Справочник транзисторов. 2SC4123

 

Биполярный транзистор 2SC4123 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC4123

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 60 W

Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V

Макcимальный постоянный ток коллектора (Ic): 7 A

Предельная температура PN-перехода (Tj): 175 °C

Статический коэффициент передачи тока (hfe): 70

Корпус транзистора: TO218

Аналоги (замена) для 2SC4123

 

 

2SC4123 Datasheet (PDF)

1.1. 2sc4123.pdf Size:93K _sanyo

2SC4123
2SC4123

Ordering number:EN2956 NPN Triple Diffused Planar Silicon Transistor 2SC4123 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC4123] Adoption of MBIT process. 16.0 5.6 3.4 On-chip damper dio

1.2. 2sc4123.pdf Size:150K _inchange_semiconductor

2SC4123
2SC4123

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4123 DESCRIPTION · ·With TO-3PML package ·High breakdown voltage, high reliability. ·High speed ·Built in damper diode APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and

 4.1. 2sc4125.pdf Size:88K _sanyo

2SC4123
2SC4123

4.2. 2sc4121.pdf Size:89K _sanyo

2SC4123
2SC4123

 4.3. 2sc4124.pdf Size:98K _sanyo

2SC4123
2SC4123

Ordering number:EN2962 NPN Triple Diffused Planar Silicon Transistor 2SC4124 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions Adoption of MBIT process. unit:mm On-chip damper diode. 2039D High breakdown voltage (VCBO=1500V). [2SC4124] High speed (tf=100ns typ). 16.0 5.6 3.4 High reliability (Adoption of HVP proces

4.4. 2sc4126.pdf Size:47K _hitachi

2SC4123
2SC4123

2SC4126 Silicon NPN Epitaxial Application VHF and UHF wide band amplifier Outline MPAK-4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4126 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 2V Collector current IC 50 mA Collector power dissipation PC 150

 4.5. 2sc4125.pdf Size:267K _inchange_semiconductor

2SC4123
2SC4123

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4125 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for very high-definition color display horizontal deflection output applicaitions. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALU

4.6. 2sc4129.pdf Size:227K _inchange_semiconductor

2SC4123
2SC4123

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4129 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Ba

4.7. 2sc4124.pdf Size:138K _inchange_semiconductor

2SC4123
2SC4123

Inchange Semiconductor Product Specification 0Silicon NPN Power Transistors 2SC4124 DESCRIPTION · ·With TO-3PML package ·High breakdown voltage, high reliability. ·High speed ·Built in damper diode APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) an

Другие транзисторы... 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 , 2N3201 , 2N4401 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2N3208 , 2N3209 , 2N3209AQF .

 

 
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