC4097 Features High ICMax.ICMax. = 0.5A Low VCE(sat). Complementary to 2SA1577 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 32 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 0.5 A ... See More ⇒
SMD Type Transistors NPN Transistors 2SC4081 Features Low Cob. Cob=2.0pF (Typ.) Complementary to 2SA1576A 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 7 Collector Current - Continuous IC 150 mA Collector Power D... See More ⇒
CHENMKO ENTERPRISE CO.,LTD 2SC4097GP SURFACE MOUNT Medium Power NPN Transistor VOLTAGE 32 Volts CURRENT 0.5 Ampere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. (SC-70/SOT-323) SC-70/SOT-323 * Low saturation voltage V * Low cob. Cob=6.0pF(Typ.) CE(sat)=0.4V(max.)(IC=500mA) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability... See More ⇒
2SC4083PWT1G o Absolute maximum ratings (Ta=25 C) Symbol Limits Unit Parameter 3 COLLECTOR Collector-base voltage VCBO 20 V VCEO 11 V Collector-emitter voltage 1 Emitter-base voltage VEBO 3 V BASE Collector current IC 50 mA Collector power dissipation PC 0.15 W 2 o Junction temperature EMITTER T 150 C j o Storage temperature Tstg - 55 +150 C Ordering Information D... See More ⇒
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC4064 DESCRIPTION Low Collector Saturation Voltage V = 0.35V(Max)@ I =6A CE(sat) C Collector-Emitter Breakdown Voltage- V = 50V (Min) (BR)CEO Complement to Type 2SA1567 APPLICATIONS Designed for use in DC motor driver and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER V... See More ⇒
isc Silicon NPN Power Transistor 2SC4007 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SA1634 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose a... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4054 DESCRIPTION With ITO-220 package Switching power transistor High voltage ,high speed PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltag... See More ⇒
isc Silicon NPN Power Transistors 2SC4053 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU... See More ⇒
isc Silicon NPN Power Transistor 2SC4026 DESCRIPTION Collector-Base Breakdown Voltage- V = 500V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4056 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO C... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4057 DESCRIPTION With TO-247 package High voltage;high speed Switching power transistor PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE U... See More ⇒
isc Silicon NPN Power Transistor 2SC4020 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 0.7A CE(sat) C Collector-Emitter Breakdown Voltage- V = 800V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed switching regulator and general purpose applications. ABSOLUTE ... See More ⇒
isc Silicon NPN Power Transistors 2SC4055 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4064 DESCRIPTION Low Collector Saturation Voltage VCE(sat)= 0.35V(Max)@ IC=6A Collector-Emitter Breakdown Voltage- V(BR)CEO= 50V (Min) Complement to Type 2SA1567 APPLICATIONS Designed for use in DC motor driver and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4052 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO C... See More ⇒
isc Silicon NPN Power Transistor 2SC4029 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Complement to Type 2SA1553 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 120W high fidelity audio frequency ampl... See More ⇒
isc Silicon NPN Power Transistor 2SC4003 DESCRIPTION High h FE Low collector-to-emitter saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 400 V CBO V Collector-Emitter... See More ⇒
isc Silicon NPN Power Transistor 2SC4073 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4059 DESCRIPTION With TO-247 package High voltage;high speed Switching power transistor PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE U... See More ⇒
isc Silicon NPN Power Transistor 2SC4001 DESCRIPTION The 2SC4001is designed for uses of high-resolution monitor TV applications.This makes it possible to raise the video band Of high-resolution monitor TVs to 50MHz. Minimum Lot-to-Lot variations for robust device performance and reliable operation FEATURES Collector Emitter Sustaining Voltage- V = 300 V(Min) CBO Complemen... See More ⇒
isc Silicon NPN Power Transistor 2SC4008 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SA1635 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose a... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4060 DESCRIPTION With TO-247 package Switching power transistor High voltage,high speed PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE U... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4058 DESCRIPTION With TO-247 package High voltage;high speed Switching power transistor PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE U... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4024 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS DC-DC converter,Emergency lighting Inverter and general purpose ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
isc Silicon NPN Power Transistors 2SC4051 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU... See More ⇒
isc Silicon NPN Power Transistor 2SC4027 DESCRIPTION High voltage and large current capacity Ultrahigh-speed switching Small and slim package permitting 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SA1552 APPLICATIONS Converters , inverters and color TV audio output ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒
isc Silicon NPN Power Transistor 2SC4075 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV chroma output, sound output and B/W TV video output, audio output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒
isc Silicon NPN Power Transistor 2SC4004 DESCRIPTION Collector-Base Breakdown Voltage- V = 900V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒
Detailed specifications: 2SC3993M, 2SC3994, 2SC3995, 2SC3996, 2SC3997, 2SC3998, 2SC3999, 2SC39A, S8050, 2SC400, 2SC4000, 2SC4001, 2SC4002, 2SC4003, 2SC4004, 2SC4005, 2SC4006
Keywords - 2SC40 pdf specs
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