2SD1060Q Todos los transistores

 ..1. Size:174K  cn sptech
 2sd1060q 2sd1060r 2sd1060s.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD1060 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.4V(Max) @I = 3.0A CE(sat) C Complement to Type 2SB824 APPLICATIONS Designed for relay drivers, high-speed inverters, converters, and other general large-current switching application

 7.1. Size:55K  sanyo
 2sd1060.pdf

Ordering number EN686J 2SB824 / 2SD1060 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB824 / 2SD1060 50V / 5A Switching Applications Applications Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching. Features Low collector-to-emitter saturation voltage VCE(sat)= (--)0.4V max / IC= (--)3A,

 7.2. Size:192K  onsemi
 2sd1060.pdf

Ordering number EN686K 2SD1060 Bipolar Transistor http //onsemi.com ( ) 50V, 5A, Low VCE sat NPN TO-220-3L Applications Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching Features Low collector-to-emitter saturation voltage VCE(sat)=0.3V max / IC=3A, IB= 0.3A Specifications Absolute Maximum Ratings at Ta=25 C Paramete

 7.3. Size:265K  utc
 2sd1060.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR FEATURES * Low collector-to-emitter saturation voltage VCE(SAT)=0.4V max/IC=3A, IB=0.3A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD1060L-x-AB3-R 2SD1060G-x-AB3-R SOT-89 B C E Tape Reel 2SD1060L-x-T60-K 2SD1060G-x-T6

 7.4. Size:128K  jmnic
 2sd1060.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1060 DESCRIPTION With TO-220 package Low collector-emitter saturation voltage Complement to type 2SB824 APPLICATIONS Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 m

 7.5. Size:214K  inchange semiconductor
 2sd1060.pdf

isc Silicon NPN Power Transistor 2SD1060 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.4V(Max) @I = 3.0A CE(sat) C Complement to Type 2SB824 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters, converters,