2SC40 datasheet, аналоги, основные параметры
Наименование производителя: 2SC40 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 165 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 300 MHz
Ёмкость коллекторного перехода (Cc): 4 pf
Статический коэффициент передачи тока (hFE): 50
Корпус транзистора: TO18
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Аналоги (замена) для 2SC40
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2SC40 даташит
2sc4096.pdf
Power Transistors 2SC4096 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) 1.5 Satisfactory linearity of foward current transfer ratio hFE 1.5 2.0 0.3 2.7 0.3 3.0 0.3 Absolute Maximum R
2sa1575 2sc4080.pdf
Ordering number EN3171 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1575/2SC4080 High-Frequency Amplifier, Wide-Band Amplifier Applications Features Package Dimensions High fT. unit mm High breakdown voltage. 2038 Small reverse transfer capacitance and excellent [2SA1575/2SC4080] high-frequency characteristic. Adoption of FBET process. E Emitter C Collector
2sc4031.pdf
Ordering number EN2478B NPN Triple Diffused Planar Silicon Transistor 2SC4031 900V/20mA Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=900V). unit mm Small Output Capacitance (Cob typ=1.6pF). 2049C Wide ASO (adoption of MBIT process). [2SC4031] High reliability (adoption of HVP process). 10.2 4.5 1.3 1.2 0.8 0.4 1 2 3 1 B
2sa1552 2sc4027.pdf
Ordering number EN2262D 2SA1552 / 2SC4027 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching 2SA1552 / 2SC4027 Applications Applications Converters, inverters, color TV audio output. Features Adoption of FBET, MBIT processes. High voltage and large current capacity. Ultrahigh-speed switching. Small and slim p
2sc4030.pdf
Ordering number EN2477B NPN Triple Diffused Planar Silicon Transistor 2SC4030 900V/50mA Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=900V). unit mm Small Output Capacitance (Cob typ=2.0pF). 2049C Wide ASO (adoption of MBIT process). [2SC4030] High reliability (adoption of HVP process). 10.2 4.5 1.3 1.2 0.8 0.4 1 2 3 1 B
2sc4003.pdf
Ordering number EN2959A NPN Triple Diffused Planar Silicon Transistor 2SC4003 High-Voltage Driver Applications Features Package Dimensions High breakdown voltage. unit mm Adoption of MBIT process. 2045B Excellent hFE linearity. [2SC4003] 1 Base 2 Collector 3 Emitter 4 Collector SANYO TP unit mm 2044B [2SC4003] 1 Base 2 Collector 3 Emitter 4 Co
2sc4006.pdf
Ordering number EN2272A NPN Planar Type Silicon Darlington Transistor 2SC4006 Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2041A [2SC4006] 4.5 10.0 Features 2.8 3.2 High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 50 8
2sc4002.pdf
Ordering number EN2960 NPN Triple Diffused Planar Silicon Transistor 2SC4002 High-Voltage Driver Applications Features Package Dimensions High breakdown voltage. unit mm Adoption of MBIT process. 2003B Excellent hFE linearity. [2SC4002] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 Emitter 2 Collector 3 Base 1 2 3 SANYO NP JEDEC TO-92 1.3 1.3 EIAJ SC-43 Spec
2sc4027.pdf
Ordering number ENN2262B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1552/2SC4027 High-Voltage Switching Applications Applications Package Dimensions Converters, inverters, color TV audio output. unit mm 2045B Features [2SA1552/2SC4027] 6.5 Adoption of FBET, MBIT processes. 2.3 5.0 0.5 4 High voltage and large current capacity. Fast switching time. Small
2sc4075.pdf
