2SC4005 Datasheet. Specs and Replacement
Type Designator: 2SC4005 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 42 V
Maximum Collector-Emitter Voltage |Vce|: 42 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 180 MHz
Forward Current Transfer Ratio (hFE), MIN: 4000
Noise Figure, dB: -
Package: TO220
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2SC4005 datasheet
..1. Size:86K sanyo
2sc4005.pdf 
Ordering number EN2271A NPN Planar Type Silicon Darlington Transistor 2SC4005 Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2041A [2SC4005] 4.5 10.0 Features 2.8 3.2 High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 50 8... See More ⇒
8.2. Size:79K sanyo
2sc4003.pdf
Ordering number EN2959A NPN Triple Diffused Planar Silicon Transistor 2SC4003 High-Voltage Driver Applications Features Package Dimensions High breakdown voltage. unit mm Adoption of MBIT process. 2045B Excellent hFE linearity. [2SC4003] 1 Base 2 Collector 3 Emitter 4 Collector SANYO TP unit mm 2044B [2SC4003] 1 Base 2 Collector 3 Emitter 4 Co... See More ⇒
8.3. Size:79K sanyo
2sc4006.pdf
Ordering number EN2272A NPN Planar Type Silicon Darlington Transistor 2SC4006 Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2041A [2SC4006] 4.5 10.0 Features 2.8 3.2 High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 50 8... See More ⇒
8.4. Size:77K sanyo
2sc4002.pdf
Ordering number EN2960 NPN Triple Diffused Planar Silicon Transistor 2SC4002 High-Voltage Driver Applications Features Package Dimensions High breakdown voltage. unit mm Adoption of MBIT process. 2003B Excellent hFE linearity. [2SC4002] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 Emitter 2 Collector 3 Base 1 2 3 SANYO NP JEDEC TO-92 1.3 1.3 EIAJ SC-43 Spec... See More ⇒
8.6. Size:59K panasonic
2sc4004.pdf
Power Transistors 2SC4004 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High-speed switching High collector to base voltage VCBO 3.1 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to th... See More ⇒
8.7. Size:156K jmnic
2sc4004.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4004 DESCRIPTION With TO-220Fa package Satisfactory linearity of foward current transfer ratio hFE Wide area of safe operation (ASO) High-speed switching High collector to base voltage VCBO APPLICATIONS For high breakdown voltage high-speed switching PINNING PIN DESCRIPTION 1 Base 2 Collec... See More ⇒
8.8. Size:197K lge
2sc4003.pdf
2SC4003(NPN) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High hFE hFE=60 to 200 low VCE(sat) VCE(sat)=0.6V MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continu... See More ⇒
8.9. Size:213K inchange semiconductor
2sc4007.pdf
isc Silicon NPN Power Transistor 2SC4007 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SA1634 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose a... See More ⇒
8.10. Size:251K inchange semiconductor
2sc4003.pdf
isc Silicon NPN Power Transistor 2SC4003 DESCRIPTION High h FE Low collector-to-emitter saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 400 V CBO V Collector-Emitter... See More ⇒
8.11. Size:209K inchange semiconductor
2sc4001.pdf
isc Silicon NPN Power Transistor 2SC4001 DESCRIPTION The 2SC4001is designed for uses of high-resolution monitor TV applications.This makes it possible to raise the video band Of high-resolution monitor TVs to 50MHz. Minimum Lot-to-Lot variations for robust device performance and reliable operation FEATURES Collector Emitter Sustaining Voltage- V = 300 V(Min) CBO Complemen... See More ⇒
8.12. Size:216K inchange semiconductor
2sc4008.pdf
isc Silicon NPN Power Transistor 2SC4008 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SA1635 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose a... See More ⇒
8.13. Size:211K inchange semiconductor
2sc4004.pdf
isc Silicon NPN Power Transistor 2SC4004 DESCRIPTION Collector-Base Breakdown Voltage- V = 900V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒
Detailed specifications: 2SC39A, 2SC40, 2SC400, 2SC4000, 2SC4001, 2SC4002, 2SC4003, 2SC4004, D882, 2SC4006, 2SC4007, 2SC4008, 2SC4009, 2SC400D, 2SC400G, 2SC400M, 2SC400O
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