2SC4789 Datasheet. Specs and Replacement

Type Designator: 2SC4789  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 800 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 25 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO3PL

  📄📄 Copy 

 2SC4789 Substitution

- BJT ⓘ Cross-Reference Search

 

2SC4789 datasheet

 ..1. Size:20K  hitachi

2sc4789.pdf pdf_icon

2SC4789

... See More ⇒

 ..2. Size:186K  inchange semiconductor

2sc4789.pdf pdf_icon

2SC4789

isc Product Specification isc Silicon NPN Power Transistor 2SC4789 DESCRIPTION Silicon NPN triple diffused High Switching Speed High Breakdown Voltage High speed switching time 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Character display horizontal deffection output Suitable for large size CRT... See More ⇒

 8.1. Size:120K  toshiba

2sc4781.pdf pdf_icon

2SC4789

... See More ⇒

 8.2. Size:37K  nec

2sc4783.pdf pdf_icon

2SC4789

DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR 2SC4783 NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SC4783 is NPN silicon epitaxial transistor. 0.3 0.05 0.1+0.1 0.05 FEATURES High DC current gain hFE2 = 200 TYP. High voltage VCEO = 50 V 3 0 to 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 2 1 Collector to Base Voltage VCBO 60 V 0.2+0.1 ... See More ⇒

Detailed specifications: 2SC4762, 2SC4763, 2SC4764, 2SC4765, 2SC4766, 2SC477, 2SC478, 2SC4781, 8050, 2SC479, 2SC4793, 2SC4796, 2SC4797, 2SC479H, 2SC48, 2SC480, 2SC4806

Keywords - 2SC4789 pdf specs

 2SC4789 cross reference

 2SC4789 equivalent finder

 2SC4789 pdf lookup

 2SC4789 substitution

 2SC4789 replacement