Ordering number EN2532 NPN Triple Diffused Planar Silicon Transistor 2SC4075 Color TV Chroma Output and Audio Output Applications Applications Package Dimensions Color TV chroma output, sound output and B/W TV unit mm video output, audio output applications. 2041A [2SC4075] 4.5 10.0 Features 2.8 3.2 Highly resistant to breakdown and wide ASO. Micaless package facili
2sc4005.pdf
Ordering number EN2271A NPN Planar Type Silicon Darlington Transistor 2SC4005 Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2041A [2SC4005] 4.5 10.0 Features 2.8 3.2 High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 50 8
r07ds0274ej 2sc4050-1.pdf
Preliminary Datasheet R07DS0274EJ0300 2SC4050 (Previous REJ03G0715-0200) Rev.3.00 Silicon NPN Epitaxial Mar 28, 2011 Application Low frequency amplifier, switching Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 1. Emitter 3 2. Base 3. Collector 1 2 Note Marking is KIE . Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collect
ne856 2sc5011 2sc5006 2sc4226 2sc3355 2sc3603 2sc3356 2sc3357 2sc3603 2sc4093.pdf
NEC's NPN SILICON HIGH NE856 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 7 GHz LOW NOISE FIGURE 1.1 dB at 1 GHz HIGH COLLECTOR CURRENT 100 mA HIGH RELIABILITY METALLIZATION 35 (MICRO-X) 00 (CHIP) LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator application
2sc4094.pdf
DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4094 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4094 is an NPN epitaxial silicon transistor designed for use in (Units mm) low-noise and small signal amplifiers from VHF band to UHF band. Low- +0.2 noise figure, high gain, and high current capability achieve a ver
2sc2351 2sc2149 2sc4092 ne02133 ne02135 ne02139.pdf
NEC's NPN SILICON HIGH NE021 FREQUENCY TRANSISTOR SERIES FEATURES HIGH INSERTION GAIN 18.5 dB at 500 MHz LOW NOISE FIGURE 1.5 dB at 500 MHz HIGH POWER GAIN 12 dB at 2 GHz LARGE DYNAMIC RANGE 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION 00 (CHIP) 07/07B NEC's NE021 series of NPN silicon transistors provides eco- nomical solutions to wide ranges of amplifier a
2sc4095.pdf
DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4095 is an NPN epitaxial silicon transistor designed for use in (Units mm) low-noise and small signal amplifiers from VHF band to UHF band. +0.2 2SC4095 features excellent power gain with very low-noise figures. 2.8
ne680xx 2sc5013 2sc5008 2sc4228 2sc3585 2sc3587 2sc4095.pdf
NEC's NPN SILICON HIGH NE680 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 10 GHz LOW NOISE FIGURE 1.7 dB at 2 GHz 2.6 dB at 4 GHz HIGH ASSOCIATED GAIN 12.5 dB at 2 GHz 8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE 00 (CHIP) 35 (MICRO-X) LOW CURRENT PERFORMANCE DESCRIPTION NEC's NE680 series of NPN epitaxial silicon transistors is designed for l
2sc4093.pdf
DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4093 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4093 is an NPN silicon epitaxial transistor designed for low (Units mm) noise amplifier at VHF, UHF and CATV band. +0.2 It has large dynamic range and good current characteritics, and is 2.8 -0.3 +0.2 1.5 -0.1 co
2sc5012 2sc5007 2sc4227 2sc3583 2sc3604 2sc4094 ne681.pdf
NEC's NPN SILICON HIGH NE681 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 8 GHz LOW NOISE FIGURE 1.2 dB at 1 GHz 1.6 dB at 2 GHz HIGH ASSOCIATED GAIN 15 dB at 1 GHz 12 dB at 2 GHz LOW COST 00 (CHIP) 35 (MICRO-X) DESCRIPTION NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier a
2sc4092.pdf
DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4092 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4092 is an NPN silicon epitaxial transistor designed for low- (Units mm) noise amplifier at VHF, UHF band. +0.2 It is contained in 4 pins mini-mold package which enables high-isolation 2.8 -0.3 +0.2 1.5 -0.1
