2SC4123 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC4123
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO218
2SC4123 Transistor Equivalent Substitute - Cross-Reference Search
2SC4123 Datasheet (PDF)
1.1. 2sc4123.pdf 
Size:93K _sanyo
Ordering number:EN2956 NPN Triple Diffused Planar Silicon Transistor 2SC4123 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC4123] Adoption of MBIT process. 16.0 5.6 3.4 On-chip damper dio
1.2. 2sc4123.pdf Size:150K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4123 DESCRIPTION · ·With TO-3PML package ·High breakdown voltage, high reliability. ·High speed ·Built in damper diode APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and
4.1. 2sc4125.pdf Size:88K _sanyo
4.2. 2sc4121.pdf Size:89K _sanyo
4.3. 2sc4124.pdf Size:98K _sanyo
Ordering number:EN2962 NPN Triple Diffused Planar Silicon Transistor 2SC4124 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions Adoption of MBIT process. unit:mm On-chip damper diode. 2039D High breakdown voltage (VCBO=1500V). [2SC4124] High speed (tf=100ns typ). 16.0 5.6 3.4 High reliability (Adoption of HVP proces
4.4. 2sc4126.pdf Size:47K _hitachi
2SC4126 Silicon NPN Epitaxial Application VHF and UHF wide band amplifier Outline MPAK-4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4126 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 2V Collector current IC 50 mA Collector power dissipation PC 150
4.5. 2sc4125.pdf Size:267K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4125 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for very high-definition color display horizontal deflection output applicaitions. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALU
4.6. 2sc4129.pdf Size:227K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4129 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Ba
4.7. 2sc4124.pdf Size:138K _inchange_semiconductor
Inchange Semiconductor Product Specification 0Silicon NPN Power Transistors 2SC4124 DESCRIPTION · ·With TO-3PML package ·High breakdown voltage, high reliability. ·High speed ·Built in damper diode APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) an
Datasheet: 2SA1575 , 2SA1575C , 2SA1575D , 2SA1575E , 2SA1575F , 2SA1576 , 2SA1577 , 2SA1578 , BC547 , 2SA1579P , 2SA1579Q , 2SA1579R , 2SA1579S , 2SA1580-3 , 2SA1580-4 , 2SA1580-5 , 2SA1581 .
