Power Transistors2SC4096Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm 3.3 0.220.0 0.5 5.0 0.33.0FeaturesHigh-speed switchingHigh collector to base voltage VCBOWide area of safe operation (ASO) 1.5Satisfactory linearity of foward current transfer ratio hFE1.52.0 0.32.7 0.33.0 0.3Absolute Maximum R

Ordering number:EN3171PNP/NPN Epitaxial Planar Silicon Transistors2SA1575/2SC4080High-Frequency Amplifier,Wide-Band Amplifier ApplicationsFeatures Package Dimensions High fT.unit:mm High breakdown voltage.2038 Small reverse transfer capacitance and excellent[2SA1575/2SC4080]high-frequency characteristic. Adoption of FBET process.E : EmitterC : Collector

Ordering number:EN2478BNPN Triple Diffused Planar Silicon Transistor2SC4031900V/20mA Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=900V).unit:mm Small Output Capacitance (Cob typ=1.6pF).2049C Wide ASO (adoption of MBIT process).[2SC4031] High reliability (adoption of HVP process).10.24.51.31.20.80.41 2 31 : B

Ordering number : EN2262D2SA1552 / 2SC4027SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon TransistorsHigh-Voltage Switching2SA1552 / 2SC4027ApplicationsApplications Converters, inverters, color TV audio output.Features Adoption of FBET, MBIT processes. High voltage and large current capacity. Ultrahigh-speed switching. Small and slim p

Ordering number:EN2477BNPN Triple Diffused Planar Silicon Transistor2SC4030900V/50mA Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=900V).unit:mm Small Output Capacitance (Cob typ=2.0pF).2049C Wide ASO (adoption of MBIT process).[2SC4030] High reliability (adoption of HVP process).10.24.51.31.20.80.41 2 31 : B

Ordering number:EN2959ANPN Triple Diffused Planar Silicon Transistor2SC4003High-Voltage Driver ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Adoption of MBIT process.2045B Excellent hFE linearity.[2SC4003]1 : Base2 : Collector3 : Emitter4 : CollectorSANYO : TPunit:mm2044B[2SC4003]1 : Base2 : Collector3 : Emitter4 : Co

Ordering number:EN2272ANPN Planar Type Silicon Darlington Transistor2SC4006Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2041A[2SC4006]4.510.0Features2.83.2 High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 50 8

Ordering number:EN2960NPN Triple Diffused Planar Silicon Transistor2SC4002High-Voltage Driver ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Adoption of MBIT process.2003B Excellent hFE linearity.[2SC4002]5.04.04.00.450.50.440.451 : Emitter2 : Collector3 : Base1 2 3SANYO : NPJEDEC : TO-921.3 1.3EIAJ : SC-43Spec

Ordering number:ENN2262BPNP/NPN Epitaxial Planar Silicon Transistors2SA1552/2SC4027High-Voltage Switching ApplicationsApplications Package Dimensions Converters, inverters, color TV audio output. unit:mm2045BFeatures [2SA1552/2SC4027]6.5 Adoption of FBET, MBIT processes.2.35.00.54 High voltage and large current capacity. Fast switching time. Small

Ordering number:EN2532NPN Triple Diffused Planar Silicon Transistor2SC4075Color TV Chroma Outputand Audio Output ApplicationsApplications Package Dimensions Color TV chroma output, sound output and B/W TVunit:mmvideo output, audio output applications.2041A[2SC4075]4.510.0Features2.83.2 Highly resistant to breakdown and wide ASO. Micaless package facili

Ordering number:EN2271ANPN Planar Type Silicon Darlington Transistor2SC4005Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2041A[2SC4005]4.510.0Features2.83.2 High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 50 8

Preliminary Datasheet R07DS0274EJ03002SC4050 (Previous: REJ03G0715-0200)Rev.3.00Silicon NPN Epitaxial Mar 28, 2011Application Low frequency amplifier, switching Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)1. Emitter32. Base3. Collector12Note: Marking is KIE. Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitCollect

NEC's NPN SILICON HIGH NE856FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT:fT = 7 GHz LOW NOISE FIGURE:1.1 dB at 1 GHz HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION35 (MICRO-X)00 (CHIP) LOW COSTDESCRIPTIONNEC's NE856 series of NPN epitaxial silicon transistors isdesigned for low cost amplifier and oscillator application

