2SD1060Q Todos los transistores

 

2SD1060Q . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD1060Q
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 30 MHz
   Capacitancia de salida (Cc): 100 pF
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

2SD1060Q Datasheet (PDF)

 ..1. Size:174K  cn sptech
2sd1060q 2sd1060r 2sd1060s.pdf pdf_icon

2SD1060Q

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD1060DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V(Max) @I = 3.0ACE(sat) CComplement to Type 2SB824APPLICATIONSDesigned for relay drivers, high-speed inverters, converters,and other general large-current switching application

 7.1. Size:55K  sanyo
2sd1060.pdf pdf_icon

2SD1060Q

Ordering number : EN686J2SB824 / 2SD1060SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SB824 / 2SD106050V / 5A Switching ApplicationsApplications Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching.Features Low collector-to-emitter saturation voltage : VCE(sat)= (--)0.4V max / IC= (--)3A,

 7.2. Size:192K  onsemi
2sd1060.pdf pdf_icon

2SD1060Q

Ordering number : EN686K2SD1060Bipolar Transistorhttp://onsemi.com( )50V, 5A, Low VCE sat NPN TO-220-3LApplications Suitable for relay drivers, high-speed inverters, converters, and other general large-current switchingFeatures Low collector-to-emitter saturation voltage : VCE(sat)=0.3V max / IC=3A, IB= 0.3ASpecificationsAbsolute Maximum Ratings at Ta=25CParamete

 7.3. Size:265K  utc
2sd1060.pdf pdf_icon

2SD1060Q

UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR FEATURES * Low collector-to-emitter saturation voltage: VCE(SAT)=0.4V max/IC=3A, IB=0.3A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD1060L-x-AB3-R 2SD1060G-x-AB3-R SOT-89 B C E Tape Reel2SD1060L-x-T60-K 2SD1060G-x-T6

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 3DG1740S | NKT108 | 2N5862 | DTC123JEB | 2SB443A | KRC663U | 2SC765

 

 
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