2sc4097fra.pdf
2SC4097FRA 2SC4097 Transistors AEC-Q101 Qualified Medium Power Transistor (32V, 0.5A) 2SC4097 2SC4097FRA Features External dimensions (Units mm) 1) High ICMax. ICMax. = 0.5A 2SC4097FRA 2SC4097 2) Low VCE(sat). Optimal for low voltage operation. 2.0 0.2 1.3 0.1 0.9 0.1 3) Complements the 2SA1577. 2SA1577FRA 0.65 0.65 0.7 0.1 0.2 (1) (2) 0 0.1 (3) Structure A
2sc5659 2sc5659 2sc4618 2sc4098 2sc2413k.pdf
High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K Features Dimensions (Unit mm) 1) Low collector capacitance. (Cob Typ. 1.3pF) 2SC5659 1.2 2) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2 (2) (3) (1) (1) Base 0.15Max. ROHM VMT3 (2) Emitter Absolute maximum ratings (Ta=25 C) (3) Collector
2sc4081ub.pdf
General purpose small signal amplifier (50V, 0.15A) 2SC4081UB Applications Dimensions (Unit mm) General purpose small signal amplifier UMT3F 2.0 0.9 0.32 Features 1) Low Cob. (3) Cob=2.0pF (Typ.) 2) Complements the 2SA1576UB. (1) (2) 0.13 0.65 0.65 1.3 Structure NPN silicon epitaxial planar transistor Each lead has same dimensions (1) Base (2) Emitt
2sc4081u3hzg.pdf
2SC4081U3 HZG Datasheet General purpose small signal amplifier(50V, 150mA) AEC-Q101 Qualified lOutline l SOT-323 Parameter Value SC-70 VCEO 50V IC 150mA UMT3 lFeatures lInner circuit l l 1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA1576U3 HZG. lApplication l GENERAL PURPOSE SMALL SIGNAL AMPLIFIER lPackaging specifications l P
2sc4061k.pdf
2SC4061K Datasheet Chroma amplifier transistor (300V,100mA) lOutline l SOT-346 Parameter Value SC-59 VCEO 300V IC 100mA SMT3 lFeatures lInner circuit l l 1)High breakdown voltage.(BVCEO=300V) 2)Low collector output capacitance. (Typ.3pF at VCB=30V) 3)Ideal for chroma circuit. lApplication l CHROMA OUTPUT, VIDEO SIGNAL AMPLIFI
2sc4097.pdf
2SC4097 Datasheet Medium Power Transistor (32V, 500mA) lOutline l Parameter Value UMT3 VCEO 32V IC 500mA SOT-323 SC-70 lFeatures l 1)High ICMax. lInner circuit l ICMax.=0.5A 2)Low VCE(sat). Optimal for low voltage operation. 3)Complements the 2SA1577. lApplication l DRIVING CIRCUIT,LOW FREQUEN
2sc4725 2sc5661 2sc4725 2sc4082 2sc3837k.pdf
High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC5661 2) Small rbb Cc and high gain. (Typ. 6ps) 3) Small NF. (1) Base Packaging specifications and hFE ROHM VMT3 (2) Emitter Type 2SC5661 2SC4725 2SC4082 2SC3837K (3) Collector Package
2sc4061k 2sc3415s 2sc4015.pdf
Chroma amplifier transistor (300V, 0.1A) 2SC4061K / 2SC3415S / 2SC4015 Features Dimensions (Unit mm) 1) High breakdown voltage. (BVCEO=300V) 2SC4061K 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. 1.6 2.8 (1) Emitter Absolute maximum ratings (Ta=25 C) (2) Base (3) Collector Parameter Symbol Limits Unit 0.3Min. ROHM
2sc2412k 2sc4081 2sc4617 2sc5658 2sc1740s.pdf
General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Features Dimensions (Unit mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC4617 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. (1) (2) (3) 1.25 1.6 0.8 2.1 2.8 1.6 Structure Epitaxial planar type 0.1Min. 0.1Min. 0.3Min. NPN
2sc4098fra.pdf
AEC-Q101 Qualified High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K 2SC5659FHA / 2SC4618FRA / 2SC4098FRA / 2SC2413K Features Dimensions (Unit mm) 1) Low collector capacitance. (Cob Typ. 1.3pF) 2SC5659FHA 2SC5659 1.2 2) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2 (2) (3) (1) (1) Base 0.15Max.