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC4094MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe 2SC4094 is an NPN epitaxial silicon transistor designed for use in(Units: mm)low-noise and small signal amplifiers from VHF band to UHF band. Low-+0.2noise figure, high gain, and high current capability achieve a ver

NEC's NPN SILICON HIGH NE021FREQUENCY TRANSISTOR SERIESFEATURES HIGH INSERTION GAIN: 18.5 dB at 500 MHz LOW NOISE FIGURE: 1.5 dB at 500 MHz HIGH POWER GAIN: 12 dB at 2 GHz LARGE DYNAMIC RANGE: 19 dBm at 1 dB,2 GHz Gain CompressionDESCRIPTION00 (CHIP) 07/07BNEC's NE021 series of NPN silicon transistors provides eco-nomical solutions to wide ranges of amplifier a

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC4095MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe 2SC4095 is an NPN epitaxial silicon transistor designed for use in(Units: mm)low-noise and small signal amplifiers from VHF band to UHF band.+0.22SC4095 features excellent power gain with very low-noise figures.2.8

NEC's NPN SILICON HIGH NE680FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz LOW NOISE FIGURE:1.7 dB at 2 GHz2.6 dB at 4 GHz HIGH ASSOCIATED GAIN:12.5 dB at 2 GHz8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE00 (CHIP) 35 (MICRO-X)LOW CURRENT PERFORMANCEDESCRIPTIONNEC's NE680 series of NPN epitaxial silicon transistors isdesigned for l

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC4093MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe 2SC4093 is an NPN silicon epitaxial transistor designed for low(Units: mm)noise amplifier at VHF, UHF and CATV band.+0.2It has large dynamic range and good current characteritics, and is2.8 -0.3+0.21.5 -0.1co

NEC's NPN SILICON HIGH NE681FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz LOW NOISE FIGURE:1.2 dB at 1 GHz1.6 dB at 2 GHz HIGH ASSOCIATED GAIN:15 dB at 1 GHz12 dB at 2 GHz LOW COST00 (CHIP) 35 (MICRO-X)DESCRIPTIONNEC's NE681 series of NPN epitaxial silicon transistors aredesigned for low noise, high gain, low cost amplifier a

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC4092HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe 2SC4092 is an NPN silicon epitaxial transistor designed for low-(Units: mm)noise amplifier at VHF, UHF band.+0.2It is contained in 4 pins mini-mold package which enables high-isolation2.8 -0.3+0.21.5 -0.1

2SC4097FRA2SC4097TransistorsAEC-Q101 QualifiedMedium Power Transistor (32V, 0.5A) 2SC40972SC4097FRA Features External dimensions (Units : mm) 1) High ICMax.ICMax. = 0.5A2SC4097FRA2SC40972) Low VCE(sat).Optimal for low voltage operation. 2.00.21.30.1 0.90.13) Complements the 2SA1577. 2SA1577FRA0.65 0.65 0.70.10.2(1) (2)0 ~ 0.1(3) Structure A

High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K Features Dimensions (Unit : mm) 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2SC56591.22) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2(2)(3)(1)(1) Base0.15Max.ROHM : VMT3(2) EmitterAbsolute maximum ratings (Ta=25C) (3) Collector

General purpose small signal amplifier (50V, 0.15A) 2SC4081UB Applications Dimensions (Unit : mm) General purpose small signal amplifier UMT3F2.00.90.32Features 1) Low Cob. (3)Cob=2.0pF (Typ.) 2) Complements the 2SA1576UB. (1) (2) 0.130.65 0.651.3Structure NPN silicon epitaxial planar transistor Each lead has same dimensions(1) Base(2) Emitt

2SC4081U3 HZGDatasheetGeneral purpose small signal amplifier(50V, 150mA)AEC-Q101 QualifiedlOutlinel SOT-323 Parameter Value SC-70 VCEO50VIC150mAUMT3lFeatures lInner circuitl l1)Low Cob.Cob=2.0pF(Typ.)2)Complements the 2SA1576U3 HZG.lApplicationlGENERAL PURPOSE SMALL SIGNAL AMPLIFIERlPackaging specificationslP

2SC4061KDatasheetChroma amplifier transistor (300V,100mA)lOutlinel SOT-346 Parameter Value SC-59 VCEO300VIC100mASMT3lFeatures lInner circuitl l1)High breakdown voltage.(BVCEO=300V)2)Low collector output capacitance. (Typ.3pF at VCB=30V)3)Ideal for chroma circuit.lApplicationlCHROMA OUTPUT, VIDEO SIGNAL AMPLIFI

