2SC5251 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5251
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 800 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 8
Paquete / Cubierta: TO3PFM
Búsqueda de reemplazo de transistor bipolar 2SC5251
2SC5251 Datasheet (PDF)
2sc5251.pdf
2SC5251Silicon NPN Triple Diffused PlanarPreliminaryApplicationCharacter display horizontal deflection outputFeatures High breakdown voltageVCBO = 1500 V High speed switchingtf = 0.2 sec (typ) Isolated packageTO-3PFM (N)OutlineTO-3PFM (N)1. Base 2. Collector 3. Emitter1232SC5251Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Un
2sc5254.pdf
2SC5254 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5254 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.5dB (f = 2 GHz) High gain: Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 15 VCollector-emitter voltage VCEO 7 VEmitter-base voltage VEBO 1
2sc5255.pdf
2SC5255 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5255 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.5dB (f = 2 GHz) High gain: Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 15 VCollector-emitter voltage VCEO 7 VEmitter-base voltage VEBO 1
2sc5250.pdf
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2sc5252.pdf
2SC5252Silicon NPN Triple Diffused PlanarADE-208-391A (Z)2nd. EditionApplicationCharacter display horizontal deflection outputFeatures High breakdown voltageVCBO = 1500 V High speed switchingtf 0.15 sec(typ.) Isolated packageTO3PFMOutlineTO-3PFM1. Base2. Collector3. Emitter1232SC5252Absolute Maximum Ratings (Ta = 25C)Item Sym
2sc5254.pdf
SMD Type TransistorsNPN Transistors2SC5254SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=40mA Collector Emitter Voltage VCEO=7V1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto
2sc5259.pdf
SMD Type TransistorsNPN Transistors2SC5259SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=15mA1 2 Collector Emitter Voltage VCEO=7V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto
2sc5250.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5250DESCRIPTIONSilicon NPN diffused planar transistorHigh speed switchingBuilt-in damper diode type100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for display horizontal deflection outputSwitching regulator and general purposeAB
2sc5252.pdf
isc Silicon NPN Power Transistor 2SC5252DESCRIPTIONHigh speed switchingHigh breakdown voltageVCBO = 1500 VMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSCharacter display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Vo
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: KSU13003HR
History: KSU13003HR
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