2sc4083.pdf
2SC4083 Datasheet High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) lOutline l SOT-323 Parameter Value SC-70 VCEO 11V IC 50mA UMT3 lFeatures lInner circuit l l 1)High transition frequency.(Typ.fT=3.2GHz) 2)Small rbb' Cc and high gain.(Typ.4ps) 3)Small NF lApplication l UHF/VHF
2sc5661 2sc4725 2sc4082 2sc3837k.pdf
High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC5661 2) Small rbb Cc and high gain. (Typ. 6ps) 3) Small NF. (1) Base Packaging specifications and hFE ROHM VMT3 (2) Emitter Type 2SC5661 2SC4725 2SC4082 2SC3837K (3) Collector Package
2sc4098.pdf
2SC4098 Datasheet Datasheet High frequency amplifier transistor (25V, 50mA, 300MHz) lOutline l SOT-323 Parameter Value SC-70 VCEO 25V IC 50mA UMT3 lFeatures lInner circuit l l 1)Low collector capacitance. (Cob Typ.1.3pF) lApplication l HIGH FREQUENCY AMPLIFIER, FREQUENCY CONVERTER RF AMPLIFIER, LOCAL OSCILLATOR lPackaging specifi
2sc5658 2sc4617eb 2sc4617 2sc4081ub 2sc4081u3 2sc2412k.pdf
2SC5658 / 2SC4617EB / 2SC4617 2SC4081UB / 2SC4081U3 / 2SC2412K Datasheet General purpose small signal amplifier (50V, 150mA) lOutline l Parameter Value SC-105AA SOT-416FL VCEO 50V IC 150mA 2SC5658 2SC4617EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/ 2SC4617 2SC4081UB 2SA1774EB/2SA
2sc5658 2sc4617eb 2sc4617 2sc4081ub 2sc4081 2sc2412k.pdf
2SC5658 / 2SC4617EB / 2SC4617 2SC4081UB / 2SC4081 / 2SC2412K Datasheet General purpose small signal amplifier (50V, 150mA) lOutline l Parameter Value SC-105AA SOT-416FL VCEO 50V IC 150mA 2SC5658 2SC4617EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/ 2SC4617 2SC4081UB 2SA1774EB/2SA17
2sc4726 2sc5662 2sc4726 2sc4083 2sc3838k.pdf
High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K Features Dimensions (Unit mm) 1) High transition frequency. (Typ. fT= 3.2GHz) 2SC5662 1.2 2) Small rbb Cc and high gain. (Typ. 4ps) 0.32 3) Small NF. (3) (1)(2) 0.22 0.13 0.4 0.4 0.5 (1) Base 0.8 (2) Emitter (3) Collector ROHM VMT3 Packaging specifications and
2sc4097-q.pdf
MCC 2SC4097-P TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components 2SC4097-Q CA 91311 Phone (818) 701-4933 2SC4097-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) High Icmax. Icmax=0.5A NPN Silicon Low VCE(SAT). Optimal for low voltage operation.
2sc4097-p.pdf
MCC 2SC4097-P TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components 2SC4097-Q CA 91311 Phone (818) 701-4933 2SC4097-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) High Icmax. Icmax=0.5A NPN Silicon Low VCE(SAT). Optimal for low voltage operation.
2sc4097-r.pdf
MCC 2SC4097-P TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components 2SC4097-Q CA 91311 Phone (818) 701-4933 2SC4097-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) High Icmax. Icmax=0.5A NPN Silicon Low VCE(SAT). Optimal for low voltage operation.