2SC4097DatasheetMedium Power Transistor (32V, 500mA)lOutlinelParameter Value UMT3VCEO32VIC500mASOT-323SC-70 lFeaturesl1)High ICMax.lInner circuitl ICMax.=0.5A2)Low VCE(sat). Optimal for low voltage operation.3)Complements the 2SA1577.lApplicationlDRIVING CIRCUIT,LOW FREQUEN

High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC56612) Small rbbCc and high gain. (Typ. 6ps) 3) Small NF. (1) BasePackaging specifications and hFE ROHM : VMT3 (2) EmitterType 2SC5661 2SC4725 2SC4082 2SC3837K(3) CollectorPackage

Chroma amplifier transistor (300V, 0.1A) 2SC4061K / 2SC3415S / 2SC4015 Features Dimensions (Unit : mm) 1) High breakdown voltage. (BVCEO=300V) 2SC4061K2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. 1.62.8(1) EmitterAbsolute maximum ratings (Ta=25C) (2) Base(3) CollectorParameter Symbol Limits Unit0.3Min.ROHM

General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Features Dimensions (Unit : mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC46172. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. (1)(2)(3)1.251.6 0.82.12.81.6Structure Epitaxial planar type 0.1Min. 0.1Min.0.3Min.NPN

AEC-Q101 QualifiedHigh-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K 2SC5659FHA / 2SC4618FRA / 2SC4098FRA / 2SC2413KFeatures Dimensions (Unit : mm) 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2SC5659FHA2SC56591.22) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2(2)(3)(1)(1) Base0.15Max.

2SC4081 FRADatasheetGeneral purpose small signal amplifier(50V, 150mA)AEC-Q101 QualifiedlOutlinel SOT-323 Parameter Value SC-70 VCEO50VIC150mAUMT3lFeatures lInner circuitl l1)Low Cob.Cob=2.0pF(Typ.)2)Complements the 2SA1576A FRA.lApplicationlGENERAL PURPOSE SMALL SIGNAL AMPLIFIER

2SC4083DatasheetHigh-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)lOutlinel SOT-323 Parameter Value SC-70 VCEO11VIC50mAUMT3 lFeatures lInner circuitl l1)High transition frequency.(Typ.fT=3.2GHz)2)Small rbb'Cc and high gain.(Typ.4ps)3)Small NFlApplicationlUHF/VHF

High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC56612) Small rbbCc and high gain. (Typ. 6ps) 3) Small NF. (1) BasePackaging specifications and hFE ROHM : VMT3 (2) EmitterType 2SC5661 2SC4725 2SC4082 2SC3837K(3) CollectorPackage

2SC4098DatasheetDatasheetHigh frequency amplifier transistor (25V, 50mA, 300MHz)lOutlinel SOT-323 Parameter Value SC-70 VCEO25VIC50mAUMT3lFeatures lInner circuitl l1)Low collector capacitance. (Cob:Typ.1.3pF)lApplicationlHIGH FREQUENCY AMPLIFIER, FREQUENCY CONVERTERRF AMPLIFIER, LOCAL OSCILLATORlPackaging specifi

2SC5658 / 2SC4617EB / 2SC46172SC4081UB / 2SC4081U3 / 2SC2412KDatasheetGeneral purpose small signal amplifier(50V, 150mA)lOutlinelParameter Value SC-105AA SOT-416FLVCEO50VIC150mA 2SC5658 2SC4617EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/2SC4617 2SC4081UB 2SA1774EB/2SA

2SC5658 / 2SC4617EB / 2SC46172SC4081UB / 2SC4081 / 2SC2412KDatasheetGeneral purpose small signal amplifier(50V, 150mA)lOutlinelParameter Value SC-105AA SOT-416FLVCEO50VIC150mA 2SC5658 2SC4617EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/2SC4617 2SC4081UB 2SA1774EB/2SA17

High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K Features Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT= 3.2GHz) 2SC56621.22) Small rbbCc and high gain. (Typ. 4ps) 0.323) Small NF. (3)(1)(2)0.220.130.4 0.4 0.5(1) Base0.8(2) Emitter(3) CollectorROHM : VMT3Packaging specifications and

MCC2SC4097-PTMMicro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components2SC4097-QCA 91311Phone: (818) 701-49332SC4097-RFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) High Icmax. Icmax=0.5A NPN Silicon Low VCE(SAT). Optimal for low voltage operation.

