All Transistors. 2SC5132A Datasheet

 

2SC5132A Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC5132A

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3PFM

2SC5132A Transistor Equivalent Substitute - Cross-Reference Search

 

2SC5132A Datasheet (PDF)

3.1. 2sc5132.pdf Size:23K _hitachi

2SC5132A
2SC5132A

2SC5132A Silicon NPN Triple Diffused Planar Application TO3PFM (N) Character display horizontal deflection output Features High breakdown voltage VCES = 1500 V, IC = 8 A Builtin damper diode type Isolated package C TO-3PFM B 1. Base 2. Collector 1 3. Emitter 2 3 E Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit

4.1. 2sc5137.pdf Size:58K _hitachi

2SC5132A
2SC5132A

2SC5137 Silicon NPN Epitaxial ADE-208-224 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 10 GHz typ High gain, low noise figure PG = 16.5 dB typ, NF = 1.5 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5137 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltag

4.2. 2sc5139.pdf Size:57K _hitachi

2SC5132A
2SC5132A

2SC5139 Silicon NPN Epitaxial ADE-208-226 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 11 GHz typ High gain, low noise figure PG = 15 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5139 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage

 4.3. 2sc5136.pdf Size:58K _hitachi

2SC5132A
2SC5132A

2SC5136 Silicon NPN Epitaxial ADE-208-223 1st. Edition Application VHF/UHF wide band amplifier Features High gain bandwidth product fT = 3.8 GHz typ High gain, low noise figure PG = 11 dB typ, NF = 2.5 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5136 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage V

4.4. 2sc5138.pdf Size:47K _hitachi

2SC5132A
2SC5132A

2SC5138 Silicon NPN Epitaxial ADE-208-225A (Z) 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 6 GHz typ High gain, low noise figure PG = 13 dB typ, NF = 1.8 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is YL. Attention: This device is very sensitive to electro static d

 4.5. 2sc5130.pdf Size:24K _sanken-ele

2SC5132A

2SC5130 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) Symbol 2SC5130 Unit Symbol Conditions 2SC5130 Unit 0.2 4.2 0.2 10.1 c0.5 VCBO 600 V ICBO VCB=500V 100max A 2.8 VCEO 400

4.6. 2sc5130.pdf Size:109K _inchange_semiconductor

2SC5132A
2SC5132A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5130 DESCRIPTION ·With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PA

Datasheet: 2SC511O , 2SC511R , 2SC512 , 2SC5120 , 2SC512O , 2SC512R , 2SC513 , 2SC5130 , 2N3773 , 2SC513O , 2SC513R , 2SC514 , 2SC515 , 2SC515A , 2SC516 , 2SC516A , 2SC516N .

 

 
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