2sc4081-b.pdf
2SC4081-A MCC Micro Commercial Components TM 2SC4081-B 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC4081-C Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Silicon RoHS Compliant. See ordering information) Low Cob . Cob=2.0pF(Typ) Epitaxial Transistors Complementary to 2SC157
2sc4097.pdf
2SC4097 Features Low VCE(sat) Optimal for Low Voltage Operation Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 NPN Silicon Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Epitaxial Transistors Compliant. See Ordering Information) Maximum Ratings @ 25 C Unless Otherwise Specified O
2sc4081-a.pdf
2SC4081-A MCC Micro Commercial Components TM 2SC4081-B 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC4081-C Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Silicon RoHS Compliant. See ordering information) Low Cob . Cob=2.0pF(Typ) Epitaxial Transistors Complementary to 2SC157
2sc4081.pdf
2SC4081 Features Low Cob Complementary to 2SC1576A Halogen Free. Green Device (Note 1) NPN Silicon Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Epitaxial Transistors Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings @ 25 C Unless Otherwise Specified Operating
2sc4081-c.pdf
2SC4081-A MCC Micro Commercial Components TM 2SC4081-B 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC4081-C Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Silicon RoHS Compliant. See ordering information) Low Cob . Cob=2.0pF(Typ) Epitaxial Transistors Complementary to 2SC157
2sa1552 2sc4027.pdf
Ordering number EN2262F 2SA1552/2SC4027 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 160V, 1.5A, Low VCE sat PNP NPN Single TP/TP-FA Applications Converters, inverters, color TV audio output Features Adoption of FBET, MBIT processes High voltage and large current capacity Ultrahigh-speed switching Small and slim package permitting 2SA1552 / 2SC402
2sc4081rt1-d.pdf
2SC4081RT1 General Purpose Amplifier Transistor NPN Surface Mount http //onsemi.com Features Moisture Sensitivity Level 1 COLLECTOR Pb-Free Package is Available 3 MAXIMUM RATINGS (TA = 25 C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc 1 2 BASE EMITTER Emitter-Base Voltage V(BR)EBO 7.0 Vdc Collector Current
2sc4026.pdf
Power Transistors 2SC4026 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High-speed switching 3.1 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to th
2sc4004.pdf
Power Transistors 2SC4004 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High-speed switching High collector to base voltage VCBO 3.1 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to th
2sc4027.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC4027 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS 1 FEATURES TO-220 * High voltage and large current capacity. * Fast switching time. 1 TO-252 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC4027L-x-TA3-T 2SC4027G-x-TA3-T TO-220 B C E Tube 2SC4027L-x-TN3-R 2SC4027G-
2sc4050.pdf
2SC4050 Silicon NPN Epitaxial Application Low frequency amplifier, switching Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4050 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipation PC 150 mW Ju
2sc4046.pdf
2SC4046 Silicon NPN Epitaxial Application High voltage amplifier Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5V Collector current IC 0.2 A Collector power dissipation PC*1 8W Junction temperature
2sc4064.pdf
LOW VCE (sat) 2SC4064 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1567) Application DC Motor Driver and General Purpose External Dimensions FM20(TO220F) (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics Symbol 2SC4064 Unit Symbol Conditions 2SC4064 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 50 V ICBO VCB=50V 100max A VCEO 50 V IEBO VEB
2sc4097.pdf
2SC4097 0.5A , 32V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES High ICMax. ICMax=0.5A. Low VCE(sat). Optimal for low voltage operation. A L Complementary to 2SA1577 3 3 Top View C B 1 1 2 2 K E MECHANICAL DATA D Terminals Solderable per MIL-STD-202,
2sc4081f.pdf
2SC4081F 0.15A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES Low Cob. Cob=2.0pF (Typ.) Excellent hFE linearity A L Complementary to 2SA1576A 3 3 Top View C B 1 1 2 2 K E CLASSIFICATION OF hFE D H J Product-Rank 2SC4081F-Q 2SC4081F-R 2SC4081F-S F G
2sc4098.pdf
2SC4098 0.05A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 Low Collector Capacitance. High Gain. A L 3 3 Top View C B 1 CLASSIFICATION OF hFE 1 2 2 K E Product-Rank 2SC4098-N 2SC4098-P 2SC4098-Q D Range 56 120 82 180 120 270 H J F G Marking
2sc4081.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC4081 TRANSISTOR (NPN) FEATURES 1. BASE 2. EMITTER Excellent hFE linearity 3. COLLECTOR Complements the 2A1576A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO
2sc4054.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4054 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-