MCC2SC4097-PTMMicro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components2SC4097-QCA 91311Phone: (818) 701-49332SC4097-RFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) High Icmax. Icmax=0.5A NPN Silicon Low VCE(SAT). Optimal for low voltage operation.

MCC2SC4097-PTMMicro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components2SC4097-QCA 91311Phone: (818) 701-49332SC4097-RFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) High Icmax. Icmax=0.5A NPN Silicon Low VCE(SAT). Optimal for low voltage operation.

2SC4081-AMCCMicro Commercial ComponentsTM2SC4081-B20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC4081-CPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN SiliconRoHS Compliant. See ordering information) Low Cob . Cob=2.0pF(Typ)Epitaxial Transistors Complementary to 2SC157

2SC4097Features Low VCE(sat) Optimal for Low Voltage Operation Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1NPN Silicon Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSEpitaxial TransistorsCompliant. See Ordering Information)Maximum Ratings @ 25C Unless Otherwise Specified O

2SC4081-AMCCMicro Commercial ComponentsTM2SC4081-B20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC4081-CPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN SiliconRoHS Compliant. See ordering information) Low Cob . Cob=2.0pF(Typ)Epitaxial Transistors Complementary to 2SC157

2SC4081Features Low Cob Complementary to 2SC1576A Halogen Free. Green Device (Note 1)NPN Silicon Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingEpitaxial Transistors Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Ratings @ 25C Unless Otherwise Specified Operating

2SC4081-AMCCMicro Commercial ComponentsTM2SC4081-B20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC4081-CPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN SiliconRoHS Compliant. See ordering information) Low Cob . Cob=2.0pF(Typ)Epitaxial Transistors Complementary to 2SC157

Ordering number : EN2262F2SA1552/2SC4027Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 1.5A, Low VCE sat PNP NPN Single TP/TP-FAApplications Converters, inverters, color TV audio outputFeatures Adoption of FBET, MBIT processes High voltage and large current capacity Ultrahigh-speed switching Small and slim package permitting 2SA1552 / 2SC402

2SC4081RT1General PurposeAmplifier TransistorNPN Surface Mounthttp://onsemi.comFeatures Moisture Sensitivity Level: 1COLLECTOR Pb-Free Package is Available3MAXIMUM RATINGS (TA = 25C)Rating Symbol Value UnitCollector-Base Voltage V(BR)CBO 60 VdcCollector-Emitter Voltage V(BR)CEO 50 Vdc1 2BASE EMITTEREmitter-Base Voltage V(BR)EBO 7.0 VdcCollector Current

Power Transistors2SC4026Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh-speed switching 3.1 0.1High collector to base voltage VCBOWide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to th

Power Transistors2SC4004Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh-speed switchingHigh collector to base voltage VCBO 3.1 0.1Wide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to th

UNISONIC TECHNOLOGIES CO., LTD 2SC4027 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS 1 FEATURES TO-220* High voltage and large current capacity. * Fast switching time. 1TO-252 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC4027L-x-TA3-T 2SC4027G-x-TA3-T TO-220 B C E Tube2SC4027L-x-TN3-R 2SC4027G-

2SC4050Silicon NPN EpitaxialApplicationLow frequency amplifier, switchingOutlineMPAK311. Emitter2. Base23. Collector2SC4050Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissipation PC 150 mWJu

2SC4046Silicon NPN EpitaxialApplicationHigh voltage amplifierOutlineTO-126 MOD1. Emitter2. Collector3. Base123Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 5VCollector current IC 0.2 ACollector power dissipation PC*1 8WJunction temperature

AAA

LOW VCE (sat) 2SC4064Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1567)Application : DC Motor Driver and General PurposeExternal Dimensions FM20(TO220F)(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical CharacteristicsSymbol 2SC4064 Unit Symbol Conditions 2SC4064 Unit0.24.20.210.1c0.52.8VCBO 50 V ICBO VCB=50V 100max AVCEO 50 V IEBO VEB

2SC4097 0.5A , 32V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES High ICMax. ICMax=0.5A. Low VCE(sat). Optimal for low voltage operation. AL Complementary to 2SA1577 33Top View C B11 22K EMECHANICAL DATA D Terminals: Solderable per MIL-STD-202,

