2SC4559 Datasheet. Equivalente

 ..1. Size:59K  panasonic
 2sc4559.pdf

Power Transistors 2SC4559 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High collector to emitter VCEO 3.1 0.1 High-speed switching Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 Absolute Maximum Ratings (TC=25 C) +0.2 0.5

 ..2. Size:186K  inchange semiconductor
 2sc4559.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4559 DESCRIPTION Collector-Base Breakdown Voltage- V = 500V(Min.) (BR)CBO High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PAR

 8.1. Size:124K  sanyo
 2sc4555.pdf

Ordering number EN3187 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1745/2SC4555 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Very small-sized package permitting the 2SA1745/ unit mm 2SC4555-applied set to be made small and slim. 2059 Low collector-to-emitter saturation voltage. [2SA1745/2SC4555] B Base C Collector E Emitter ( )

 8.2. Size:161K  nec
 2sc4552.pdf

DATA SHEET SILICON POWER TRANSISTOR 2SC4552 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4552 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT mm) switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation type package contribu

 8.3. Size:135K  nec
 2sc4550.pdf

DATA SHEET SILICON POWER TRANSISTOR 2SC4550 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT mm) switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation type package contribu

 8.4. Size:111K  nec
 2sc4554.pdf

DATA SHEET SILICON POWER TRANSISTOR 2SC4554 NPN SILICON EPITAXIAL TRANSISTOR FOR SWITCHING The 2SC4554 is a power transistor designed especially for low PACKAGE DRAWING (UNIT mm) collector saturation voltage and features large current switching at a low power dissipation. In addition, a high hFE enables alleviation of the driver load. FEATURES High hFE and low VCE(sat) hFE

 8.5. Size:140K  nec
 2sc4551.pdf

DATA SHEET SILICON POWER TRANSISTOR 2SC4551 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4551 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT mm) switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation type package contribu

 8.6. Size:126K  nec
 2sc4553.pdf

DATA SHEET SILICON POWER TRANSISTOR 2SC4553 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4553 is a power transistor designed especially for low PACKAGE DRAWING (UNIT mm) collector saturation voltage and features large current switching at a low power dissipation. In addition, a high hFE enables alleviation of the driver load. FEATURES High hFE and low VCE(sat)

 8.7. Size:86K  no
 2sc4554.pdf

 8.8. Size:25K  sanken-ele
 2sc4557.pdf

2SC4557 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4557 Symbol Conditions 2SC4557 Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 900 ICBO VCB=800V 100max A V VCEO 550 IE

 8.9. Size:1328K  kexin
 2sc4555.pdf

SMD Type Transistors NPN Transistors 2SC4555 Features Low collector-to-emitter saturation voltage. Complementary to 2SA1745 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 15 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 500 mA

 8.10. Size:1279K  cn sps
 2sc4552t2tl.pdf

2SC4552T2TL Silicon NPN Power Transistor DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = 2V, I = 3A) FE CE C Low Saturation Voltage- V = 0.3V(Max)@ (I = 8A, I = 0.4A) CE(sat) C B APPLICATIONS Designed for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

 8.11. Size:172K  cn sptech
 2sc4550m 2sc4550l 2sc4550k.pdf

SPTECH Product Specification isc Silicon NPN Power Transistor 2SC4550 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = 2V , I = 1.5A) FE CE C Low Saturation Voltage- V = 0.3V(Max)@ (I = 4A, I = 0.2A) CE(sat) C B APPLICATIONS Designed for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMU

 8.12. Size:310K  cn sptech
 2sc4552m 2sc4552l 2sc4552k.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC4552 DESCRIPTION With TO-220F package High hFE and low VCE(sat) APPLICATIONS For high-speed switching For use in drivers such as DC-DC converters and actuators. PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 )

 8.13. Size:213K  inchange semiconductor
 2sc4552.pdf

isc Silicon NPN Power Transistor 2SC4552 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = 2V, I = 3A) FE CE C Low Saturation Voltage- V = 0.3V(Max)@ (I = 8A, I = 0.4A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as a drive

 8.14. Size:212K  inchange semiconductor
 2sc4550.pdf

isc Silicon NPN Power Transistor 2SC4550 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = 2V , I = 1.5A) FE CE C Low Saturation Voltage- V = 0.3V(Max)@ (I = 4A, I = 0.2A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as a dr

 8.15. Size:189K  inchange semiconductor
 2sc4557.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4557 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 550V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applicatio