2sc4053.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4053 DESCRIPTION With TO-220C package High voltage,High speed switching High reliability PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Colle
2sc4026.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4026 DESCRIPTION With TO-220Fa package High breakdown voltage High speed switching Wide area of safe operation (SOA) APPLICATIONS For high breakdown voltage high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolu
2sc4056.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4056 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-
2sc4057.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4057 DESCRIPTION With TO-247 package High voltage;high speed Switching power transistor PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collecto
2sc4055.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4055 DESCRIPTION With TO-220C package High voltage,High speed switching High reliability PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V V
2sc4052.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4052 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-
2sc4029.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4029 DESCRIPTION With TO-3PL package Complement to type 2SA1553 APPLICATIONS Power amplifier applications Recommended for 120W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3
2sc4060.pdf
Product Specification Silicon NPN Power Transistor 2SC4060 DESCRIPTION High Collector-Emitter Sustaining Voltage- VCEO(SUS)= 450V(Min) High Switching Speed High Reliability APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Colle
2sc4058.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4058 DESCRIPTION With TO-247 package High voltage;high speed Switching power transistor PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collecto
2sc4004.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4004 DESCRIPTION With TO-220Fa package Satisfactory linearity of foward current transfer ratio hFE Wide area of safe operation (ASO) High-speed switching High collector to base voltage VCBO APPLICATIONS For high breakdown voltage high-speed switching PINNING PIN DESCRIPTION 1 Base 2 Collec
2sc4020.pdf
2SC4020 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-25(TO220) Symbol 2SC4020 Symbol Conditions 2SC4020 Unit Unit 0.2 4.8 0.2 10.2 0.1 2.0 VCBO 900 ICBO VCB=800V 100max A V VCEO 800 IEB
2sc4064.pdf
LOW VCE (sat) 2SC4064 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1567) Application DC Motor Driver and General Purpose External Dimensions FM20(TO220F) (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics Symbol 2SC4064 Unit Symbol Conditions 2SC4064 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 50 V ICBO VCB=50V 100max A VCEO 50 V IEBO VEB
2sc4065.pdf
C Equivalent circuit B Built-in Diode at C E Low VCE (sat) 2SC4065 (400 ) E Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1568) Application DC Motor Driver and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Symbol 2SC4065 Unit Conditions 2SC4065 Unit 0.2 4.2 0.2 10.
2sc4073.pdf
2SC4073 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4073 Unit Symbol Conditions 2SC4073 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 500 V VCB=500V 100max A ICBO
2sc4024.pdf
High hFE LOW VCE (sat) 2SC4024 Silicon NPN Epitaxial Planar Transistor Application DC-DC Converter, Emergency Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol Conditions 2SC4024 Symbol 2SC4024 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 ICBO VCB=100V 10max VCBO 100 V A IEBO VE
2sc4097.pdf
2SC4097 TRANSISTOR (NPN) SOT-323 3 FEATURES High ICMax. ICMax=0.5A 1 Low VCE(sat).Optimal for low voltage operation. 2 Complements the 2SA1577 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collec
2sc4081.pdf
2SC4081 TRANSISTOR (NPN) SOT-323 FEATURES Excellent hFE linearity Complements the 2A1576A 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipat
2sc4098.pdf
2 SC4098 TRANSISTOR (NPN) FEATURES SOT 323 Low Collector Capacitance High Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO 1. BASE V Collector-Emitter Voltage 25 V 2. EMITTER CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO I Collector Current 50 mA C P Collector Power Dissipation 200 m
2sc4097 sot-323.pdf
2SC4097 SOT-323 Transistor(NPN) 1. BASE SOT-323 2. EMITTER 3. COLLECTOR Features High ICMax. ICMax=0.5A Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1577 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V Dimensions in inches and (millimeters) VEBO
2sc4081 sot-323.pdf
2SC4081 SOT-323 Transistor(NPN) 1. BASE SOT-323 2. EMITTER 3. COLLECTOR Features Excellent hFE linearity Complements the 2A1576A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current
2sc4003.pdf
2SC4003(NPN) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High hFE hFE=60 to 200 low VCE(sat) VCE(sat)=0.6V MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continu