2SC4081F 0.15A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES Low Cob. Cob=2.0pF (Typ.) Excellent hFE linearity AL Complementary to 2SA1576A 33Top View C B11 22K ECLASSIFICATION OF hFE DH JProduct-Rank 2SC4081F-Q 2SC4081F-R 2SC4081F-S F G

2SC4098 0.05A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 Low Collector Capacitance. High Gain. AL3 3Top View C B1CLASSIFICATION OF hFE 1 22K EProduct-Rank 2SC4098-N 2SC4098-P 2SC4098-QDRange 56~120 82~180 120~270H JF GMarking

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC4081 TRANSISTOR (NPN) FEATURES 1. BASE 2. EMITTER Excellent hFE linearity 3. COLLECTOR Complements the 2A1576A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VVEBO

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4054 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 600 V VCEO Collector-

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4053 DESCRIPTION With TO-220C package High voltage,High speed switching High reliability PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 600 V VCEO Colle

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4026 DESCRIPTION With TO-220Fa package High breakdown voltage High speed switching Wide area of safe operation (SOA) APPLICATIONS For high breakdown voltage high-speed switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolu

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4056 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 600 V VCEO Collector-

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4057 DESCRIPTION With TO-247 package High voltage;high speed Switching power transistor PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collecto

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4055 DESCRIPTION With TO-220C package High voltage,High speed switching High reliability PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 600 V V

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4052 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 600 V VCEO Collector-

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4029 DESCRIPTION With TO-3PL package Complement to type 2SA1553 APPLICATIONS Power amplifier applications Recommended for 120W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3

Product Specification Silicon NPN Power Transistor 2SC4060 DESCRIPTION High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) High Switching Speed High Reliability APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 600 V VCEO Colle

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4058 DESCRIPTION With TO-247 package High voltage;high speed Switching power transistor PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collecto

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4004 DESCRIPTION With TO-220Fa package Satisfactory linearity of foward current transfer ratio hFE Wide area of safe operation (ASO) High-speed switching High collector to base voltage VCBO APPLICATIONS For high breakdown voltage high-speed switching PINNING PIN DESCRIPTION1 Base 2 Collec

2SC4020Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-25(TO220)Symbol 2SC4020 Symbol Conditions 2SC4020 UnitUnit0.24.80.210.20.12.0VCBO 900 ICBO VCB=800V 100max AVVCEO 800 IEB

LOW VCE (sat) 2SC4064Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1567)Application : DC Motor Driver and General PurposeExternal Dimensions FM20(TO220F)(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical CharacteristicsSymbol 2SC4064 Unit Symbol Conditions 2SC4064 Unit0.24.20.210.1c0.52.8VCBO 50 V ICBO VCB=50V 100max AVCEO 50 V IEBO VEB

CEquivalentcircuitBBuilt-in Diode at CELow VCE (sat) 2SC4065(400)ESilicon NPN Epitaxial Planar Transistor (Complement to type 2SA1568)Application : DC Motor Driver and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)SymbolSymbol 2SC4065 Unit Conditions 2SC4065Unit0.24.20.210.

2SC4073Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4073 Unit Symbol Conditions 2SC4073 Unit0.24.20.210.1c0.52.8VCBO 500 V VCB=500V 100max AICBO

High hFELOW VCE (sat) 2SC4024Silicon NPN Epitaxial Planar TransistorApplication : DC-DC Converter, Emergency Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol Conditions 2SC4024Symbol 2SC4024 Unit Unit0.24.20.210.1c0.52.8ICBO VCB=100V 10maxVCBO 100 V AIEBO VE

2SC4097TRANSISTOR (NPN)SOT-323 3 FEATURES High ICMax. ICMax=0.5A 1 Low VCE(sat).Optimal for low voltage operation. 2 Complements the 2SA1577 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collec

2SC4081TRANSISTOR (NPN)SOT-323 FEATURES Excellent hFE linearity Complements the 2A1576A 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VVEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipat

2 SC4098TRANSISTOR (NPN)FEATURES SOT323 Low Collector Capacitance High Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO1. BASE V Collector-Emitter Voltage 25 V 2. EMITTER CEO3. COLLECTOR V Emitter-Base Voltage 5 V EBOI Collector Current 50 mA CP Collector Power Dissipation 200 m

