2SC5273 PDF and Equivalents Search

 ..1. Size:42K  hitachi

 2sc5273.pdf

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM... See More ⇒

 8.1. Size:124K  toshiba

 2sc5279.pdf

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 8.2. Size:58K  sanyo

 2sc5277a.pdf

Ordering number ENA1075 2SC5277A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amplifier 2SC5277A OSC Applications Features Low-noise NF=0.9dB typ (f=1GHz). NF=1.4dB typ (f=1.5GHz). High gain S21e 2=10dB typ (f=1.5GHz). High cut-off frequency fT=8GHz typ. Low-voltage, low-current operation (VCE=1V, IC=1... See More ⇒

 8.3. Size:136K  sanyo

 2sc5276.pdf

Ordering number EN5186 NPN Epitaxial Planar Silicon Transistor 2SC5276 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions Low noise NF=0.9dB typ (f=1GHz). unit mm NF=1.4dB typ (f=1.5GHz). 2110A 2 High gain S21e =11dB typ (f=1.5GHz). [2SC5276] 1.9 High cutoff frequency fT=11GHz typ. 0.95 0.95 Low-voltage, low-current ope... See More ⇒

 8.4. Size:136K  sanyo

 2sc5275.pdf

Ordering number EN5185 NPN Epitaxial Planar Silicon Transistor 2SC5275 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions Low noise NF=0.9dB typ (f=1GHz). unit mm NF=1.4dB typ (f=1.5GHz). 2018B 2 High gain S21e =10dB typ (f=1.5GHz). [2SC5275] High cutoff frequency fT=11GHz typ. 0.4 Low-voltage, low-current operation 0.1... See More ⇒

 8.5. Size:134K  sanyo

 2sc5277.pdf

Ordering number EN5187 NPN Epitaxial Planar Silicon Transistor 2SC5277 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions Low noise NF=0.9dB typ (f=1GHz). unit mm NF=1.4dB typ (f=1.5GHz). 2106A 2 High gain S21e =10dB typ (f=1.5GHz). [2SC5277] High cutoff frequency fT=11GHz typ. 0.75 0.3 0.6 Low-voltage, low-current ope... See More ⇒

 8.6. Size:20K  rohm

 2sc5274.pdf

Transistors 2SC5274 (96-203-C329) 304 ... See More ⇒

 8.7. Size:403K  onsemi

 2sc5277a-2.pdf

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 8.8. Size:35K  panasonic

 2sc5270.pdf

Power Transistors 2SC5270, 2SC5270A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=... See More ⇒

 8.9. Size:169K  jmnic

 2sc5271.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC5271 DESCRIPTION With TO-220F package APPLICATIONS For resonant switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-ba... See More ⇒

 8.10. Size:15K  sanken-ele

 2sc5271.pdf

2SC5271 Silicon NPN Triple Diffused Planar Transistor Application Resonant Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC5271 Symbol Conditions 2SC5271 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 300 ICBO VCB=300V 100max A V VCEO 200 IEBO VEB=7V 100max A V VE... See More ⇒

 8.11. Size:211K  inchange semiconductor

 2sc5271.pdf

isc Silicon NPN Power Transistor 2SC5271 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Low Saturation Voltage- V = 1.0V(Max)@ (I = 2.5A, I = 0.5A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for resonant switching regulator and general purpose applications. ABSOLUTE MAXIMUM... See More ⇒