2SC4789 Todos los transistores

 

2SC4789 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC4789
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 150 W
   Tensión colector-base (Vcb): 1500 V
   Tensión colector-emisor (Vce): 800 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 25 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO3PL

 Búsqueda de reemplazo de transistor bipolar 2SC4789

 

2SC4789 Datasheet (PDF)

 ..1. Size:20K  hitachi
2sc4789.pdf pdf_icon

2SC4789

 ..2. Size:186K  inchange semiconductor
2sc4789.pdf pdf_icon

2SC4789

isc Product Specification isc Silicon NPN Power Transistor 2SC4789 DESCRIPTION Silicon NPN triple diffused High Switching Speed High Breakdown Voltage High speed switching time 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Character display horizontal deffection output Suitable for large size CRT

 8.1. Size:120K  toshiba
2sc4781.pdf pdf_icon

2SC4789

 8.2. Size:37K  nec
2sc4783.pdf pdf_icon

2SC4789

DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR 2SC4783 NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SC4783 is NPN silicon epitaxial transistor. 0.3 0.05 0.1+0.1 0.05 FEATURES High DC current gain hFE2 = 200 TYP. High voltage VCEO = 50 V 3 0 to 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 2 1 Collector to Base Voltage VCBO 60 V 0.2+0.1

Otros transistores... 2SC4762 , 2SC4763 , 2SC4764 , 2SC4765 , 2SC4766 , 2SC477 , 2SC478 , 2SC4781 , 8050 , 2SC479 , 2SC4793 , 2SC4796 , 2SC4797 , 2SC479H , 2SC48 , 2SC480 , 2SC4806 .

History: KT986G | CHDTC115GKGP | NSP598 | 2SC4675 | NSS40600CF8 | NSE171 | MPQ5131

 

 
Back to Top

 


 
.