2sc4081.pdf
2SC4081 General Purpose Transistor COLLECTOR 3 3 NPN Silicon P b Lead(Pb)-Free 1 1 2 BASE 2 FEATURES SOT-323(SC-70) EMITTER Excellent hFE linearity Complements the 2A1576A MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO V 50 7 V Emitter-Base Voltage VEBO Collector Current -C
2sc4083.pdf
2SC4083 NPN Silicon Transistor 3 P b Lead(Pb)-Free 1 2 1. BASE FEATURES 2. EMITTER 3. COLLECTOR * Radio frequency amplifier * High transition frequency SOT-323(SC-70) * High gain with low collector-to base time constant * Low noise (NF) * Marking 1D ( T =25 C unless otherwise noted) Maximum Ratings A Rating Symbol Value Unit VCBO Collector-Base Voltage 20 V VCEO Collecto
2sc4081xt1.pdf
FM120-M WILLAS THRU 2SC4081xT1 SOT-323 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers TRANSISTOR (NPN) better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted appli
2sc4081w.pdf
2SC4081W(BR3DG4081W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 NPN Silicon NPN transistor in a SOT-323 Plastic Package. / Features Low Cob. / Applications General amplifier. / Equivalent Circuit / Pinning 3 2 1 PIN1 Emit
st2sc4073u.pdf
ST 2SC4073U NPN Silicon Epitaxial Planar Transistor General purpose amplifier and high voltage application Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 120 V Collector Emitter Voltage VCEO 120 V Emitter Base Voltage VEBO 6 V Collector Current IC 1 A Peak Collector Current (Single pulse, tp = 300 s) ICP 2 A 0.5 Ptot W T
l2sc4081qt1g l2sc4081rt1g l2sc4081st1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
l2sc4083pt1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier L2SC4083NT1G Transistor Series We declare that the material of product compliance with RoHS requirements. S-L2SC4083NT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering Information Device Marking Shipping L2SC4083NT1G 3000
l2sc4083nwt1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083NWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083NWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083NWT1G
l2sc4081qt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
l2sc4081qt1g l2sc4081qt3g l2sc4081rt1g l2sc4081rt3g l2sc4081st1g l2sc4081st3g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
l2sc4083pwt1g l2sc4083pwt1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083PWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083PWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083PWT1G
l2sc4081st1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
l2sc4083qwt1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083QWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083QWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083QWT1G
l2sc4081rt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
l2sc4083pwt1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083PWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083PWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083PWT1G
2sc4050.pdf
SMD Type Transistors NPN Transistors 2SC4050 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=100mA 1 2 Collector Emitter Voltage VCEO=120V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Co
2sc4080.pdf
SMD Type Transistors NPN Transistors 2SC4080 1.70 0.1 Features High fT. High breakdown voltage. Complementary to 2SA1575 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 200 Collector - Emitter Voltage VCEO 200 V Emitter - Base Voltage VEBO 4 Collector Curren
2sc4097.pdf
SMD Type Transistors NPN Transistors 2SC4097 Features High ICMax.ICMax. = 0.5A Low VCE(sat). Complementary to 2SA1577 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 32 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 0.5 A
2sc4081.pdf
SMD Type Transistors NPN Transistors 2SC4081 Features Low Cob. Cob=2.0pF (Typ.) Complementary to 2SA1576A 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 7 Collector Current - Continuous IC 150 mA Collector Power D
2sc4097gp.pdf
CHENMKO ENTERPRISE CO.,LTD 2SC4097GP SURFACE MOUNT Medium Power NPN Transistor VOLTAGE 32 Volts CURRENT 0.5 Ampere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. (SC-70/SOT-323) SC-70/SOT-323 * Low saturation voltage V * Low cob. Cob=6.0pF(Typ.) CE(sat)=0.4V(max.)(IC=500mA) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability
2sc4083pwt1g.pdf
2SC4083PWT1G o Absolute maximum ratings (Ta=25 C) Symbol Limits Unit Parameter 3 COLLECTOR Collector-base voltage VCBO 20 V VCEO 11 V Collector-emitter voltage 1 Emitter-base voltage VEBO 3 V BASE Collector current IC 50 mA Collector power dissipation PC 0.15 W 2 o Junction temperature EMITTER T 150 C j o Storage temperature Tstg - 55 +150 C Ordering Information D
2sc4064.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC4064 DESCRIPTION Low Collector Saturation Voltage V = 0.35V(Max)@ I =6A CE(sat) C Collector-Emitter Breakdown Voltage- V = 50V (Min) (BR)CEO Complement to Type 2SA1567 APPLICATIONS Designed for use in DC motor driver and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER V
