2SD1050
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1050
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80
W
Tensión colector-emisor (Vce): 100
V
Corriente del colector DC máxima (Ic): 9
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 10000
Paquete / Cubierta:
MT-200
Búsqueda de reemplazo de transistor bipolar 2SD1050
2SD1050
Datasheet (PDF)
8.2. Size:113K toshiba
2sd1052a.pdf
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8.3. Size:124K rohm
2sd1055 2sd1766.pdf
TransistorsMedium Power Transistor (32V, 2A)2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 /2SD1919 / 2SD1227MFFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = 0.5V (Typ.)(IC / IB = 2A / 0.2A)2) Complements the2SB1188 / 2SB1182 / 2SB1240 /2SB891F / 2SB822 / 2SB1277 /2SB911MFStructureEpitaxial planar typeNPN silicon transistor(96-217-B24)2562SD1766 /
8.4. Size:44K panasonic
2sd1051 e.pdf
Transistor2SD1051Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mmComplementary to 2SB8196.9 0.1 2.5 0.11.51.5 R0.9 1.0R0.9FeaturesHigh collector to emitter voltage VCEO.Large collector power dissipation PC.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.5
8.5. Size:40K panasonic
2sd1051.pdf
Transistor2SD1051Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mmComplementary to 2SB8196.9 0.1 2.5 0.11.51.5 R0.9 1.0R0.9FeaturesHigh collector to emitter voltage VCEO.Large collector power dissipation PC.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.5
Otros transistores... 2SA1179M4
, 2SA1179M5
, 2SA1179M6
, 2SA1179M7
, 2SA118
, 2SA1180
, 2SA1180A
, 2SA1182
, BD777
, 2SA1182Y
, 2SA1183
, 2SA1184
, 2SA1185
, 2SA1186
, 2SA1186O
, 2SA1186P
, 2SA1186Y
.