2SC5273 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

Ordering number : ENA1075 2SC5277ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF to S-Band Low-Noise Amplifier2SC5277AOSC ApplicationsFeatures Low-noise : NF=0.9dB typ (f=1GHz).: NF=1.4dB typ (f=1.5GHz). High gain : S21e2=10dB typ (f=1.5GHz). High cut-off frequency : fT=8GHz typ. Low-voltage, low-current operation (VCE=1V, IC=1

Ordering number:EN5186NPN Epitaxial Planar Silicon Transistor2SC5276UHF to S Band Low-Noise Amplifier,OSC ApplicationsFeatures Package Dimensions Low noise : NF=0.9dB typ (f=1GHz).unit:mm: NF=1.4dB typ (f=1.5GHz).2110A2 High gain : S21e =11dB typ (f=1.5GHz).[2SC5276]1.9 High cutoff frequency : fT=11GHz typ.0.95 0.95 Low-voltage, low-current ope

Ordering number:EN5185NPN Epitaxial Planar Silicon Transistor2SC5275UHF to S Band Low-Noise Amplifier,OSC ApplicationsFeatures Package Dimensions Low noise : NF=0.9dB typ (f=1GHz).unit:mm: NF=1.4dB typ (f=1.5GHz).2018B2 High gain : S21e =10dB typ (f=1.5GHz).[2SC5275] High cutoff frequency : fT=11GHz typ.0.4 Low-voltage, low-current operation0.1

Ordering number:EN5187NPN Epitaxial Planar Silicon Transistor2SC5277UHF to S Band Low-Noise Amplifier,OSC ApplicationsFeatures Package Dimensions Low noise : NF=0.9dB typ (f=1GHz).unit:mm: NF=1.4dB typ (f=1.5GHz).2106A2 High gain : S21e =10dB typ (f=1.5GHz).[2SC5277] High cutoff frequency : fT=11GHz typ.0.750.30.6 Low-voltage, low-current ope

Transistors 2SC5274(96-203-C329)304

Ordering number : ENA1075A2SC5277ARF Transistorhttp://onsemi.com10V, 30mA, fT=8GHz, NPN Single SMCPFeatures Low-noise : NF=0.9dB typ (f=1GHz) : NF=1.4dB typ (f=1.5GHz) High gain 2 : S21e =10dB typ (f=1.5GHz) High cut-off frequency : fT=8GHz typ Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ : S21e =5.5dB typ (f=1.5GHz)

Power Transistors2SC5270, 2SC5270ASilicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=

JMnic Product Specification Silicon NPN Power Transistors 2SC5271 DESCRIPTION With TO-220F package APPLICATIONS For resonant switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-ba

2SC5271Silicon NPN Triple Diffused Planar Transistor Application : Resonant Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC5271 Symbol Conditions 2SC5271 UnitUnit0.24.20.210.1c0.52.8VCBO 300 ICBO VCB=300V 100max AVVCEO 200 IEBO VEB=7V 100max AVVE

isc Silicon NPN Power Transistor 2SC5271DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOLow Saturation Voltage-: V = 1.0V(Max)@ (I = 2.5A, I = 0.5A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for resonant switching regulator and generalpurpose applications.ABSOLUTE MAXIMUM