2sc4007.pdf
isc Silicon NPN Power Transistor 2SC4007 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SA1634 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose a
2sc4054.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4054 DESCRIPTION With ITO-220 package Switching power transistor High voltage ,high speed PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltag
2sc4053.pdf
isc Silicon NPN Power Transistors 2SC4053 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU
2sc4026.pdf
isc Silicon NPN Power Transistor 2SC4026 DESCRIPTION Collector-Base Breakdown Voltage- V = 500V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT
2sc4056.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4056 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO C
2sc4057.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4057 DESCRIPTION With TO-247 package High voltage;high speed Switching power transistor PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE U
2sc4020.pdf
isc Silicon NPN Power Transistor 2SC4020 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 0.7A CE(sat) C Collector-Emitter Breakdown Voltage- V = 800V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed switching regulator and general purpose applications. ABSOLUTE
2sc4055.pdf
isc Silicon NPN Power Transistors 2SC4055 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU
2sc4064.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4064 DESCRIPTION Low Collector Saturation Voltage VCE(sat)= 0.35V(Max)@ IC=6A Collector-Emitter Breakdown Voltage- V(BR)CEO= 50V (Min) Complement to Type 2SA1567 APPLICATIONS Designed for use in DC motor driver and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25
2sc4052.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4052 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO C
2sc4029.pdf
isc Silicon NPN Power Transistor 2SC4029 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Complement to Type 2SA1553 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 120W high fidelity audio frequency ampl
2sc4003.pdf
isc Silicon NPN Power Transistor 2SC4003 DESCRIPTION High h FE Low collector-to-emitter saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 400 V CBO V Collector-Emitter
2sc4073.pdf
isc Silicon NPN Power Transistor 2SC4073 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-
2sc4059.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4059 DESCRIPTION With TO-247 package High voltage;high speed Switching power transistor PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE U
2sc4001.pdf
isc Silicon NPN Power Transistor 2SC4001 DESCRIPTION The 2SC4001is designed for uses of high-resolution monitor TV applications.This makes it possible to raise the video band Of high-resolution monitor TVs to 50MHz. Minimum Lot-to-Lot variations for robust device performance and reliable operation FEATURES Collector Emitter Sustaining Voltage- V = 300 V(Min) CBO Complemen
2sc4008.pdf
isc Silicon NPN Power Transistor 2SC4008 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SA1635 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose a
2sc4060.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4060 DESCRIPTION With TO-247 package Switching power transistor High voltage,high speed PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE U
2sc4058.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4058 DESCRIPTION With TO-247 package High voltage;high speed Switching power transistor PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE U
2sc4024.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4024 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS DC-DC converter,Emergency lighting Inverter and general purpose ABSOLUTE MAXIMUM RATINGS(T =25 )
2sc4051.pdf
isc Silicon NPN Power Transistors 2SC4051 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU
2sc4027.pdf
isc Silicon NPN Power Transistor 2SC4027 DESCRIPTION High voltage and large current capacity Ultrahigh-speed switching Small and slim package permitting 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SA1552 APPLICATIONS Converters , inverters and color TV audio output ABSOLUTE MAXIMUM RATINGS(T
2sc4075.pdf
isc Silicon NPN Power Transistor 2SC4075 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV chroma output, sound output and B/W TV video output, audio output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
2sc4004.pdf
isc Silicon NPN Power Transistor 2SC4004 DESCRIPTION Collector-Base Breakdown Voltage- V = 900V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT
Другие транзисторы: 2SC3993M, 2SC3994, 2SC3995, 2SC3996, 2SC3997, 2SC3998, 2SC3999, 2SC39A, S8050, 2SC400, 2SC4000, 2SC4001, 2SC4002, 2SC4003, 2SC4004, 2SC4005, 2SC4006
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