Справочник транзисторов. 2SC4005

 

Биполярный транзистор 2SC4005 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC4005
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 42 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 42 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 2 A
   Предельная температура PN-перехода (Tj): 175 °C
   Граничная частота коэффициента передачи тока (ft): 180 MHz
   Статический коэффициент передачи тока (hfe): 4000
   Корпус транзистора: TO220

 Аналоги (замена) для 2SC4005

 

 

2SC4005 Datasheet (PDF)

 ..1. Size:86K  sanyo
2sc4005.pdf

2SC4005
2SC4005

Ordering number:EN2271ANPN Planar Type Silicon Darlington Transistor2SC4005Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2041A[2SC4005]4.510.0Features2.83.2 High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 50 8

 8.1. Size:124K  1
2sc4000.pdf

2SC4005
2SC4005

 8.2. Size:79K  sanyo
2sc4003.pdf

2SC4005
2SC4005

Ordering number:EN2959ANPN Triple Diffused Planar Silicon Transistor2SC4003High-Voltage Driver ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Adoption of MBIT process.2045B Excellent hFE linearity.[2SC4003]1 : Base2 : Collector3 : Emitter4 : CollectorSANYO : TPunit:mm2044B[2SC4003]1 : Base2 : Collector3 : Emitter4 : Co

 8.3. Size:79K  sanyo
2sc4006.pdf

2SC4005
2SC4005

Ordering number:EN2272ANPN Planar Type Silicon Darlington Transistor2SC4006Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2041A[2SC4006]4.510.0Features2.83.2 High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 50 8

 8.4. Size:77K  sanyo
2sc4002.pdf

2SC4005
2SC4005

Ordering number:EN2960NPN Triple Diffused Planar Silicon Transistor2SC4002High-Voltage Driver ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Adoption of MBIT process.2003B Excellent hFE linearity.[2SC4002]5.04.04.00.450.50.440.451 : Emitter2 : Collector3 : Base1 2 3SANYO : NPJEDEC : TO-921.3 1.3EIAJ : SC-43Spec

 8.5. Size:130K  nec
2sc4001.pdf

2SC4005
2SC4005

 8.6. Size:59K  panasonic
2sc4004.pdf

2SC4005
2SC4005

Power Transistors2SC4004Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh-speed switchingHigh collector to base voltage VCBO 3.1 0.1Wide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to th

 8.7. Size:156K  jmnic
2sc4004.pdf

2SC4005
2SC4005

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4004 DESCRIPTION With TO-220Fa package Satisfactory linearity of foward current transfer ratio hFE Wide area of safe operation (ASO) High-speed switching High collector to base voltage VCBO APPLICATIONS For high breakdown voltage high-speed switching PINNING PIN DESCRIPTION1 Base 2 Collec

 8.8. Size:197K  lge
2sc4003.pdf

2SC4005
2SC4005

2SC4003(NPN) TO-251/TO-252-2L TransistorTO-2511. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High hFE hFE=60 to 200 low VCE(sat) VCE(sat)=0.6V MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2LSymbol Parameter Value UnitsVCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continu

 8.9. Size:213K  inchange semiconductor
2sc4007.pdf

2SC4005
2SC4005

isc Silicon NPN Power Transistor 2SC4007DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SA1634Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose a

 8.10. Size:251K  inchange semiconductor
2sc4003.pdf

2SC4005
2SC4005

isc Silicon NPN Power Transistor 2SC4003DESCRIPTIONHigh hFELow collector-to-emitter saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 400 VCBOV Collector-Emitter

 8.11. Size:209K  inchange semiconductor
2sc4001.pdf

2SC4005
2SC4005

isc Silicon NPN Power Transistor 2SC4001DESCRIPTIONThe 2SC4001is designed for uses of high-resolution monitorTV applications.This makes it possible to raise the video bandOf high-resolution monitor TVs to 50MHz.Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationFEATURESCollectorEmitter Sustaining Voltage-: V = 300 V(Min)CBOComplemen

 8.12. Size:216K  inchange semiconductor
2sc4008.pdf

2SC4005
2SC4005

isc Silicon NPN Power Transistor 2SC4008DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SA1635Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose a

 8.13. Size:211K  inchange semiconductor
2sc4004.pdf

2SC4005
2SC4005

isc Silicon NPN Power Transistor 2SC4004DESCRIPTION Collector-Base Breakdown Voltage-: V = 900V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT

Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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