2SC4097 SOT-323 Transistor(NPN)1. BASE SOT-3232. EMITTER 3. COLLECTOR Features High ICMax. ICMax=0.5A Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1577 MAXIMUM RATINGS (TA=25unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V Dimensions in inches and (millimeters)VEBO

2SC4081 SOT-323 Transistor(NPN)1. BASE SOT-3232. EMITTER 3. COLLECTOR Features Excellent hFE linearity Complements the 2A1576A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VDimensions in inches and (millimeters)VCEO Collector-Emitter Voltage 50 VVEBO Emitter-Base Voltage 7 V IC Collector Current

2SC4003(NPN) TO-251/TO-252-2L TransistorTO-2511. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High hFE hFE=60 to 200 low VCE(sat) VCE(sat)=0.6V MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2LSymbol Parameter Value UnitsVCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continu

2SC4081General Purpose TransistorCOLLECTOR33NPN SiliconP b Lead(Pb)-Free112BASE2FEATURES SOT-323(SC-70)EMITTERExcellent hFE linearityComplements the 2A1576A MAXIMUM RATINGS (TA=25 unless otherwise noted)Parameter Symbol Value UnitsCollector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO V50 7 VEmitter-Base Voltage VEBOCollector Current -C

2SC4083NPN Silicon Transistor3P b Lead(Pb)-Free121. BASEFEATURES:2. EMITTER3. COLLECTOR* Radio frequency amplifier* High transition frequency SOT-323(SC-70)* High gain with low collector-to base time constant* Low noise (NF)* Marking: 1D( T =25C unless otherwise noted)Maximum Ratings ARating Symbol Value UnitVCBOCollector-Base Voltage 20 VVCEOCollecto

FM120-M WILLASTHRU2SC4081xT1 SOT-323 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offersTRANSISTOR (NPN) better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted appli

2SC4081W(BR3DG4081W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 NPN Silicon NPN transistor in a SOT-323 Plastic Package. / Features Low Cob. / Applications General amplifier. / Equivalent Circuit / Pinning 3 2 1 PIN1Emit

ST 2SC4073U NPN Silicon Epitaxial Planar Transistor General purpose amplifier and high voltage application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage VCBO 120 V Collector Emitter Voltage VCEO 120 V Emitter Base Voltage VEBO 6 V Collector Current IC 1 A Peak Collector Current (Single pulse, tp = 300 s) ICP 2 A0.5 Ptot W T

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL2SC4081QT1G SeriesFEATURE Low Cob,Cob=2pF(Typ.).S-L2SC4081QT1G Series Epitaxial planar type. PNP complement:L2SA1576A We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierL2SC4083NT1GTransistor Series We declare that the material of product compliance with RoHS requirements. S-L2SC4083NT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.Ordering InformationDevice Marking ShippingL2SC4083NT1G3000

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistorL2SC4083NWT1G We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SC4083NWT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 31Ordering Information2Device Marking ShippingL2SC4083NWT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL2SC4081QT1G SeriesFEATURE Low Cob,Cob=2pF(Typ.).S-L2SC4081QT1G Series Epitaxial planar type. PNP complement:L2SA1576A3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL2SC4081QT1G SeriesFEATURE Low Cob,Cob=2pF(Typ.).S-L2SC4081QT1G Series Epitaxial planar type. PNP complement:L2SA1576A We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistorL2SC4083PWT1G We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SC4083PWT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 31Ordering Information2Device Marking ShippingL2SC4083PWT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL2SC4081QT1G SeriesFEATURE Low Cob,Cob=2pF(Typ.).S-L2SC4081QT1G Series Epitaxial planar type. PNP complement:L2SA1576A3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistorL2SC4083QWT1G We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SC4083QWT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 31Ordering Information2Device Marking ShippingL2SC4083QWT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL2SC4081QT1G SeriesFEATURE Low Cob,Cob=2pF(Typ.).S-L2SC4081QT1G Series Epitaxial planar type. PNP complement:L2SA1576A We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistorL2SC4083PWT1G We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SC4083PWT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 31Ordering Information2Device Marking ShippingL2SC4083PWT1G

SMD Type TransistorsNPN Transistors2SC4050SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=100mA1 2 Collector Emitter Voltage VCEO=120V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Co

