2SC4005 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4005
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15 W
Tensión colector-base (Vcb): 42 V
Tensión colector-emisor (Vce): 42 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 180 MHz
Ganancia de corriente contínua (hfe): 4000
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar 2SC4005
2SC4005 Datasheet (PDF)
2sc4005.pdf
Ordering number:EN2271ANPN Planar Type Silicon Darlington Transistor2SC4005Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2041A[2SC4005]4.510.0Features2.83.2 High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 50 8
2sc4003.pdf
Ordering number:EN2959ANPN Triple Diffused Planar Silicon Transistor2SC4003High-Voltage Driver ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Adoption of MBIT process.2045B Excellent hFE linearity.[2SC4003]1 : Base2 : Collector3 : Emitter4 : CollectorSANYO : TPunit:mm2044B[2SC4003]1 : Base2 : Collector3 : Emitter4 : Co
2sc4006.pdf
Ordering number:EN2272ANPN Planar Type Silicon Darlington Transistor2SC4006Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2041A[2SC4006]4.510.0Features2.83.2 High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 50 8
2sc4002.pdf
Ordering number:EN2960NPN Triple Diffused Planar Silicon Transistor2SC4002High-Voltage Driver ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Adoption of MBIT process.2003B Excellent hFE linearity.[2SC4002]5.04.04.00.450.50.440.451 : Emitter2 : Collector3 : Base1 2 3SANYO : NPJEDEC : TO-921.3 1.3EIAJ : SC-43Spec
2sc4004.pdf
Power Transistors2SC4004Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh-speed switchingHigh collector to base voltage VCBO 3.1 0.1Wide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to th
2sc4004.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4004 DESCRIPTION With TO-220Fa package Satisfactory linearity of foward current transfer ratio hFE Wide area of safe operation (ASO) High-speed switching High collector to base voltage VCBO APPLICATIONS For high breakdown voltage high-speed switching PINNING PIN DESCRIPTION1 Base 2 Collec
2sc4003.pdf
2SC4003(NPN) TO-251/TO-252-2L TransistorTO-2511. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High hFE hFE=60 to 200 low VCE(sat) VCE(sat)=0.6V MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2LSymbol Parameter Value UnitsVCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continu
2sc4007.pdf
isc Silicon NPN Power Transistor 2SC4007DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SA1634Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose a
2sc4003.pdf
isc Silicon NPN Power Transistor 2SC4003DESCRIPTIONHigh hFELow collector-to-emitter saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 400 VCBOV Collector-Emitter
2sc4001.pdf
isc Silicon NPN Power Transistor 2SC4001DESCRIPTIONThe 2SC4001is designed for uses of high-resolution monitorTV applications.This makes it possible to raise the video bandOf high-resolution monitor TVs to 50MHz.Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationFEATURESCollectorEmitter Sustaining Voltage-: V = 300 V(Min)CBOComplemen
2sc4008.pdf
isc Silicon NPN Power Transistor 2SC4008DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SA1635Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose a
2sc4004.pdf
isc Silicon NPN Power Transistor 2SC4004DESCRIPTION Collector-Base Breakdown Voltage-: V = 900V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
