2SC4123 Todos los transistores

 

2SC4123 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC4123

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 800 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 70

Empaquetado / Estuche: TO218

Búsqueda de reemplazo de transistor bipolar 2SC4123

 

2SC4123 Datasheet (PDF)

1.1. 2sc4123.pdf Size:93K _sanyo

2SC4123
2SC4123

Ordering number:EN2956 NPN Triple Diffused Planar Silicon Transistor 2SC4123 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC4123] Adoption of MBIT process. 16.0 5.6 3.4 On-chip damper dio

1.2. 2sc4123.pdf Size:150K _inchange_semiconductor

2SC4123
2SC4123

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4123 DESCRIPTION · ·With TO-3PML package ·High breakdown voltage, high reliability. ·High speed ·Built in damper diode APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and

 4.1. 2sc4125.pdf Size:88K _sanyo

2SC4123
2SC4123

4.2. 2sc4121.pdf Size:89K _sanyo

2SC4123
2SC4123

 4.3. 2sc4124.pdf Size:98K _sanyo

2SC4123
2SC4123

Ordering number:EN2962 NPN Triple Diffused Planar Silicon Transistor 2SC4124 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions Adoption of MBIT process. unit:mm On-chip damper diode. 2039D High breakdown voltage (VCBO=1500V). [2SC4124] High speed (tf=100ns typ). 16.0 5.6 3.4 High reliability (Adoption of HVP proces

4.4. 2sc4126.pdf Size:47K _hitachi

2SC4123
2SC4123

2SC4126 Silicon NPN Epitaxial Application VHF and UHF wide band amplifier Outline MPAK-4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4126 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 2V Collector current IC 50 mA Collector power dissipation PC 150

 4.5. 2sc4125.pdf Size:267K _inchange_semiconductor

2SC4123
2SC4123

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4125 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for very high-definition color display horizontal deflection output applicaitions. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALU

4.6. 2sc4129.pdf Size:227K _inchange_semiconductor

2SC4123
2SC4123

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4129 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Ba

4.7. 2sc4124.pdf Size:138K _inchange_semiconductor

2SC4123
2SC4123

Inchange Semiconductor Product Specification 0Silicon NPN Power Transistors 2SC4124 DESCRIPTION · ·With TO-3PML package ·High breakdown voltage, high reliability. ·High speed ·Built in damper diode APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) an

Otros transistores... 2SC4116 , 2SC4117 , 2SC4118 , 2SC4119 , 2SC412 , 2SC4120 , 2SC4121 , 2SC4122 , BC548 , 2SC4124 , 2SC4125 , 2SC4126 , 2SC4127 , 2SC4128 , 2SC4129 , 2SC413 , 2SC4130 .

 
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