2SC5251 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5251
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 800 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 8
Encapsulados: TO3PFM
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2SC5251 datasheet
2sc5251.pdf
2SC5251 Silicon NPN Triple Diffused Planar Preliminary Application Character display horizontal deflection output Features High breakdown voltage VCBO = 1500 V High speed switching tf = 0.2 sec (typ) Isolated package TO-3P FM (N) Outline TO-3PFM (N) 1. Base 2. Collector 3. Emitter 1 2 3 2SC5251 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Un
2sc5254.pdf
2SC5254 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5254 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 1.5dB (f = 2 GHz) High gain Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 7 V Emitter-base voltage VEBO 1
2sc5255.pdf
2SC5255 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5255 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 1.5dB (f = 2 GHz) High gain Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 7 V Emitter-base voltage VEBO 1
Otros transistores... 2SC523R, 2SC524, 2SC5249, 2SC524M, 2SC524O, 2SC524R, 2SC525, 2SC5250, 431, 2SC525O, 2SC525R, 2SC526, 2SC526M, 2SC527, 2SC5271, 2SC5273, 2SC528
History: BCW86 | MJE15031 | LMUN5130T1G
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