2SC533 Specs and Replacement
Type Designator: 2SC533
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 115 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO92
- BJT ⓘ Cross-Reference Search
2SC533 datasheet
0.1. Size:335K toshiba
2sc5339.pdf 
2SC5339 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5339 HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage V = 5 V (Max.) CE (sat) High Speed t = 0.2 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mo... See More ⇒
0.4. Size:51K nec
2sc5338.pdf
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5338 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES High gain S21e 2 = 10 dB TYP. @ VCE = 5 V, IC = 50 mA, f = 1 GHz Low distortion, low voltage IM2 = -55 dB TYP., IM3 = -76 dB TYP. @ VCE = 5 V, IC = 50 mA, Vin = 105 dB V/75 4-pin power minimold package with improved gain... See More ⇒
0.5. Size:47K nec
2sc5336.pdf
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5336 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES High gain S21e 2 = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz 4-pin power minimold package with improved gain from the 2SC3357 ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5336 25 pcs (Non reel) Magazine ... See More ⇒
0.6. Size:47K nec
2sc5337.pdf
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5337 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES Low distortion IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz 4-pin power minimold package wi... See More ⇒
0.7. Size:43K panasonic
2sc5335 e.pdf
Transistor 2SC5335(Tentative) Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Symbol Ratings Uni... See More ⇒
0.8. Size:38K panasonic
2sc5335.pdf
Transistor 2SC5335(Tentative) Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Symbol Ratings Uni... See More ⇒
0.9. Size:78K jmnic
2sc5339.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5339 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type APPLICATIONS Horizontal deflection output for medium resolution display,colorTV High speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 sim... See More ⇒
0.10. Size:22K sanken-ele
2sc5333.pdf
2SC5333 Silicon NPN Triple Diffused Planar Transistor Application Series Regulator, Switch, and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC5333 Symbol Conditions 2SC5333 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 300 ICBO VCB=300V 1.0max mA V VCEO 300 IEBO VEB=6V 1.0max mA V VEBO 6 V(B... See More ⇒
0.11. Size:1021K kexin
2sc5338.pdf
SMD Type Transistors NPN Transistors 2SC5338 SOT-89 Unit mm 1.70 0.1 4 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=12V 0.42 0.1 0.46 0.1 1.Emitter 2.Base 3.Emitter 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 12 V Emitter - ... See More ⇒
0.12. Size:948K kexin
2sc5336.pdf
SMD Type Transistors NPN Transistors 2SC5336 SOT-89 Unit mm 1.70 0.1 4 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=12V 0.42 0.1 0.46 0.1 1.Emitter 2.Base 3.Emitter 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - ... See More ⇒
0.13. Size:1006K kexin
2sc5337.pdf
SMD Type Transistors NPN Transistors 2SC5337 SOT-89 Unit mm 1.70 0.1 4 Features Collector Current Capability IC=250mA Collector Emitter Voltage VCEO=15V 0.42 0.1 0.46 0.1 1.Emitter 2.Base 3.Emitter 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 15 V Emitter - ... See More ⇒
0.14. Size:192K inchange semiconductor
2sc5339.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5339 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal output applications for medium resolution display &... See More ⇒
Detailed specifications: 2SC529, 2SC529A, 2SC53, 2SC530, 2SC530A, 2SC531, 2SC531A, 2SC532, 2N2222, 2SC5333, 2SC534, 2SC535, 2SC535P, 2SC536, 2SC536KNP, 2SC536NP, 2SC536P
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