2SC533
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC533
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1
W
Tensión colector-base (Vcb): 30
V
Tensión colector-emisor (Vce): 20
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 115
MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de transistor bipolar 2SC533
2SC533
Datasheet (PDF)
0.1. Size:335K toshiba
2sc5339.pdf 
2SC5339 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5339 HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 5 V (Max.) CE (sat) High Speed : t = 0.2 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mo
0.4. Size:51K nec
2sc5338.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5338NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW DISTORTION AMPLIFIER4-PIN POWER MINIMOLDFEATURES High gain: S21e2 = 10 dB TYP. @ VCE = 5 V, IC = 50 mA, f = 1 GHz Low distortion, low voltage: IM2 = -55 dB TYP., IM3 = -76 dB TYP. @ VCE = 5 V, IC = 50 mA, Vin = 105 dBV/75 4-pin power minimold package with improved gain
0.5. Size:47K nec
2sc5336.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5336NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW DISTORTION AMPLIFIER4-PIN POWER MINIMOLDFEATURES High gain: S21e2 = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz 4-pin power minimold package with improved gain from the 2SC3357ORDERING INFORMATIONPart Number Quantity Supplying Form2SC5336 25 pcs (Non reel) Magazine
0.6. Size:47K nec
2sc5337.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5337NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW DISTORTION AMPLIFIER4-PIN POWER MINIMOLDFEATURES Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA Low noiseNF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHzNF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz 4-pin power minimold package wi
0.7. Size:43K panasonic
2sc5335 e.pdf
Transistor2SC5335(Tentative)Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).0.65 max.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450.052.5 0.5 2.5 0.5Parameter Symbol Ratings Uni
0.8. Size:38K panasonic
2sc5335.pdf
Transistor2SC5335(Tentative)Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).0.65 max.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450.052.5 0.5 2.5 0.5Parameter Symbol Ratings Uni
0.9. Size:78K jmnic
2sc5339.pdf
Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC5339 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type APPLICATIONS Horizontal deflection output for medium resolution display,colorTV High speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 sim
0.10. Size:22K sanken-ele
2sc5333.pdf
2SC5333Silicon NPN Triple Diffused Planar Transistor Application : Series Regulator, Switch, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC5333 Symbol Conditions 2SC5333 UnitUnit 0.24.20.210.1c0.52.8VCBO 300 ICBO VCB=300V 1.0max mAVVCEO 300 IEBO VEB=6V 1.0max mAVVEBO 6 V(B
0.11. Size:1021K kexin
2sc5338.pdf
SMD Type TransistorsNPN Transistors2SC5338SOT-89Unit:mm1.70 0.14 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=12V0.42 0.10.46 0.11.Emitter2.Base3.Emitter4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 12 V Emitter -
0.12. Size:948K kexin
2sc5336.pdf
SMD Type TransistorsNPN Transistors2SC5336SOT-89Unit:mm1.70 0.14 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=12V0.42 0.10.46 0.11.Emitter2.Base3.Emitter4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter -
0.13. Size:1006K kexin
2sc5337.pdf
SMD Type TransistorsNPN Transistors2SC5337SOT-89Unit:mm1.70 0.14 Features Collector Current Capability IC=250mA Collector Emitter Voltage VCEO=15V0.42 0.10.46 0.11.Emitter2.Base3.Emitter4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 15 V Emitter -
0.14. Size:192K inchange semiconductor
2sc5339.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5339DESCRIPTIONHigh Breakdown Voltage-V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal output applications for medium resolutiondisplay &
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