2SC5273 - описание и поиск аналогов

 ..1. Size:42K  hitachi
 2sc5273.pdf 

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.1. Size:124K  toshiba
 2sc5279.pdf 

 8.2. Size:58K  sanyo
 2sc5277a.pdf 

Ordering number ENA1075 2SC5277A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amplifier 2SC5277A OSC Applications Features Low-noise NF=0.9dB typ (f=1GHz). NF=1.4dB typ (f=1.5GHz). High gain S21e 2=10dB typ (f=1.5GHz). High cut-off frequency fT=8GHz typ. Low-voltage, low-current operation (VCE=1V, IC=1

 8.3. Size:136K  sanyo
 2sc5276.pdf 

Ordering number EN5186 NPN Epitaxial Planar Silicon Transistor 2SC5276 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions Low noise NF=0.9dB typ (f=1GHz). unit mm NF=1.4dB typ (f=1.5GHz). 2110A 2 High gain S21e =11dB typ (f=1.5GHz). [2SC5276] 1.9 High cutoff frequency fT=11GHz typ. 0.95 0.95 Low-voltage, low-current ope

 8.4. Size:136K  sanyo
 2sc5275.pdf 

Ordering number EN5185 NPN Epitaxial Planar Silicon Transistor 2SC5275 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions Low noise NF=0.9dB typ (f=1GHz). unit mm NF=1.4dB typ (f=1.5GHz). 2018B 2 High gain S21e =10dB typ (f=1.5GHz). [2SC5275] High cutoff frequency fT=11GHz typ. 0.4 Low-voltage, low-current operation 0.1

 8.5. Size:134K  sanyo
 2sc5277.pdf 

Ordering number EN5187 NPN Epitaxial Planar Silicon Transistor 2SC5277 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions Low noise NF=0.9dB typ (f=1GHz). unit mm NF=1.4dB typ (f=1.5GHz). 2106A 2 High gain S21e =10dB typ (f=1.5GHz). [2SC5277] High cutoff frequency fT=11GHz typ. 0.75 0.3 0.6 Low-voltage, low-current ope

 8.6. Size:20K  rohm
 2sc5274.pdf 

Transistors 2SC5274 (96-203-C329) 304

 8.7. Size:403K  onsemi
 2sc5277a-2.pdf 

 8.8. Size:35K  panasonic
 2sc5270.pdf 

Power Transistors 2SC5270, 2SC5270A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=

 8.9. Size:169K  jmnic
 2sc5271.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC5271 DESCRIPTION With TO-220F package APPLICATIONS For resonant switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-ba

 8.10. Size:15K  sanken-ele
 2sc5271.pdf 

2SC5271 Silicon NPN Triple Diffused Planar Transistor Application Resonant Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC5271 Symbol Conditions 2SC5271 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 300 ICBO VCB=300V 100max A V VCEO 200 IEBO VEB=7V 100max A V VE

 8.11. Size:211K  inchange semiconductor
 2sc5271.pdf 

isc Silicon NPN Power Transistor 2SC5271 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Low Saturation Voltage- V = 1.0V(Max)@ (I = 2.5A, I = 0.5A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for resonant switching regulator and general purpose applications. ABSOLUTE MAXIMUM