2SC5251 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5251
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 800 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 8
Paquete / Cubierta: TO3PFM
Búsqueda de reemplazo de 2SC5251
2SC5251 Datasheet (PDF)
2sc5251.pdf

2SC5251Silicon NPN Triple Diffused PlanarPreliminaryApplicationCharacter display horizontal deflection outputFeatures High breakdown voltageVCBO = 1500 V High speed switchingtf = 0.2 sec (typ) Isolated packageTO-3PFM (N)OutlineTO-3PFM (N)1. Base 2. Collector 3. Emitter1232SC5251Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Un
2sc5254.pdf

2SC5254 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5254 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.5dB (f = 2 GHz) High gain: Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 15 VCollector-emitter voltage VCEO 7 VEmitter-base voltage VEBO 1
2sc5255.pdf

2SC5255 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5255 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.5dB (f = 2 GHz) High gain: Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 15 VCollector-emitter voltage VCEO 7 VEmitter-base voltage VEBO 1
Otros transistores... 2SC523R , 2SC524 , 2SC5249 , 2SC524M , 2SC524O , 2SC524R , 2SC525 , 2SC5250 , TIP32C , 2SC525O , 2SC525R , 2SC526 , 2SC526M , 2SC527 , 2SC5271 , 2SC5273 , 2SC528 .
History: CSD1563
History: CSD1563



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