2SC427 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC427
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 90 MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO18
Búsqueda de reemplazo de transistor bipolar 2SC427
2SC427 Datasheet (PDF)
2sc4270.pdf
Ordering number:EN2971NPN Epitaxial Planar Silicon Transistor2SC4270UHF Converter,Local Oscillator ApplicationsFeatures Package Dimensions Small noise figure : NF=3.0dB typ (f=0.9GHz)unit:mm High power gain : PG=12dB typ (f=0.9GHz)2018B High cutoff frequency : fT=3.0GHz typ[2SC4270]0.40.1630~0.11 0.95 20.951.92.91 : Base2 : Emitter3 : Collect
2sc4272.pdf
Ordering number:EN2970NPN Epitaxial Planar Silicon Transistor2SC427227MHz CB Transceiver Driver ApplicationsFeatures Package Dimensions Small size making it easy to provide high-density,unit:mmsmall-sized hybrid ICs.2038A[2SC4272]4.51.51.60.4 0.53 2 10.41.53.01 : Base0.75 2 : Collector3 : EmitterSANYO : PCP(Bottom view)SpecificationsAbsolute Ma
2sc4271.pdf
Ordering number:EN2710ANPN Epitaxial Planar Silicon Transistor2SC4271High-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Wide-band amplifiers.unit:mm High frequency drivers.2009B[2SC7271]Features High fT (fT=2.2GHz typ) High current (IC=300mA) Adoption of FBET process.1 : EmitterJEDEC : TO-1262 : Collector3 : Bas
2sc4274.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sc4275.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sc4276.pdf
FUJI POWER TRANSISTOR2SC4276TRIPLE DIFFUSED PLANER TYPEHIGH VOLTAGE,HIGH SPEED SWITCHINGOutline DrawingsTO-3PFeaturesHigh voltage,High speed switchingLow saturation voltageHigh reliabilityApplicationsSwitching regulatorsDC-DC convertorJEDEC -Solid state relay EIAJ SC-65General purpose power amplifiersMaximum ratings and characteristicsAbsolute maximum ratings
2sc4278.pdf
Power Transistors www.jmnic.com 2SC4278 Silicon NPN Transistors B C E Features With TO-247 package Complement to type 2SA1633 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 150 V VCER Emitter to base voltage VEB Emitter to base voltage 5 V IB Base Current IC Collector current-Contin
2sc4270.pdf
SMD Type TransistorsNPN Transistors2SC4270SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=15V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collect
2sc4272.pdf
SMD Type TransistorsNPN Transistors2SC42721.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=45V0.42 0.10.46 0.1 Small Size Making It Easy To Provide High-Density, To Provide High-Density,1.Base 27MHz CB Transceiver Driver Applications2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Ra
2sc4274.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4274DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Switching SpeedLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converterSolid state re
2sc4273.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4273DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Switching SpeedHigh ReliabilityLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC convert
2sc4278.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4278 DESCRIPTION With TO-247 package Complement to type 2SA1633 High current and high power capability APPLICATIONS For audio output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 EmitterAbsolut
2sc4275.pdf
isc Silicon NPN Power Transistor 2SC4275DESCRIPTIONLow saturation voltageHigh Switching SpeedHigh reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsHigh speed DC-DC converter applicationsSolid state relayGeneral purpose power amplifiersABSOLUTE MAXIMUM RATIN
2sc4276.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4276 DESCRIPTION With TO-3PN package High voltage ,high speed Low collector saturation voltage High reliability APPLICATIONS Switching regulators DC-DC convertor Solid state relay General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 m
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: LDTB113EET1G | 2N3081-51
History: LDTB113EET1G | 2N3081-51
Liste
Recientemente añadidas las descripciónes de los transistores:
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