2SC427 datasheet, аналоги, основные параметры
Наименование производителя: 2SC427 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 90 MHz
Статический коэффициент передачи тока (hFE): 40
Корпус транзистора: TO18
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Аналоги (замена) для 2SC427
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2SC427 даташит
0.1. Size:106K sanyo
2sc4270.pdf 
Ordering number EN2971 NPN Epitaxial Planar Silicon Transistor 2SC4270 UHF Converter, Local Oscillator Applications Features Package Dimensions Small noise figure NF=3.0dB typ (f=0.9GHz) unit mm High power gain PG=12dB typ (f=0.9GHz) 2018B High cutoff frequency fT=3.0GHz typ [2SC4270] 0.4 0.16 3 0 0.1 1 0.95 2 0.95 1.9 2.9 1 Base 2 Emitter 3 Collect
0.2. Size:94K sanyo
2sc4272.pdf 
Ordering number EN2970 NPN Epitaxial Planar Silicon Transistor 2SC4272 27MHz CB Transceiver Driver Applications Features Package Dimensions Small size making it easy to provide high-density, unit mm small-sized hybrid ICs. 2038A [2SC4272] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Base 0.75 2 Collector 3 Emitter SANYO PCP (Bottom view) Specifications Absolute Ma
0.3. Size:78K sanyo
2sc4271.pdf 
Ordering number EN2710A NPN Epitaxial Planar Silicon Transistor 2SC4271 High-Definition CRT Display Video Output Applications Applications Package Dimensions Wide-band amplifiers. unit mm High frequency drivers. 2009B [2SC7271] Features High fT (fT=2.2GHz typ) High current (IC=300mA) Adoption of FBET process. 1 Emitter JEDEC TO-126 2 Collector 3 Bas
0.4. Size:116K fuji
2sc4274.pdf 
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
0.6. Size:113K fuji
2sc4275.pdf 
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
0.7. Size:111K fuji
2sc4276.pdf 
FUJI POWER TRANSISTOR 2SC4276 TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching Low saturation voltage High reliability Applications Switching regulators DC-DC convertor JEDEC - Solid state relay EIAJ SC-65 General purpose power amplifiers Maximum ratings and characteristics Absolute maximum ratings
0.8. Size:121K jmnic
2sc4278.pdf 
Power Transistors www.jmnic.com 2SC4278 Silicon NPN Transistors B C E Features With TO-247 package Complement to type 2SA1633 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 150 V VCER Emitter to base voltage VEB Emitter to base voltage 5 V IB Base Current IC Collector current-Contin
0.9. Size:1208K kexin
2sc4270.pdf 
SMD Type Transistors NPN Transistors 2SC4270 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collect
0.10. Size:1285K kexin
2sc4272.pdf 
SMD Type Transistors NPN Transistors 2SC4272 1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=45V 0.42 0.1 0.46 0.1 Small Size Making It Easy To Provide High-Density, To Provide High-Density, 1.Base 27MHz CB Transceiver Driver Applications 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Ra
0.11. Size:183K inchange semiconductor
2sc4274.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4274 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC converter Solid state re
0.12. Size:185K inchange semiconductor
2sc4273.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4273 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed High Reliability Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC convert
0.13. Size:126K inchange semiconductor
2sc4278.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4278 DESCRIPTION With TO-247 package Complement to type 2SA1633 High current and high power capability APPLICATIONS For audio output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolut
0.14. Size:216K inchange semiconductor
2sc4275.pdf 
isc Silicon NPN Power Transistor 2SC4275 DESCRIPTION Low saturation voltage High Switching Speed High reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators High speed DC-DC converter applications Solid state relay General purpose power amplifiers ABSOLUTE MAXIMUM RATIN
0.15. Size:150K inchange semiconductor
2sc4276.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4276 DESCRIPTION With TO-3PN package High voltage ,high speed Low collector saturation voltage High reliability APPLICATIONS Switching regulators DC-DC convertor Solid state relay General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 m
Другие транзисторы: 2SC4260, 2SC4261, 2SC4262, 2SC4263, 2SC4264, 2SC4265, 2SC4266, 2SC4269, BD222, 2SC4270, 2SC4271, 2SC4272, 2SC4272D, 2SC4272E, 2SC4272F, 2SC4273, 2SC4274