SMD Type TransistorsNPN Transistors2SC40801.70 0.1 Features High fT. High breakdown voltage. Complementary to 2SA15750.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 200 Collector - Emitter Voltage VCEO 200 V Emitter - Base Voltage VEBO 4 Collector Curren

SMD Type TransistorsNPN Transistors2SC4097 Features High ICMax.ICMax. = 0.5A Low VCE(sat). Complementary to 2SA15771 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 32 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 0.5 A

SMD Type TransistorsNPN Transistors2SC4081 Features Low Cob. Cob=2.0pF (Typ.) Complementary to 2SA1576A1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 7 Collector Current - Continuous IC 150 mA Collector Power D

CHENMKO ENTERPRISE CO.,LTD2SC4097GPSURFACE MOUNT Medium Power NPN Transistor VOLTAGE 32 Volts CURRENT 0.5 AmpereAPPLICATION* Medium Power Amplifier .FEATURE* Surface mount package. (SC-70/SOT-323)SC-70/SOT-323* Low saturation voltage V* Low cob. Cob=6.0pF(Typ.)CE(sat)=0.4V(max.)(IC=500mA) * PC= 200mW (mounted on ceramic substrate).* High saturation current capability

2SC4083PWT1Go Absolute maximum ratings (Ta=25 C)Symbol Limits UnitParameter3COLLECTORCollector-base voltage VCBO 20VVCEO 11 VCollector-emitter voltage1Emitter-base voltage VEBO 3 VBASECollector current IC 50 mACollector power dissipation PC 0.15W2oJunction temperatureEMITTERT 150 CjoStorage temperatureTstg - 55~+150COrdering InformationD

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC4064DESCRIPTIONLow Collector Saturation Voltage: V = 0.35V(Max)@ I =6ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOComplement to Type 2SA1567APPLICATIONSDesigned for use in DC motor driver and generalpurpose applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER V

isc Silicon NPN Power Transistor 2SC4007DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SA1634Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose a

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4054 DESCRIPTION With ITO-220 package Switching power transistor High voltage ,high speed PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltag

isc Silicon NPN Power Transistors 2SC4053DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

isc Silicon NPN Power Transistor 2SC4026DESCRIPTION Collector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4056 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 600 V VCEO C

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4057 DESCRIPTION With TO-247 package High voltage;high speed Switching power transistor PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE U

isc Silicon NPN Power Transistor 2SC4020DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 0.7ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 800V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned switching regulator and general purposeapplications.ABSOLUTE

isc Silicon NPN Power Transistors 2SC4055DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4064 DESCRIPTION Low Collector Saturation Voltage : VCE(sat)= 0.35V(Max)@ IC=6A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) Complement to Type 2SA1567 APPLICATIONS Designed for use in DC motor driver and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4052 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 600 V VCEO C

isc Silicon NPN Power Transistor 2SC4029DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOComplement to Type 2SA1553Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 120W high fidelity audio frequency ampl

isc Silicon NPN Power Transistor 2SC4003DESCRIPTIONHigh hFELow collector-to-emitter saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 400 VCBOV Collector-Emitter

isc Silicon NPN Power Transistor 2SC4073DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4059 DESCRIPTION With TO-247 package High voltage;high speed Switching power transistor PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE U

isc Silicon NPN Power Transistor 2SC4001DESCRIPTIONThe 2SC4001is designed for uses of high-resolution monitorTV applications.This makes it possible to raise the video bandOf high-resolution monitor TVs to 50MHz.Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationFEATURESCollectorEmitter Sustaining Voltage-: V = 300 V(Min)CBOComplemen

isc Silicon NPN Power Transistor 2SC4008DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SA1635Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose a

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4060 DESCRIPTION With TO-247 package Switching power transistor High voltage,high speed PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE U

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4058 DESCRIPTION With TO-247 package High voltage;high speed Switching power transistor PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE U

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4024DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDC-DC converter,Emergency lighting Inverterand general purposeABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistors 2SC4051DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

isc Silicon NPN Power Transistor 2SC4027DESCRIPTIONHigh voltage and large current capacityUltrahigh-speed switchingSmall and slim package permitting100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SA1552APPLICATIONSConverters , inverters and color TV audio outputABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Power Transistor 2SC4075DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV chroma output, sound output andB/W TV video output, audio output applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon NPN Power Transistor 2SC4004DESCRIPTION Collector-Base Breakdown Voltage-: V = 900V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT