2SC5132A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5132A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 1500 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO3PFM
Búsqueda de reemplazo de transistor bipolar 2SC5132A
2SC5132A Datasheet (PDF)
2sc5132.pdf
2SC5132ASilicon NPN Triple Diffused PlanarApplicationTO3PFM (N)Character display horizontal deflection outputFeatures High breakdown voltageVCES = 1500 V, IC = 8 A Builtin damper diode type Isolated packageCTO-3PFMB1. Base2. Collector13. Emitter23EAbsolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Unit
2sc5136.pdf
2SC5136Silicon NPN EpitaxialADE-208-2231st. EditionApplicationVHF/UHF wide band amplifierFeatures High gain bandwidth productfT = 3.8 GHz typ High gain, low noise figurePG = 11 dB typ, NF = 2.5 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. Collector2SC5136Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base v
2sc5138.pdf
2SC5138Silicon NPN EpitaxialADE-208-225A (Z)2nd. EditionMar. 2001ApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 6 GHz typ High gain, low noise figurePG = 13 dB typ, NF = 1.8 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. CollectorNote: Marking is YL.Attention: This device is very sensitive to ele
2sc5139.pdf
2SC5139Silicon NPN EpitaxialADE-208-2261st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 11 GHz typ High gain, low noise figurePG = 15 dB typ, NF = 1.1 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. Collector2SC5139Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base
2sc5137.pdf
2SC5137Silicon NPN EpitaxialADE-208-2241st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 10 GHz typ High gain, low noise figurePG = 16.5 dB typ, NF = 1.5 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. Collector2SC5137Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to bas
2sc5130.pdf
2SC5130Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC5130 Unit Symbol Conditions 2SC5130 Unit0.24.20.210.1c0.5VCBO 600 V ICBO VCB=500V 100max A2.8
2sc5130.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5130DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
