2SC5251 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5251
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TO3PFM
2SC5251 Transistor Equivalent Substitute - Cross-Reference Search
2SC5251 Datasheet (PDF)
2sc5251.pdf
2SC5251Silicon NPN Triple Diffused PlanarPreliminaryApplicationCharacter display horizontal deflection outputFeatures High breakdown voltageVCBO = 1500 V High speed switchingtf = 0.2 sec (typ) Isolated packageTO-3PFM (N)OutlineTO-3PFM (N)1. Base 2. Collector 3. Emitter1232SC5251Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Un
2sc5254.pdf
2SC5254 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5254 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.5dB (f = 2 GHz) High gain: Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 15 VCollector-emitter voltage VCEO 7 VEmitter-base voltage VEBO 1
2sc5255.pdf
2SC5255 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5255 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.5dB (f = 2 GHz) High gain: Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 15 VCollector-emitter voltage VCEO 7 VEmitter-base voltage VEBO 1
2sc5250.pdf
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2sc5252.pdf
2SC5252Silicon NPN Triple Diffused PlanarADE-208-391A (Z)2nd. EditionApplicationCharacter display horizontal deflection outputFeatures High breakdown voltageVCBO = 1500 V High speed switchingtf 0.15 sec(typ.) Isolated packageTO3PFMOutlineTO-3PFM1. Base2. Collector3. Emitter1232SC5252Absolute Maximum Ratings (Ta = 25C)Item Sym
2sc5254.pdf
SMD Type TransistorsNPN Transistors2SC5254SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=40mA Collector Emitter Voltage VCEO=7V1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto
2sc5259.pdf
SMD Type TransistorsNPN Transistors2SC5259SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=15mA1 2 Collector Emitter Voltage VCEO=7V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto
2sc5250.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5250DESCRIPTIONSilicon NPN diffused planar transistorHigh speed switchingBuilt-in damper diode type100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for display horizontal deflection outputSwitching regulator and general purposeAB
2sc5252.pdf
isc Silicon NPN Power Transistor 2SC5252DESCRIPTIONHigh speed switchingHigh breakdown voltageVCBO = 1500 VMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSCharacter display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Vo
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
