2SD1050 PDF Specs and Replacements, Transistor Equivalent Finder, Cross Reference

2SD1050 PDF Specs and Replacement

   Type Designator: 2SD1050
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings

   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Collector Current |Ic max|: 9 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

   Forward Current Transfer Ratio (hFE), MIN: 10000
   Noise Figure, dB: -
   Package: MT-200

2SD1050 Substitution

- BJT ⓘ Cross-Reference Search

2SD1050 PDF detailed specifications

8.1. Size:505K 1
2sd1766 2sd1758 2sd1862 2sd1189f 2sd1055 2sd1919 2sd1227m.pdf pdf_icon

... See More ⇒

8.2. Size:113K toshiba
2sd1052a.pdf pdf_icon

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒

8.3. Size:124K rohm
2sd1055 2sd1766.pdf pdf_icon

Transistors Medium Power Transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M FStructure Epitaxial planar type NPN silicon transistor (96-217-B24) 256 2SD1766 / ... See More ⇒

8.4. Size:44K panasonic
2sd1051 e.pdf pdf_icon

Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm Complementary to 2SB819 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High collector to emitter voltage VCEO. Large collector power dissipation PC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.5... See More ⇒