2SC4559 - Даташиты. Аналоги. Основные параметры

Power Transistors 2SC4559 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High collector to emitter VCEO 3.1 0.1 High-speed switching Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 Absolute Maximum Ratings (TC=25 C) +0.2 0.5

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4559 DESCRIPTION Collector-Base Breakdown Voltage- V = 500V(Min.) (BR)CBO High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PAR

Ordering number EN3187 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1745/2SC4555 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Very small-sized package permitting the 2SA1745/ unit mm 2SC4555-applied set to be made small and slim. 2059 Low collector-to-emitter saturation voltage. [2SA1745/2SC4555] B Base C Collector E Emitter ( )

DATA SHEET SILICON POWER TRANSISTOR 2SC4552 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4552 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT mm) switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation type package contribu

DATA SHEET SILICON POWER TRANSISTOR 2SC4550 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT mm) switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation type package contribu

DATA SHEET SILICON POWER TRANSISTOR 2SC4554 NPN SILICON EPITAXIAL TRANSISTOR FOR SWITCHING The 2SC4554 is a power transistor designed especially for low PACKAGE DRAWING (UNIT mm) collector saturation voltage and features large current switching at a low power dissipation. In addition, a high hFE enables alleviation of the driver load. FEATURES High hFE and low VCE(sat) hFE

DATA SHEET SILICON POWER TRANSISTOR 2SC4551 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4551 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT mm) switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation type package contribu

DATA SHEET SILICON POWER TRANSISTOR 2SC4553 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4553 is a power transistor designed especially for low PACKAGE DRAWING (UNIT mm) collector saturation voltage and features large current switching at a low power dissipation. In addition, a high hFE enables alleviation of the driver load. FEATURES High hFE and low VCE(sat)

2SC4557 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4557 Symbol Conditions 2SC4557 Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 900 ICBO VCB=800V 100max A V VCEO 550 IE

SMD Type Transistors NPN Transistors 2SC4555 Features Low collector-to-emitter saturation voltage. Complementary to 2SA1745 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 15 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 500 mA

2SC4552T2TL Silicon NPN Power Transistor DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = 2V, I = 3A) FE CE C Low Saturation Voltage- V = 0.3V(Max)@ (I = 8A, I = 0.4A) CE(sat) C B APPLICATIONS Designed for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

SPTECH Product Specification isc Silicon NPN Power Transistor 2SC4550 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = 2V , I = 1.5A) FE CE C Low Saturation Voltage- V = 0.3V(Max)@ (I = 4A, I = 0.2A) CE(sat) C B APPLICATIONS Designed for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMU

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC4552 DESCRIPTION With TO-220F package High hFE and low VCE(sat) APPLICATIONS For high-speed switching For use in drivers such as DC-DC converters and actuators. PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 )

isc Silicon NPN Power Transistor 2SC4552 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = 2V, I = 3A) FE CE C Low Saturation Voltage- V = 0.3V(Max)@ (I = 8A, I = 0.4A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as a drive

isc Silicon NPN Power Transistor 2SC4550 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = 2V , I = 1.5A) FE CE C Low Saturation Voltage- V = 0.3V(Max)@ (I = 4A, I = 0.2A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as a dr

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4557 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 550V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applicatio